PHILIPS BF1100

BF1100; BF1100R
Dual-gate MOS-FETs
Rev. 02 — 13 November 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
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- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
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depending on the version)
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NXP Semiconductors
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
FEATURES
• Specially designed for use at 9 to 12 V supply voltage
and substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
CAUTION
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
APPLICATIONS
• VHF and UHF applications such as television tuners and
professional communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistor consists of an amplifier MOS-FET with source
4
PIN
SYMBOL
1
s, b
2
d
drain
3
g2
gate 2
4
g1
gate 1
DESCRIPTION
source
handbook, halfpage
3
3
1
Top view
PINNING
d
d
handbook, halfpage
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
4
g2
g2
g1
g1
2
2
s,b
MAM124
BF1100 marking code: %MY.
1
Top view
s,b
MAM125 - 1
BF1100R marking code: %MZ.
Fig.1 Simplified outline (SOT143) and symbol.
Fig.2 Simplified outline (SOT143R) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
−
−
14
V
ID
drain current
−
−
30
mA
Ptot
total power dissipation
−
−
200
mW
Tj
operating junction temperature
−
−
150
°C
yfs
forward transfer admittance
24
28
33
mS
Cig1-s
input capacitance at gate 1
−
2.2
2.6
pF
Crs
reverse transfer capacitance
f = 1 MHz
−
25
35
fF
F
noise figure
f = 800 MHz
−
2
−
dB
Rev. 02 - 13 November 2007
2 of 15
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
14
V
ID
drain current
−
30
mA
IG1
gate 1 current
−
±10
mA
IG2
gate 2 current
−
±10
mA
Ptot
total power dissipation
see Fig.3
BF1100
up to Tamb = 50 °C; note 1
−
200
mW
BF1100R
up to Tamb = 40 °C; note 1
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
+150
°C
Note
1. Device mounted on a printed-circuit board.
MLD155
250
handbook, halfpage
Ptot
(mW)
200
MLD156
40
Y fs
(mS)
30
150
20
BF1100R
BF1100
100
10
50
0
0
0
50
100
50
150
200
Tamb ( oC)
Fig.4
Fig.3 Power derating curves.
Rev. 02 - 13 November 2007
0
50
100
150
T j ( oC)
Forward transfer admittance as a function
of junction temperature; typical values.
3 of 15
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
BF1100
500
K/W
BF1100R
550
K/W
thermal resistance from junction to ambient
note 1
thermal resistance from junction to soldering point
note 2
BF1100
Ts = 92 °C
290
K/W
BF1100R
Ts = 78 °C
360
K/W
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)G1-SS
gate 1-source breakdown voltage
VG2-S = VDS = 0; IG1-S = 1 mA
13.2
20
V
V(BR)G2-SS
gate 2-source breakdown voltage
VG1-S = VDS = 0; IG2-S = 1 mA
13.2
20
V
V(F)S-G1
forward source-gate 1 voltage
VG2-S = VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate 2 voltage
VG1-S = VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate 1-source threshold voltage
VG2-S = 4 V; VDS = 9 V;
ID = 20 µA
0.3
1
V
VG2-S = 4 V; VDS = 12 V;
ID = 20 µA
0.3
1
V
VG1-S = 4 V; VDS = 9 V;
ID = 20 µA
0.3
1.2
V
VG1-S = 4 V; VDS = 12 V;
ID = 20 µA
0.3
1.2
V
VG2-S = 4 V; VDS = 9 V;
RG1 = 180 kΩ; note 1
8
13
mA
VG2-S = 4 V; VDS = 12 V;
RG1 = 250 kΩ; note 2
8
13
mA
VG2-S(th)
IDSX
gate 2-source threshold voltage
drain-source current
IG1-SS
gate 1 cut-off current
VG2-S = VDS = 0; VG1-S = 12 V
−
50
nA
IG2-SS
gate 2 cut-off current
VG1-S = VDS = 0; VG2-S = 12 V
−
50
nA
Notes
1. RG1 connects gate 1 to VGG = 9 V; see Fig.27.
2. RG1 connects gate 1 to VGG = 12 V; see Fig.27.
Rev. 02 - 13 November 2007
4 of 15
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; ID = 10 mA; unless otherwise specified.
SYMBOL
PARAMETER
yfs
CONDITIONS
forward transfer admittance
input capacitance at gate 1
Cig1-s
input capacitance at gate 2
Cig2-s
drain-source capacitance
Cos
MIN.
TYP.
MAX.
UNIT
pulsed; Tj = 25 °C
VDS = 9 V
24
28
33
mS
VDS = 12 V
24
28
33
mS
VDS = 9 V
−
2.2
2.6
pF
VDS = 12 V
−
2.2
2.6
pF
VDS = 9 V
−
1.6
−
pF
VDS = 12 V
−
1.4
−
pF
VDS = 9 V
−
1.4
1.8
pF
VDS = 12 V
−
1.1
1.5
pF
VDS = 9 V
−
25
35
fF
VDS = 12 V
−
25
35
fF
VDS = 9 V
−
2
2.8
dB
VDS = 12 V
−
2
2.8
dB
f = 1 MHz
f = 1 MHz
f = 1 MHz
reverse transfer capacitance f = 1 MHz
Crs
F
f = 800 MHz; GS = GSopt; BS = BSopt
noise figure
MLD157
0
MLD158
120
handbook, halfpage
handbook,
gain halfpage
Vunw
(dBµV)
reduction
(dB)
10
(1)
110
(2)
20
100
30
90
40
80
50
0
1
2
3
4
0
10
20
30
VAGC (V)
40
50
gain reduction (dB)
(1) RG = 250 kΩ to VGG = 12 V
(2) RG = 180 kΩ to VGG = 9 V
fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C.
f = 50 MHz.
Tj = 25 °C.
Fig.6
Fig.5
Gain reduction as a function of the AGC
voltage; typical values.
Rev. 02 - 13 November 2007
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.27.
5 of 15
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
MLD159
20
MLD160
20
handbook, halfpage
handbook, halfpage
ID
(mA)
16
ID
(mA)
16
V G1 S = 1.4 V
1.3 V
1.2 V
12
V G2 S = 4 V 3 V
2.5 V
2V
12
1.1 V
1.5 V
8
8
1.0 V
0.9 V
4
4
1V
0
0
0
4
8
12
0
16
0.4
0.8
1.2
1.6
2.0
V G1 S (V)
V DS (V)
VG2-S = 4 V.
Tj = 25 °C.
VDS = 9 to 12 V.
Tj = 25 °C.
Fig.7 Output characteristics; typical values.
MLD161
250
Fig.8 Transfer characteristics; typical values.
MLD162
40
handbook, halfpage
handbook, halfpage
I G1
(µA)
V G2 S = 4 V
y fs
(mS)
200
3.5 V
V G2 S = 4 V
3.5 V
30
3V
150
3V
20
100
2.5 V
10
2V
50
2.5 V
2V
0
0
0
1
2
V G1 S (V)
3
VDS = 9 to 12 V.
Tj = 25 °C.
Fig.9
0
10
20
I D (mA)
30
VDS = 9 to 12 V.
Tj = 25 °C.
Gate 1 current as a function of gate 1
voltage; typical values.
Fig.10 Forward transfer admittance as a function
of drain current; typical values.
Rev. 02 - 13 November 2007
6 of 15
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
MLD164
MLD163
16
20
handbook, halfpage
handbook, halfpage
ID
(mA)
R G1 = 100 kΩ
ID
(mA)
12
147 kΩ
15
180 kΩ
205 kΩ
8
249 kΩ
10
301 kΩ
402 kΩ
511 kΩ
4
5
0
0
0
20
40
60
I G1 (µA)
80
0
4
8
12
V GG = V DS (V)
16
VG2-S = 4 V.
RG1 connected to VGG.
Tj = 25 °C.
VDS = 9 to 12 V.
VG2-S = 4 V.
Tj = 25 °C.
Fig.11 Drain current as a function of gate 1 current;
typical values.
MLD165
12
handbook, halfpage
Fig.12 Drain current as a function of gate 1 supply
voltage (= VGG) and drain supply voltage;
typical values; see Fig.27.
MLD166
12
handbook, halfpage
ID
(mA)
ID
(mA)
8
8
4
4
0
0
0
2
4
6
8
10
V GG (V)
VDS = 9 V; VG2-S = 4 V.
RG1 = 180 kΩ (connected to VGG); Tj = 25 °C.
0
4
8
V GG (V)
12
VDS = 12 V; VG2-S = 4 V.
RG1 = 250 kΩ (connected to VGG); Tj = 25 °C.
Fig.13 Drain current as a function of gate 1 voltage
(= VGG); typical values; see Fig.27.
Fig.14 Drain current as a function of gate 1 voltage;
(= VGG); typical values; see Fig.27.
Rev. 02 - 13 November 2007
7 of 15
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
MLD167
50
handbook, halfpage
MLD168
50
handbook, halfpage
I G1
(µA)
40
I G1
(µA)
40
V GG = 9 V
V GG = 12 V
11 V
8V
10 V
7V
30
9V
30
8V
6V
7V
5V
20
20
4V
10
10
0
0
0
2
4
V G2 S (V)
6
0
2
4
6
V G2 S (V)
VDS = 9 V.
RG1 = 180 kΩ (connected to VGG).
Tj = 25 °C.
VDS = 12 V.
RG1 = 250 kΩ (connected to VGG).
Tj = 25 °C.
Fig.15 Gate 1 current as a function of gate 2 voltage;
typical values.
Fig.16 Gate 1 current as a function of gate 2 voltage;
typical values.
MLD169
16
MLD170
16
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
V GG = 9 V
12
12
V GG = 12 V
8
11 V
10 V
9V
8V
7V
8V
7V
6V
8
5V
4V
4
4
0
0
0
2
4
V G2 S (V)
6
0
2
VDS = 9 V.
VDS = 12 V.
RG1 = 180 kΩ (connected to VGG).
Tj = 25 °C.
RG1 = 250 kΩ (connected to VGG).
Tj = 25 °C.
Fig.17 Drain current as a function of the gate 2
voltage; typical values; see Fig.27.
4
V G2 S (V)
6
Fig.18 Drain current as a function of the gate 2
voltage; typical values; see Fig.27.
Rev. 02 - 13 November 2007
8 of 15
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
MLD172
10 2
handbook, halfpage
MLD173
10 3
10 3
ϕ rs
(deg)
y rs
(µS)
y is
(mS)
10 2
10
ϕ rs
b is
10 2
y rs
10
1
10
g is
10 1
10
102
f (MHz)
1
10 3
10
VDS = 9 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
102
f (MHz)
10 3
1
VDS = 9 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.19 Input admittance as a function of
frequency; typical values.
MLD174
10 2
Fig.20 Reverse transfer admittance and phase as
a function of frequency; typical values.
10 2
ϕ fs
y fs
y fs
(mS)
MLD175
10
handbook, halfpage
yos
(mS)
bos
(deg)
1
ϕ fs
10
10
10 1
gos
1
1
10
102
f (MHz)
10 3
VDS = 9 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
10 2
10
102
f (MHz)
10 3
VDS = 9 V; VG2 = 4 V.
ID =10 mA; Tamb = 25 °C.
Fig.21 Forward transfer admittance and phase as
a function of frequency; typical values.
Fig.22 Output admittance as a function of
frequency; typical values.
Rev. 02 - 13 November 2007
9 of 15
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
MLD176
10 2
handbook, halfpage
MLD177
10 3
10 3
ϕ rs
(deg)
y rs
(µS)
y is
(mS)
10 2
10
ϕ rs
b is
10 2
y rs
10
1
10
g is
10 1
10
102
f (MHz)
1
1
10 3
10
VDS = 12 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
102
f (MHz)
10 3
VDS = 12 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.23 Input admittance as a function of
frequency; typical values.
MLD178
10 2
y fs
10 2
ϕ fs
y fs
(mS)
Fig.24 Reverse transfer admittance and phase as
a function of frequency; typical values.
MLD179
10
handbook, halfpage
yos
(mS)
(deg)
bos
1
ϕ fs
10
10
10 1
gos
1
1
10
102
f (MHz)
10 3
VDS = 12 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
10 2
10
102
f (MHz)
10 3
VDS = 12 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
Fig.25 Forward transfer admittance and phase as
a function of frequency; typical values.
Fig.26 Output admittance as a function of
frequency; typical values.
Rev. 02 - 13 November 2007
10 of 15
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
VAGC
handbook, full pagewidth
R1
10 k Ω
C1
4.7 nF
C2
R GEN
50 Ω
R2
50 Ω
C3
DUT
4.7 nF
12 pF
L1
≈ 450 nH
RL
50 Ω
C4
RG
4.7 nF
VI
VGG
V DS
MGC420
For VGG = VDS = 9 V, RG = 180 kΩ.
For VGG = VDS = 12 V, RG = 250 kΩ.
Fig.27 Cross-modulation test set-up.
Rev. 02 - 13 November 2007
11 of 15
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
Table 1
f
(MHz)
BF1100; BF1100R
Scattering parameters: VDS = 9 V; VG2-S = 4 V; ID = 10 mA
s11
s21
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.986
−3.6
2.528
174.4
0.001
63.7
1.000
−2.0
100
0.983
−7.4
2.531
169.8
0.001
80.7
1.000
−4.2
200
0.974
−14.7
2.490
159.5
0.002
81.0
0.996
−8.1
300
0.960
−21.8
2.446
149.8
0.002
80.3
0.994
−11.9
400
0.953
−28.7
2.412
139.8
0.003
76.3
0.992
−15.7
500
0.933
−35.4
2.341
130.1
0.003
76.5
0.987
−19.4
600
0.915
−42.0
2.283
120.4
0.004
79.0
0.984
−23.0
700
0.895
−47.9
2.205
111.6
0.003
81.5
0.981
−26.7
800
0.880
−53.5
2.146
102.9
0.003
90.8
0.978
−30.3
900
0.864
−59.6
2.087
93.4
0.003
106.6
0.974
−33.9
1000
0.839
−65.0
1.998
84.4
0.003
135.4
0.971
−37.6
Table 2
Table 3
f
(MHz)
Noise data: VDS = 9 V; VG2-S = 4 V; ID = 10 mA
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
800
2.00
0.67
43.9
rn
0.89
Scattering parameters: VDS = 12 V; VG2-S = 4 V; ID = 10 mA
s21
s11
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.986
−3.7
2.478
174.7
0.001
72.2
1.000
−1.6
100
0.984
−7.4
2.480
170.3
0.001
80.9
1.000
−3.5
200
0.974
−14.6
2.440
160.6
0.002
82.7
0.997
−6.6
300
0.960
−21.8
2.400
151.4
0.002
79.9
0.996
−9.7
400
0.953
−28.7
2.371
141.9
0.003
77.7
0.994
−12.8
500
0.933
−35.3
2.306
132.7
0.003
77.1
0.991
−15.8
600
0.915
−41.9
2.255
123.6
0.004
77.1
0.989
−18.7
700
0.894
−47.8
2.183
115.3
0.004
79.3
0.986
−21.7
800
0.879
−53.5
2.131
107.2
0.003
83.9
0.984
−24.6
900
0.863
−59.5
2.080
98.2
0.003
95.1
0.982
−27.5
1000
0.838
−65.0
1.999
89.7
0.003
115.8
0.980
−30.4
Table 4
Noise data: VDS = 12 V; VG2-S = 4 V; ID = 10 mA
Γopt
f
(MHz)
Fmin
(dB)
(ratio)
(deg)
800
2.00
0.66
43.3
Rev. 02 - 13 November 2007
rn
0.97
12 of 15
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF1100; BF1100R
PACKAGE OUTLINES
handbook, full pagewidth
0.75
0.60
3.0
2.8
0.150
0.090
B
1.9
4
3
0.1
max
o
10
max
0.2 M A B
A
2.5
max
1.4
1.2
o
10
max
2
1
1.1
max
o
30
max
0.88
0
0.1
0.48
0
0.1
0.1 M A B
MBC845
1.7
TOP VIEW
Dimensions in mm.
Fig.28 SOT143.
3.0
2.8
handbook, full pagewidth
0.150
0.090
0.40
0.25
B
1.9
3
4
0.1
max
o
10
max
0.2 M A
A
1.4
1.2
o
2.5
max
10
max
2
1.1
max
o
30
max
1
0.48
0.38
0.88
0.78
MBC844
1.7
0.1 M B
TOP VIEW
Dimensions in mm.
Fig.29 SOT143R.
Rev. 02 - 13 November 2007
13 of 15
BF1100; BF1100R
NXP Semiconductors
Dual-gate MOS-FETs
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Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 02 - 13 November 2007
14 of 15
BF1100; BF1100R
NXP Semiconductors
Dual-gate MOS-FETs
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BF1100_N_2
20071113
Product data sheet
-
BF1100_1
Modifications:
BF1100_1
•
Fig. 1 and 2 on page 2; Figure note changed
19950425
Product specification
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 13 November 2007
Document identifier: BF1100_N_2