ROHM RF2001T2D

Data Sheet
Fast recovery diode
RF2001T2D
Applications
General rectification
Dimensions (Unit : mm)
 Structure
4.5±0.3
0.1
2.8±0.2
0.1
10.0±0.3
0.1
5.0±0.2
①
13.5MIN
1.2
Construction
Silicon epitaxial planar
15.0±0.4
0.2
8.0
(1) (2) (3)
8.0±0.2
12.0±0.2
Features
1) Cathode common type.
(TO-220)
2) Ultra Low V F
3) Very fast recovery
4) Low switching loss
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : TO220FN
①
Manufacture Date
Absoslute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Reverse voltage (repetitive peak)
200
VRM
Reverse voltage (DC)
200
VR
Average rectified forward current (*1)
20
Io
Forward current surge peak (60Hz/1cyc)
100
IFSM
Junction temperature
150
Tj
Storage temoerature
55 to 150
Tstg
(*1)Business frequencies, Rating of R-load, Tc=113C. 1/2 Io per diode
Electrical characteristic (Ta=25C)
Parameter
Unit
V
V
A
A
C
C
Forward voltage
Symbol
VF
Min.
-
Typ.
0.87
Max.
0.93
Unit
V
Reverse current
IR
-
0.01
10
μA
Reverse recovery time
trr
-
20
30
ns
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Conditions
IF=10A
VR=200V
IF=0.5A,IR=1A,Irr=0.25*I R
2011.05 - Rev.D
Data Sheet
RF2001T2D
Electrical characteristics curves
10
Ta=150C
10000
Ta=125C
Ta=25C
Ta=75C
0.1
f=1MHz
Ta=-25C
0.01
1000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
1000
Ta=125C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F(A)
Ta=150C
Ta=75C
100
Ta=25C
10
Ta=-25C
1
100
10
0.001
100 200 300 400 500 600 700 800 900 100
0
1
0.1
0
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
860
850
80
AVE:867.0mV
70
60
50
40
30
AVE:10.1nA
VF DISPERSION MAP
100
AVE:237.0A
350
AVE:352.9pF
340
1000
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
Ifsm
15
10
5
AVE:20.2ns
8.3ms
10
1
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
100
Ifsm
t
100
10
10
10
trr DISPERSION MAP
1000
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
40
35
IF=10A
30
1ms
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
IM=100mA
10
8.3ms
1cyc
100
1
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I FSM(A)
360
0
0
1
370
Ct DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I FSM(A)
150
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
1cyc
8.3ms
200
380
IR DISPERSION MAP
30
250
Ta=25C
f=1MHz
VR=0V
n=10pcs
320
0
Ifsm
30
330
10
300
25
390
20
840
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
400
Ta=25C
VR=300V
n=30pcs
90
870
50
0
300
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
880
100
150
200
250
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
100
Ta=25C
IF=10A
n=30pcs
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:V F(mV)
890
50
time
Rth(j-a)
FORWARD POWER
DISSIPATION:Pf(W)
0
300us
Rth(j-c)
1
DC
25
D=1/2
20
Sin(=180)
15
10
5
0.1
0.001
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
5
10
15
20
25
30
35
40
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2011.05 - Rev.D
40
30
40
0V
VR
t
D=1/2
25
T
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
DC
30
D=t/T
VR=100V
Tj=150C
20
15
Sin(=180)
10
5
No break at 30kV
DC
35
30
D=1/2
Sin(=180)
25
20
15
10
0A
Io
0V
VR
t
5
0
T
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
0
25
No break at 30kV
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
Io
0A
35
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Data Sheet
RF2001T2D
50
D=t/T
VR=100V
Tj=150C
75
20
15
10
5
0
100
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
125
150
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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2011.05 - Rev.D
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Notes
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R1120A