INTEGRATED CIRCUITS DATA SHEET TDA1001B TDA1001BT Interference and noise suppression circuit for FM receivers Product specification File under Integrated Circuits, IC01 December 1982 Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers TDA1001B TDA1001BT GENERAL DESCRIPTION The TDA1001B is a monolithic integrated circuit for suppressing interference and noise in FM mono and stereo receivers. Features • Active low-pass and high-pass filters • Interference pulse detector with adjustable and controllable response sensitivity • Noise detector designed for FM i.f. amplifiers with ratio detectors or quadrature detectors • Schmitt trigger for generating an interference suppression pulse • Active pilot tone generation (19 kHz) • Internal voltage stabilization QUICK REFERENCE DATA Supply voltage (pin 9) VP typ. 12 V Supply current (pin 9) IP typ. 14 mA Vi(p-p) typ. 1 V Input resistance (pin 1) Ri min. 35 kΩ Voltage gain (V1-16/V6-16) Gv typ. 0,5 dB Total harmonic distortion THD typ. 0,25 % Bandwidth B typ. 70 kHz Vi(tr)OM typ. 19 mV Suppression pulse duration ts typ. 27 µs Supply voltage range (pin 9) VP 7,5 to 16 V Operating ambient temperature range Tamb −30 to + 80 °C A.F. input signal handling (pin 1) (peak-to-peak value) Suppression pulse threshold voltage (peak value); R13 = 0 PACKAGE OUTLINE TDA1001B: 16-lead DIL; plastic (SOT38); SOT38-1; 1996 September 06. TDA1001BT: 16-lead mini-pack; plastic (SO16; SOT109A); SOT116-1; 1996 September 06. December 1982 2 Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers Fig.1 Block diagram. December 1982 3 TDA1001B TDA1001BT Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers TDA1001B TDA1001BT RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Supply voltage (pin 9) VP max. 18 V Input voltage (pin 1) V1-16 max. VP V Output current (pin 6) I6 max. 1 mA −I6 max. 15 mA Total power dissipation see derating curves Fig.2 Storage temperature range Tstg −65 to +150 °C Operating ambient temperature range Tamb −30 to +80 °C in plastic DIL (SOT-38) package (TDA1001B). − − − − − − in plastic mini-pack (SO-16; SOT-109A) package (TDA1001BT); mounted on a ceramic substrate of 50 × 15 × 0,7 mm. Fig.2 Power derating curves. December 1982 4 Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers TDA1001B TDA1001BT CHARACTERISTICS VP = 12 V; Tamb = 25 °C; measured in Fig.4; unless otherwise specified PARAMETER SYMBOL MIN. TYP. MAX. UNIT Input stage Input impedance (pin 1) f = 40 kHz Zi1 − 45 − kΩ Ri1 − 600 − kΩ Ii1 − 6 15 µA Input resistance (pin 1) with pin 2 not connected Input bias current (pin 1) V1-16 = 4,8 V Output resistance (pin 2) unloaded low-ohmic Ro2 R2-16 − 5,6 − kΩ Input resistance (pin 3) Ri3 10 − − MΩ Input bias current (pin 3) Ii3 − − 7 µA Output resistance (pin 4) Ro4 − − 5 Ω Voltage gain (V4/V3) Gv4/3 − 1,1 − Iio5 − 50 200 nA Internal emitter resistance Low-pass amplifier Suppression pulse stage Input offset current at pin 5 during the suppression time tS Output stage Output resistance (pin 6) Ro6 Internal emitter resistance R6-16 − 6 − kΩ Current gain (I5/I6) Gi5/6 − 85 − dB Zi8 − − 1 Ω Zo7 150 − − kΩ Output bias current (pin 7) Io7 0,7 1 1,3 mA Current gain (I7/I8) Gi7/8 − 3 − Input resistance (pin 15) Ri15 10 − − MΩ Input bias current (pin 15) Ii15 − − 7 µA Output resistance (pin 14) Ro14 − − 5 Ω Voltage gain (V14/15) Gv14/15 − 1,4 − low-ohmic Pilot tone generation (19 kHz) Input impedance (pin 8) Output impedance (pin 7) pin 8 open High-pass amplifier December 1982 5 Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers PARAMETER TDA1001B TDA1001BT SYMBOL MIN. TYP. MAX. UNIT A.G.C. amplifier; interference and noise detectors R13-14 1,5 2,0 2,5 kΩ of the interference pulse detector ± V14int m − 15 − mV of the noise detector ± V14n m − 6,5 − mV V11-16M 5,2 5,8 6,4 V I12M 150 200 250 µA Output bias current (pin 12) Io12 − 2,5 6 µA Input threshold voltage for onset of control (pin 12) V12-9 360 425 500 mV or: − 0,66VBE − mV 1: gate disabled V11-16 − 3,2 − V 2: gate enabled V11-16 − 2,0 − V Switching hysteresis ∆V11-16 − 1,2 − V Input offset current (pin 11) Iio11 − − 100 nA gate disabled; peak value Io10M 0,6 1 1,4 mA Reverse output current (pin 10) IR10 − − 2 µA Sensitivity (pin 10) V10-16 2,5 − − V Internal resistance (pins 13 and 14) Operational threshold voltage (uncontrolled); peak value (pin 14) Output voltage (peak value; pin 11) Output control current (pin 12) (peak value) (Vi(tr)O+ 3 dB) Suppression pulse generation (Schmitt trigger) Switching threshold (pin 11) Output current (pin 10) December 1982 6 Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers TDA1001B TDA1001BT APPLICATION INFORMATION VP = 12 V; Tamb = 25 °C; f = 1 kHz; measured in Fig.4; unless otherwise specified PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply voltage range (pin 9) VP 7,5 12 16 V Quiescent supply current (pin 9) IP 10 14 18 mA V1-16 − 4,5 − V Signal path D.C. input voltage (pin 1) Input impedance (pin 1); f = 40 kHz |Zi1| 35 − − kΩ D.C. output voltage (pin 6) V6-16 2,4 2,8 − V Output resistance (pin 6) Ro6 low-ohmic Voltage gain (V6/V1) Gv6/1 0 0,5 1 dB −3 dB point of low-pass filter f(−3dB) − 70 − kHz Vi(p-p) 1,2 1,8 − V V6-16(p-p) − − 3 mV αint 20 30 − dB at R13 = 0 Ω Vi(tr)rms 8 11 14 mV at R13 = 2,7 kΩ Vi(tr)rms 18 28,5 40 mV ∆Vi(rms) − 1 − mV at R13 = 0 Ω Vi(tr)M − 19 − mV at R13 = 2,7 kΩ Vi(tr)M − 45 − mV tS 24 27 30 µs Sensitivity for THD < 0,5% (peak-to-peak value) Residual interference pulse after suppression (see Fig.3); pin 7 to ground; Vi(tr)M = 100mV; (peak-to-peak value) Interference suppression at R13 = 0; notes 5 and 6; Vi(rms) = 30 mV; f = 19 kHz (sinewave); Vi(tr)M = 60 mV; fr = 400 Hz Interference processing Input signal at pin 1; output signal at pin 10 Suppression pulse threshold voltage; control function OFF (pin 9 connected to pin 12); r.m.s. value; note 1 measured with sinewave input signal f = 120 kHz; −V10-9 > 1 V voltage difference for safe triggering/ non-triggering (r.m.s. value) measured with interference pulses f = 400 Hz (see Fig.3); peak value Suppression pulse duration (note 2) December 1982 7 Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers PARAMETER TDA1001B TDA1001BT SYMBOL MIN. TYP. MAX. UNIT Noise threshold feedback control (notes 1 and 3) Noise input voltage (r.m.s. value) f = 120 kHz sinewave for V12-9 = 300 mV at R13 = 0 Ω Vni(rms) 2,3 3,3 4,3 mV at R13 = 2,7 kΩ Vni(rms) − 8,2 − mV at R13 = 0 Ω Vni(rms) − 7,3 − mV at R13 = 2,7 kΩ Vni(rms) − 16,5 − mV at R13 = 0 Ω Vni(rms) 33 45 57 mV at R13 = 2,7 kΩ Vni(rms) − 107 − mV at repetition frequency fr = 1 kHz Vo6(rms) 49 − 56 mV at repetition frequency fr = 16 kHz Vo6(rms) 45 − 65 mV for V12-9 = 425 mV (Vi(tr)O + 3 dB) for V12-9 = 560 mV (Vi(tr)O + 20 dB) Amplification control voltage by interference intensity (note 4) Vi(rms) = 50 mV; f = 19 kHz; Vi(tr)M = 300 mV; r.m.s. value Notes to application information 1. The interference suppression and noise feedback control thresholds can be determined by R13 or a capacitive voltage divider at the input of the high-pass filter and they are defined by the following formulae: Vi(tr) = (1 + R13/RS) × Vi(tr)O in which RS = 2 kΩ; Vni = (1 + R13/RS) × VniO in which RS = 2 kΩ. 2. The suppression pulse duration is determined by C11 = 2,2 nF and R11 = 6,8 kΩ. 3. The characteristic of the noise feedback control is determined by R12 (and R10). 4. The feedback control of the interference suppression threshold at higher repetition frequencies is determined by R10 (and R12). 5. The 19 kHz generator can be adjusted with R7-16 (and R7-8). Adjustment is not required if components with small tolerances are used e.g. ∆R < 1% and ∆C < 2%. 6. Measuring conditions: The peak output noise voltage (Vno m, CCITT filter) shall be measured at the output with a de-emphazing time T = 50 µs (R = 5 kΩ, C = 10 nF); the reference value of 0 dB is Vo int with the 19 kHz generator short-circuited (pin 7 grounded). December 1982 8 Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers Fig.3 TDA1001B TDA1001BT Measuring signal for interference suppression; at the input (pin 1) a square-wave is applied with a duration of ttr = 10 µs and with rise and fall times tr = tf = 10 ns. Fig.4 Application circuit diagram. December 1982 9 Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers TDA1001B TDA1001BT PACKAGE OUTLINES DIP16: plastic dual in-line package; 16 leads (300 mil); long body SOT38-1 ME seating plane D A2 A A1 L c e Z b1 w M (e 1) b MH 9 16 pin 1 index E 1 8 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.7 0.51 3.7 1.40 1.14 0.53 0.38 0.32 0.23 21.8 21.4 6.48 6.20 2.54 7.62 3.9 3.4 8.25 7.80 9.5 8.3 0.254 2.2 inches 0.19 0.020 0.15 0.055 0.045 0.021 0.015 0.013 0.009 0.86 0.84 0.26 0.24 0.10 0.30 0.15 0.13 0.32 0.31 0.37 0.33 0.01 0.087 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT38-1 050G09 MO-001AE December 1982 EIAJ EUROPEAN PROJECTION ISSUE DATE 92-10-02 95-01-19 10 Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers TDA1001B TDA1001BT SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 D E A X c y HE v M A Z 16 9 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 8 e 0 detail X w M bp 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 10.0 9.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0098 0.39 0.014 0.0075 0.38 0.050 0.24 0.23 0.041 0.039 0.016 0.028 0.020 inches 0.0098 0.057 0.069 0.0039 0.049 0.16 0.15 0.01 0.01 0.028 0.004 0.012 θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT109-1 076E07S MS-012AC December 1982 EIAJ EUROPEAN PROJECTION ISSUE DATE 91-08-13 95-01-23 11 o 8 0o Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. WAVE SOLDERING This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. DIP SOLDERING BY DIPPING OR BY WAVE • The longitudinal axis of the package footprint must be parallel to the solder flow. The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. • The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. REPAIRING SOLDERED JOINTS A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. December 1982 TDA1001B TDA1001BT 12 Philips Semiconductors Product specification Interference and noise suppression circuit for FM receivers TDA1001B TDA1001BT DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1982 13