INFINEON Q62702-L90

CLY 5
GaAs FET
________________________________________________________________________________________________________
Datasheet
* Power amplifier for mobile phones
* For frequencies from 400 MHz to 2.5 GHz
* Wide operating voltage range: 2.7 to 6 V
* POUT at VD=3V, f=1.8GHz typ. 26.5 dBm
* High efficiency better 55 %
ESD:
Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
CLY 5
CLY 5
Ordering code
(taped)
1
Q62702-L90
G
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature
Pulse peak power
Total power dissipation (Ts < 80 °C)
Pin Configuration
2
3
4
S
D
S
Package 1)
SOT 223
Symbol
Values
Unit
VDS
VDG
9
V
12
V
-6
V
1.2
A
150
°C
-55...+150
°C
PPulse
Ptot
9
W
2
W
RthChS
≤35
K/W
VGS
ID
TCh
Tstg
Ts: Temperature at soldering point
Thermal Resistance
Channel-soldering point
1) Dimensions see chapter Package Outlines
Siemens Aktiengesellschaft
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17.12.96
HL EH PD21
CLY 5
GaAs FET
________________________________________________________________________________________________________
Electrical characteristics (TA = 25°C , unless otherwise specified)
Characteristics
Drain-source saturation current
VDS = 3 V
VDS = 3 V ID = 350 mA
Pin = 0 dBm
IDSS
600
800
1200
mA
ID
-
10
100
µA
IG
-
5
20
µA
VGS(p)
-3.8
-2.8
-1.8
V
G
10.5
11.0
-
dB
G
11.5
12.0
-
dB
Gp
9.0
9.5
-
dB
Po
26.5
27
-
dBm
Po
29.5
30
-
dBm
P1dB
-
26.5
-
dBm
P1dB
-
30
-
dBm
PAE
40
55
-
%
f = 1.8 GHz
Small Signal Gain*)
VDS = 5 V ID = 350 mA
Pin = 0 dBm
f = 1.8 GHz
Small Signal Gain **)
VDS = 3 V ID = 350 mA
Pin = 0 dBm
f = 1.8 GHz
Output Power
VDS = 3 V ID = 350 mA
Pin = 19 dBm
f = 1.8 GHz
Output Power
VDS = 5 V ID = 350 mA
Pin = 21 dBm
f = 1.8 GHz
1dB-Compression Point
ID = 350 mA
f = 1.8 GHz
1dB-Compression Point
VDS = 5 V
Unit
ID=100µA
Small Signal Gain*)
VDS = 3 V
max
VGS = -3.8 V
Pinch-off Voltage
VDS= 3 V
typ
VGS = -3.8 V
Gate pinch-off current
VDS = 3 V
min
VGS = 0 V
Drain-source pinch-off current
VDS = 3 V
Symbol
ID = 350 mA
f = 1.8GHz
Power Added Efficiency
VDS = 5 V ID = 350 mA
Pin = 21 dBm
f = 1.8 GHz
*) Matching conditions for maximum small signal gain (not identical with power matching conditions!)
**) Power matching conditions: f=1.8GHz:
Source Match: Γms : MAG 0.58; ANG -143°; Load Match: Γml : MAG 0.76; ANG -116°
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17.12.96
HL EH PD21
CLY 5
GaAs FET
________________________________________________________________________________________________________
Compression Power vs. Drain-Source Voltage
f = 1.8GHz; IDS=0.5IDSS
P1dB
ηD
Gain
P1dB
40
[dBm]
35
80
[%]
70
16
[dB]
14
2.0
[W]
1.75
30
60
12
1.5
25
50
10
1.25
20
40
8
1.0
15
30
6
0.75
10
20
4
0.5
5
10
2
0.25
0
0
0
0
1
2
3
4
5
6
7[V] 8
0
0
1
Drain-Source Voltage
2
3
4
5
6
7[V] 8
Drain-Source Voltage
Output Characteristics
PtotDC
0,9
VGS = 0V
0,7
VGS = -0.5V
0,5
VGS = -1V
0,3
0,1
0
VGS = -1.5V
VGS = -2V
0
1
2
3
4
5
6
Drain-Source Voltage [V]
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17.12.96
HL EH PD21
CLY 5
GaAs FET
________________________________________________________________________________________________________
typ. Common Source S-Parameters
VDS = 3 V
ID = 350 mA
Zo = 50 Ω
f
GHz
S11
MAG
0,1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.2
1.4
1.5
1.6
1.8
2
2.2
2.4
2.5
3
3.5
4
4.5
5
5.5
6
0,98
0.96
0.93
0.9
0.87
0.81
0.77
0.73
0.71
0.7
0.69
0.68
0.69
0.7
0.71
0.72
0.74
0.76
0.78
0.8
0.81
0.85
0.87
0.89
0.9
0.92
0.92
0.92
ANG
S21
MAG
-26,6
-39.4
-51.5
-63.1
-73.8
-93.3
-110.3
-125.3
-138.5
-150.4
-161.1
-170.8
172.1
157.3
150.5
144.1
132.2
121.4
111.5
102.5
98
79.2
64
51.4
39.8
29
18.4
8.3
11.52
11.15
10.6
10.06
9.49
8.34
7.33
6.47
5.75
5.14
4.64
4.2
3.51
2.98
2.76
2.56
2.22
1.94
1.7
1.49
1.39
1.01
0.75
0.59
0.48
0.41
0.35
0.31
Siemens Aktiengesellschaft
ANG
S12
MAG
160.7
151.4
142.8
134.9
127.4
114.1
102.5
92.4
83.5
75.2
67.6
60.5
47.2
35.1
29.2
23.6
12.6
2.1
-7.9
-17.4
-21.9
-42.1
-58.1
-70.6
-82.2
-93.1
-103.4
-112.4
0.01024
0.015
0.01942
0.02323
0.02665
0.03245
0.03711
0.04138
0.04528
0.0489
0.05271
0.05646
0.06393
0.07181
0.07569
0.07941
0.08684
0.09377
0.0998
0.10532
0.1076
0.11638
0.12148
0.12571
0.12914
0.13429
0.13892
0.14142
pg. 4/8
ANG
S22
MAG
ANG
79
74.3
69.9
66.1
62.3
57
52.8
49.7
47.3
45.2
43.3
41.6
38
34
32
29.7
24.8
19.7
14.6
9.4
6.7
-6
-17.2
-27.3
-37.2
-47
-57
-66.8
0.3
0.31
0.33
0.36
0.38
0.4
0.43
0.45
0.47
0.49
0.5
0.51
0.54
0.57
0.58
0.59
0.62
0.65
0.68
0.7
0.71
0.76
0.8
0.84
0.86
0.88
0.9
0.91
-171.8
-169.3
-169.2
-169.4
-169.4
-172.7
-175.6
-179.4
177.5
174.2
170.8
168.1
161.8
155.6
152.9
149.4
143.2
137
130.9
124.7
121.1
105.6
91.4
78.2
65.6
53.1
40.3
27
17.12.96
HL EH PD21
CLY 5
GaAs FET
________________________________________________________________________________________________________
typ. Common Source S-Parameters
VDS = 5 V
ID = 350 mA
Zo = 50 Ω
f
GHz
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.2
1.4
1.5
1.6
1.8
2
2.2
2.4
2.5
3
3.5
4
4.5
5
5.5
6
S11
MAG
0.98
0.95
0.92
0.89
0.86
0.8
0.76
0.72
0.7
0.69
0.68
0.68
0.68
0.7
0.71
0.72
0.75
0.77
0.8
0.82
0.83
0.87
0.89
0.91
0.92
0.93
0.93
0.93
ANG
-26.3
-38.8
-50.8
-62.1
-72.6
-91.7
-108.3
-122.9
-135.9
-147.6
-158.1
-167.7
175.3
160.4
153.6
147.1
135
123.9
113.7
104.3
99.7
80.1
64.4
51.5
39.6
28.8
18.1
8
S21
MAG
13.02
12.58
11.98
11.34
10.68
9.39
8.24
7.27
6.45
5.77
5.2
4.7
3.92
3.31
3.06
2.83
2.43
2.1
1.82
1.58
1.47
1.02
0.74
0.56
0.45
0.37
0.31
0.27
ANG
160.1
150.7
141.9
133.7
126.1
112.4
100.6
90.2
80.9
72.4
64.5
57
43
30.1
24
17.9
6.2
-5
-15.6
-25.7
-30.4
-51.4
-67.4
-79.4
-90.2
-100
-109.2
-117.1
S12
MAG
0.00906
0.01326
0.01702
0.02026
0.02304
0.02771
0.03151
0.0348
0.03798
0.04099
0.04435
0.04784
0.05543
0.06413
0.06865
0.07318
0.08237
0.09121
0.09917
0.10617
0.10916
0.12055
0.12631
0.13053
0.13384
0.13894
0.1434
0.14538
ANG
79.1
73.7
69.3
65.6
61.8
57
53.4
51.2
49.7
48.8
47.9
47.1
45.2
42.2
40.6
38.5
33.7
28.3
22.5
16.7
13.6
-0.8
-13.4
-24.5
-35
-45.2
-55.5
-65.6
S22
MAG
0.15
0.17
0.2
0.23
0.26
0.29
0.33
0.35
0.37
0.4
0.41
0.44
0.47
0.51
0.54
0.55
0.6
0.64
0.67
0.7
0.72
0.78
0.83
0.86
0.88
0.91
0.92
0.92
ANG
-153.9
-148.4
-148.5
-149.9
-150.6
-155.5
-159.4
-164.1
-167.6
-171.3
-174.9
-177.8
175.4
168.7
165.5
161.7
154.6
147.5
140.4
133.3
129.1
111.6
95.8
81.3
67.9
54.9
41.7
28
Additional S-Parameter available on CD
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17.12.96
HL EH PD21
CLY 5
GaAs FET
________________________________________________________________________________________________________
Total Power Dissipation
Ptot = f(Ts)
Ptot
3.2
[W]
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
50
100
O
C
Ts
150
Permissible Pulse Load
Ptotmax/PtotDC = f(tp)
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17.12.96
HL EH PD21
CLY 5
GaAs FET
________________________________________________________________________________________________________
CLY5 Power GaAs-FET Matching Conditions
Definition:
Γ
Γ
Measured Data:
Typ
f
[GHz]
VDS
[V]
ID
[mA]
P-1dB
[dBm]
Gain
[dB]
Γms
MAG
Γms
ANG
Γml
MAG
Γml
ANG
CLY5
0.9
3
5
6
3
5
6
3
5
6
3
5
6
350
350
350
350
350
350
350
350
350
350
350
350
25.8
29.2
29.8
26.5
30.0
30.6
26.5
30.0
30.5
25.0
29.1
30.5
15.6
16.3
17.2
11.0
11.5
12.6
9.5
10.0
10.0
8.4
8.7
8.9
0.50
0.52
0.58
0.63
0.59
0.64
0.58
0.56
0.58
0.62
0.60
0.65
133
144
143
-167
-164
-165
-143
-140
-133
-108
-109
-112
0.70
0.61
0.54
0.74
0.69
0.55
0.76
0.71
0.69
0.68
0.66
0.68
-154
-156
-168
-126
-126
-132
-116
-118
-119
-105
-105
-106
1.5
1.8
2.4
Note: Gain is small signal gain @ Γms and Γml
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17.12.96
HL EH PD21
CLY 5
GaAs FET
________________________________________________________________________________________________________
Increased Power Handling Capability Pulsed Applications
GSM/PCN TDMA-Frame:
tp
D =
4,615ms
=
T
0.577 ms
= 0125
.
4.615ms
577µs
Take value
Ptot max
from diagram permissible pulse load
Ptot DC
-->
Ptot max
Ptot DC
≈ 1.4
Ptot = 2W × 1.4 = 2.8W
DECT TDMA-Frame:
10ms
D =
tp
T
=
10ms
4.615ms
= 0.0417
417µs
Take value
Ptot max
Ptot DC
from diagram permissible pulse load -->
Ptot max
Ptot DC
≈ 1.5
Ptot = 2W × 1.5 = 3W
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17.12.96
HL EH PD21