DISCRETE SEMICONDUCTORS DATA SHEET BLU20/12 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU20/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. • multi-base structure and emitter-ballasting resistors for an optimum temperature profile The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. • gold metallization ensures excellent reliability. • internal matching to achieve an optimum wideband capability and high power gain. QUICK REFERENCE DATA Envelope SOT-119 Mode of operation class-B; c.w. Collector-emitter voltage (d.c.) VCE 12,5 V Frequency f 470 MHz Load power PL 20 W Power gain GP > 6,5 dB Collector efficiency ηc > 55 % Heatsink temperature Th PIN CONFIGURATION PINNING 25 °C PIN handbook, halfpage 1 2 3 4 5 6 DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter MSB006 Fig.1 Simplified outline, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification UHF power transistor BLU20/12 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134). Collector-base voltage (open emitter) peak value VCBOM max. 36 V Collector-emitter voltage (open base) VCEO max. 16,5 V Emitter-base voltage (open collector) VEBO max. 4 V d.c. or average IC max. 4 A (peak value); f > 1 MHz ICM max. 12 A at Tmb = 25 °C Ptot (d.c.) max. 38 W f > 1 MHz; Tmb = 25 °C Ptot (r.f.) max. 44 W Collector current Total power dissipation Storage temperature Tstg Operating junction temperature Tj MDA313 10 −65 to + 150 °C 200 °C max. MDA314 80 handbook, halfpage handbook, halfpage Ptot (W) IC (A) Tmb = 25 °C Th = 70 °C 60 III 1 40 II I 20 10−1 1 10 VCE (V) 0 102 0 I 40 80 120 Th (°C) 160 Continuous operation II Continuous operation (f > 1 MHz) III Short-time operation during mismatch; (f > 1 MHz) Rth mb-h = 0,2 K/W Fig.3 Power/temperature derating curves Fig.2 D.C. SOAR. THERMAL RESISTANCE (dissipation = 37 W; Tmb = 25 °C, i.e. Th = 18 °C) From junction to mounting base (d.c. dissipation) Rth j-mb(d.c.) max 4,6 K/W (r.f. dissipation) Rth j-mb(r.f.) max 4,1 K/W Rth mb-h max 0,2 K/W From mounting base to heatsink August 1986 3 Philips Semiconductors Product specification UHF power transistor BLU20/12 CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage IC = 25 mA; open emitter V(BR)CBO > 36 V V(BR)CEO > 16,5 V V(BR)EBO > 4 V ICES < 12,5 mA ESBR > 5,3 mJ > 15 typ. 60 CC typ. 53 pF Cre typ. 33 pF Ccf typ. 3 pF Collector-emitter breakdown voltage IC = 50 mA; open base Emitter-base breakdown voltage IE = 5 mA; open collector Collector cut-off current VBE = 0; VCE = 20 V Second breakdown energy L = 25 mH; f = 50 Hz; RBE = 10 Ω D.C. current gain IC = 2,7 A; VCE = 10 V hFE Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 12,5 V Feed-back capacitance at f = 1 MHz IC = 0; VCE = 12,5 V Collector-flange capacitance MDA315 80 MDA316 160 handbook, halfpage handbook, halfpage hFE VCE = 12.5 V Cc (pF) 60 10 V 120 40 80 20 40 0 0 0 2 4 6 8 IC (A) 10 0 Fig.4 Tj = 25 °C; typ. values. August 1986 4 8 12 VCB (V) 16 Fig.5 IE = Ie = 0; f = 1 MHz; typ. values. 4 Philips Semiconductors Product specification UHF power transistor BLU20/12 APPLICATION INFORMATION Mode of operation in narrow band test circuit; class-B; c.w. Collector-emitter voltage (d.c.) VCE 12,5 V Frequency f 470 MHz Load power PL Power gain Gp Collector efficiency ηc Heatsink temperature Th R2 handbook, full pagewidth 20 W > 6,5 dB typ. 7,8 dB > 55 % typ. 64 % 25 °C C5 L7 ,,,, ,,,, ,,,,,,, ,,,, ,,, ,,,,,,, ,,,, ,,, L8 R1 C6 +VCC C10 L2 C3 50 Ω L1 L5 T.U.T. L3 C7 L4 L6 C1 C2 50 Ω C9 C8 C4 MDA317 Fig.6 Class-B test circuit at f = 470 MHz. August 1986 5 Philips Semiconductors Product specification UHF power transistor BLU20/12 List of components: C1 = C9 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002) C2 = 2 to 9 pF film dielectric trimmer (cat.no. 2222 809 09002) C3 = C4 = 8,2 pF multilayer ceramic chip capacitor (100A type) (1) C5 = 100 nF polyester film capacitor C6 = 120 pF multilayer ceramic chip capacitor C7 = 8,2 pF multilayer ceramic chip capacitor (100B type) (1) C8 = 2 to 18 pF film dielectric trimmer (cat.no. 2222 809 09003) C10 = 2,2 µF electrolytic capacitor L1 = 50 Ω stripline (43,5 mm × 4,0 mm) L2 = 100 nH; 5 turns closely wound enamelled Cu-wire (0,5 mm); int. diam. 4 mm; leads 2 × 5 mm L3 = 37,6 Ω stripline (8,0 mm × 6,0 mm) L4 = 37,6 Ω stripline (9,0 mm × 6,0 mm) L5 = 74,4 Ω stripline (22,5 mm × 2,0 mm) L6 = 37,6 Ω stripline (18,0 mm × 6,0 mm) L7 = L8 = Ferroxcube wideband h.f. choke, grade 3B (cat.no. 4312 020 36642) R1 = 1 Ω ± 5%; 0,4 W metal film resistor (MR25 type) R2 = 10 Ω ± 5%; 0,4 W metal film resistor (MR25 type) L1, L3, L4, L5 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,74); thickness 1/16 inch. Note 1. American Technical Ceramics capacitor or capacitor of same quality. August 1986 6 Philips Semiconductors Product specification UHF power transistor BLU20/12 116 handbook, full pagewidth 70 rivets Fig.7 P.C. board for 470 MHz, class-B test circuit. R2 VCC C5 L7 C10 C6 L8 R1 L5 L2 C1 E E B C L4 E E C3 L1 L3 C4 C9 C7 L6 C8 C2 rivets MDA318 The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as groundplane. Earth connections are made by hollow rivets and also by copper straps under the emitters and around the board to provide a direct contact between the copper on the component side and the ground plane. Dimensions in mm. Fig.8 Component lay-out of 470 MHz, class-B test circuit. August 1986 7 Philips Semiconductors Product specification UHF power transistor BLU20/12 MDA319 40 MDA320 10 Gp (dB) 100 ηC handbook, halfpage handbook, halfpage PL (W) Th = 25 °C Gp (%) 8 80 30 Th = 25 °C 6 70 °C 20 ηC 4 10 60 70 °C 40 20 2 0 0 0 2 4 6 8 1 10 PS (W) VCE = 12,5 V; f = 470 MHz; class-B operation; Th = 25 °C and 70 °C; Rth mb-h = 0,2 K/W; typical values. 20 30 PL (W) 0 40 VCE = 12,5 V; f = 470 MHz; class-B operation; Th = 25 °C and 70 °C; Rth mb-h = 0,2 K/W; typical values. Fig.9 Load power vs. source power. Fig.10 Power gain and efficiency vs. load power. RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) up to 25 W under the following conditions: VCE = 15,5 V; f = 470 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W. August 1986 10 8 Philips Semiconductors Product specification UHF power transistor BLU20/12 MDA321 4 MDA322 5 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) ri RL 3 3 xi 2 1 1 −1 XL 0 400 430 460 490 f (MHz) −3 400 520 VCE = 12,5 V; PL = 20 W; f = 400 − 512 MHz; Th = 25 °C; class-B operation; Rth mb-h = 0,2 K/W; typical values. MDA323 8 6 4 2 430 460 490 f (MHz) 520 VCE = 12,5 V; PL = 20 W; f = 400 − 512 MHz; Th = 25 °C; class-B operation; Rth mb-h = 0,2 K/W; typical values. Fig.13 Power gain versus frequency. August 1986 490 f (MHz) 520 Fig.12 Load impedance (series components). handbook, halfpage 0 400 460 VCE = 12,5 V; PL = 20 W; f = 400 − 512 MHz; Th = 25 °C; class-B operation; Rth mb-h = 0,2 K/W; typical values. Fig.11 Input impedance (series components). 10 Gp (dB) 430 9 Philips Semiconductors Product specification UHF power transistor BLU20/12 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT119A A F q C U1 B H1 w2 M C b2 2 H c 4 6 p U2 D1 U3 D w1 M A B A 1 3 5 b1 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 b2 mm 7.39 6.32 5.59 5.33 5.34 5.08 4.07 3.81 inches c D w2 w3 4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06 1.02 0.26 0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475 0.04 0.01 OUTLINE VERSION e D1 0.18 12.86 12.83 6.48 0.07 12.59 12.57 F H JEDEC EIAJ SOT119A August 1986 p 2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97 REFERENCES IEC H1 Q q U1 U2 U3 EUROPEAN PROJECTION w1 ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification UHF power transistor BLU20/12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11