PHILIPS BLV90

DISCRETE SEMICONDUCTORS
DATA SHEET
BLV90
UHF power transistor
Product specification
February 1996
Philips Semiconductors
Product specification
UHF power transistor
BLV90
DESCRIPTION
FEATURES
NPN silicon planar epitaxial transistor designed for use in
mobile radio transmitters in the 900 MHz band.
• diffused emitter-ballasting resistors for an optimum
temperature profile.
• gold metallization ensures excellent reliability.
• the device can be applied at rated output power without
an external heatsink when it is mounted on a
printed-circuit board (see Fig.6).
The transistor has a 4-lead envelope with a ceramic cap
(SOT-172D). All leads are isolated from the mounting
base.
QUICK REFERENCE DATA
RF performance at Ta = 25 °C in a common-emitter class-B circuit.(1)
ηC
%
MODE OF OPERATION
VCE
V
f
MHz
PL
W
Gp
dB
Narrow band; CW
12.5
900
1
> 7.5
> 50
9.6
900
1
typ. 7.0
typ. 57
Note
1. Device mounted on a printed-circuit board (see Fig.6).
PIN CONFIGURATION
PINNING - SOT172D.
PIN
handbook, halfpage
1
DESCRIPTION
1
emitter
2
base
3
collector
4
emitter
3
2
4
Top view
MSB007
Fig.1 Simplified outline. SOT172D.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
February 1996
2
Philips Semiconductors
Product specification
UHF power transistor
BLV90
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
VCBO
max.
36 V
Collector-emitter voltage (open base)
VCEO
max.
16 V
Emitter-base voltage (open collector)
VEBO
max.
3 V
DC or average
IC; IC(AV)
max.
0.2 A
(peak value); f > 1 MHz
ICM
max.
0.6 A
Ptot(rf)
max.
3.5 W
Collector current
Total power dissipation
f > 1 MHz; Tmb < 105 °C
Storage temperature
Tstg
−65 to + 150 °C
Operating junction temperature
Tj
max.
200 °C
MDA389
5
handbook, halfpage
Ptot(rf)
(W)
II
4
I
3
2
1
0
0
40
80
120
160
Tmb (°C)
I Continuous RF operation (f > 1 MHz)
II Short-time RF operation during mismatch (f > 1 MHz)
Fig.2 Power/temperature curve.
THERMAL RESISTANCE
Dissipation = 2.25 W
From junction to ambient(1) (f > 1 MHz)
Ta = 25 °C
Rth j−a (RF)
max.
60 K/W
Rth j-mb (RF)
max.
19 K/W
From junction to mounting base
Tmb = 25 °C (f > 1 MHz)
Note
1. Device mounted on a printed-circuit board (see Fig.6).
February 1996
3
Philips Semiconductors
Product specification
UHF power transistor
BLV90
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-base breakdown voltage
open emitter; IC = 2.5 mA
V(BR)CBO
>
36 V
V(BR)CEO
>
16 V
V(BR)EBO
>
3 V
ICES
<
1 mA
ESBR
>
0.3 mJ
hFE
>
25
Cc
typ.
1.8 pF
Cre
typ.
1.0 pF
Cc-mb
typ.
0.5 pF
Collector-emitter breakdown voltage
open base; IC = 10 mA
Emitter-base breakdown voltage
open collector; IE = 0.5 mA
Collector cut-off current
VBE = 0; VCE = 16 V
Second breakdown energy
L = 25 mH; f = 50 Hz; RBE = 10 Ω
D.C. current gain
IC = 0.15 A; VCE = 10 V
Collector capacitance at f = 1 MHz
IE = ie = 0; VCB = 12.5 V
Feedback capacitance at f = 1 MHz
IC = 0; VCE = 12.5 V
Collector-mounting base capacitance
MDA390
120
MDA391
4
handbook, halfpage
handbook, halfpage
hFE
Cc
(pF)
VCE =
12.5 V
3
10 V
80
2
40
1
0
0
0
150
300
450
IC (mA)
600
0
Fig.3 Tj = 25 °C; typical values.
February 1996
4
8
12
VCB (V)
16
Fig.4 IE = ie = 0; f = 1 MHz; typical values.
4
Philips Semiconductors
Product specification
UHF power transistor
BLV90
APPLICATION INFORMATION
RF performance in CW operation (common-emitter circuit, class-B): f = 900 MHz; Ta = 25 °C
MODE OF OPERATION
VCE
V
PL
W
narrow band; CW
12.5
1
9.6
1
>
50
typ. 60
typ. 7.0
typ. 57
L9
R1
+VCC
R2
L8
C5
C6
,,,,,,
,,,,,,,,,
,,,,,, ,,,,,,,,,
L5
L2
C7
C4
50 Ω
>
7.5
typ. 9.0
handbook, full pagewidth
C1
ηC
%
Gp
dB
L1
C2
L3
T.U.T.
L4
L6
C3
C10
L7
C8
50 Ω
C9
MDA392
Fig.5 Class-B test circuit at f = 900 MHz.
List of components:
C1
= C10 = 33 pF multilayer ceramic chip capacitor
C2
= C9 = 1.4 to 5.5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C3
= 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002)
C4
= 5.6 pF multilayer ceramic chip capacitor(1)
C5
= 10 pF multilayer ceramic chip capacitor
C6
= 330 pF multilayer ceramic chip capacitor
C7
= 3.9 pF multilayer ceramic chip capacitor(1)
C8
= 1.2 to 3.5 pF film dielectric trimmer (cat. no. 2222 809 05001)
L1
= L7 = 50 Ω stripline (30.8 mm × 2.4 mm)
L2
= 60 nH; 4 turns closely wound enamelled Cu wire (0.4 mm); int. dia. 3 mm; leads 2 × 5 mm
L3
= 38 Ω stripline (16.0 mm × 3.5 mm)
L4
= 38 Ω stripline (11.0 mm × 3.5 mm)
L5
= 280 nH; 15 turns closely wound enamelled Cu wire (0.4 mm); int. dia. 3 mm; leads 2 × 5 mm
L6
= 50 Ω stripline (41.2 mm × 2.4 mm)
L8
= L9 = Ferroxcube wideband HF choke, grade 3B (cat. no. 4312 020 36642)
R1
= R2 = 10 Ω ± 5%; 0.25 W metal film resistor
L1, L3, L4, L6 and L7 are striplines on a double Cu-clad printed-circuit board with P.T.F.E. fibre-glass dielectric
(εr = 2.2); thickness 1⁄32 inch; thickness of copper-sheet 2 × 35 µm.
Notes
1. American Technical Ceramics capacitor type 100A or capacitor of same quality.
2. Device mounted on a printed-circuit board (see Fig.6).
February 1996
5
Philips Semiconductors
Product specification
UHF power transistor
BLV90
160 mm
handbook, full pagewidth
copper straps
80 mm
rivets
M2
+VCC
L9
C6
L8
C5
L5
R1
L2
C1
R2
E
L3
B
L1
C7
L4
C
L6
C10
L7
E
C2
C3
C8
C9
MDA393
The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side
is unetched copper serving as groundplane. Earth connections are made by hollow rivets and
also by fixing-screws and copper straps around the board and under the emitters to provide a
direct contact between the copper on the component side and the groundplane.
Fig.6 Printed-circuit board and component lay-out for 900 MHz class-B test circuit.
February 1996
6
Philips Semiconductors
Product specification
UHF power transistor
BLV90
MDA394
1.6
MDA395
12
handbook, halfpage
handbook, halfpage
PL
(W)
120
ηC
(%)
Gp
(dB)
1.2
Gp
8
80
ηC
0.8
40
4
0.4
0
0
0
0.1
0.2
PS (W)
0.3
0
f = 900 MHz; class-B operation; typical values.
 Tmb = 25 °C; VCE = 12.5 V;
− − − − Ta = 25 °C; VCE = 12.5 V;
- - - - Ta = 25 °C; VCE = 9.6 V
0.8
1.2
PL (W)
0
1.6
f = 900 MHz; class-B operation; typical values.
 Tmb = 25 °C; VCE = 12.5 V;
− − − − Ta = 25 °C; VCE = 12.5 V;
- - - - Ta = 25 °C; VCE = 9.6 V
Fig.7 Load power as a function of source power.
Fig.8
RUGGEDNESS
The device is capable to withstand a full load mismatch
(VSWR = 50; all phases) at rated load power up to a
supply voltage of 15.5 V at Ta = 25 °C. Device mounted on
a printed-circuit board (see Fig.6).
February 1996
0.4
7
Power gain and efficiency as a function of
load power.
Philips Semiconductors
Product specification
UHF power transistor
BLV90
MDA396
8
MDA397
25
handbook, halfpage
handbook, halfpage
Zi
(Ω)
6
XL
ZL
(Ω)
23
ri
4
21
2
19
RL
xi
17
0
−2
800
840
880
920
15
800
960
1000
f (MHz)
VCE = 12.5 V; PL = 1 W; f = 800 - 960 MHz;
Tmb = 25 °C; class-B operation; typical values.
MDA563
Gp
(dB)
8
4
850
900
950
f (MHz)
1000
VCE = 12.5 V; PL = 1 W; f = 800 - 960 MHz;
Tmb = 25 °C; class-B operation; typical values.
Fig.11 Power gain as a function of frequency.
February 1996
920
960
1000
f (MHz)
Fig.10 Load impedance (series components).
handbook, halfpage
0
800
880
VCE = 12.5 V; PL = 1 W; f = 800 - 960 MHz;
Tmb = 25 °C; class-B operation; typical values.
Fig.9 Input impedance (series components).
12
840
8
Philips Semiconductors
Product specification
UHF power transistor
BLV90
PACKAGE OUTLINE
Studless ceramic package; 4 leads
SOT172D
D
A
Q
c
D1
H
b
4
b1
H
1
3
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
b1
c
D
D1
H
Q
mm
3.71
2.89
3.31
3.04
0.89
0.63
0.16
0.10
5.20
4.95
5.33
5.08
26.17
24.63
1.15
0.88
inches
0.146
0.114
0.13
0.12
0.035 0.006
0.025 0.004
0.205 0.210
0.195 0.200
1.03
0.97
0.045
0.035
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-06-28
SOT172D
February 1996
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
UHF power transistor
BLV90
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
February 1996
10