MOTOROLA MRF150

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by MRF150/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed primarily for linear large–signal output stages up to 150 MHz
frequency range.
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
150 W, to 150 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
• Superior High Order IMD
• IMD(d3) (150 W PEP) — – 32 dB (Typ)
• IMD(d11) (150 W PEP) — – 60 dB (Typ)
• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
D
G
CASE 211–11, STYLE 2
S
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
125
Vdc
Drain–Gate Voltage
VDGO
125
Vdc
VGS
± 40
Vdc
Drain Current — Continuous
ID
16
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
300
1.71
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
TJ
200
°C
Symbol
Max
Unit
RθJC
0.6
°C/W
Gate–Source Voltage
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
RF DEVICE DATA
MOTOROLA
Motorola, Inc. 1997
MRF150
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
125
—
—
Vdc
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
IDSS
—
—
5.0
mAdc
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
IGSS
—
—
1.0
µAdc
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
5.0
Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
VDS(on)
1.0
3.0
5.0
Vdc
gfs
4.0
7.0
—
mhos
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
—
400
—
pF
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Coss
—
240
—
pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
—
40
—
pF
Gps
—
—
17
8.0
—
—
dB
η
—
45
—
%
IMD(d3)
IMD(d11)
—
—
– 32
– 60
—
—
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
ON CHARACTERISTICS
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA)
f = 30 MHz
f = 150 MHz
Drain Efficiency
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 3.75 A)
Intermodulation Distortion (1)
(VDD = 50 V, Pout = 150 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA)
dB
ψ
Load Mismatch
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 3.0 A)
GPS
IMD(d3)
IMD(d9 – 13)
—
—
—
20
– 50
– 75
—
—
—
dB
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
L2
L1
BIAS +
0 – 12 V –
+
C5
C6
C7
C8
C9
+
C10
–
–
50 V
R1
DUT
T2
RF
INPUT
T1
R3
C2
C4
C1
R2
C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or
Monolythic with Short Leads
C3 — 200 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C4 — 15 pF Unencapsulated Mica or Dipped Mica
with Short Leads
RF
OUTPUT
C3
C10 — 10 µF/100 V Electrolytic
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel
T1 — 9:1 Broadband Transformer
T2 — 1:9 Broadband Transformer
Figure 1. 30 MHz Test Circuit (Class AB)
MRF150
2
MOTOROLA RF DEVICE DATA
15
VDD = 50 V
IDQ = 250 mA
Pout = 150 W (PEP)
10
5
0
2
5
10
20
50
100
VDD = 50 V
100
50
40 V
00
30
VDD = 50 V
40
V
0
1
IDQ = 250 mA
2
3
4
6
5
Pin, INPUT POWER (WATTS)
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
1000
– 30
– 35
150 MHz
f T, UNITY GAIN FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dB)
20
100
f, FREQUENCY (MHz)
d3
– 40
– 45
d5
– 50
VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz
– 30
30 MHz
– 35
– 40
d3
– 45
– 50
IDQ = 250 mA
10
250
200
150
50
0
200
150 MHz
POWER GAIN (dB)
20
250
200
150
30 MHz
Pout , OUTPUT POWER (WATTS)
25
0
d5
20
40
60
80
100
120
140
160
VDS = 30 V
800
15 V
600
400
200
0
0
5
Pout, OUTPUT POWER (WATTS PEP)
10
15
20
ID, DRAIN CURRENT (AMPS)
Figure 4. IMD versus Pout
Figure 5. Common Source Unity Gain Frequency
versus Drain Current
IDS , DRAIN CURRENT (AMPS)
10
8
6
4
2
0
VDS = 10 V
gfs = 5 mhos
0
2
4
6
8
10
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 6. Gate Voltage versus
Drain Current
MOTOROLA RF DEVICE DATA
MRF150
3
150
90
f = 175 MHz
136
30
Zin
15
90
30
f = 175 MHz
15
7.5
7.5
4.0 ZOL*
Zo = 10 Ω
2.0
VDD = 50 V
IDQ = 250 mA
Pout = 150 W PEP
4.0
2.0
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
NOTE: Gate Shunted by 25 Ohms.
Figure 7. Series Equivalent Impedance
RFC2
+ 50 Vdc
C10
L4
R1
BIAS
0 – 12 V
+
C4
C5
DUT
L3
L1
RF INPUT
C3
RF OUTPUT
L2
C6
C2
C11
C9
R3
C1
+
C7
C8
R2
C1, C2, C8 — Arco 463 or equivalent
C3 — 25 pF, Unelco
C4 — 0.1 µF, Ceramic
C5 — 1.0 µF, 15 WV Tantalum
C6 — 25 pF, Unelco J101
C7 — 25 pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05 µF, Ceramic
C11 — 15 µF, 60 WV Electrolytic
L1 — 3/4″, 18 AWG into Hairpin
L2 — Printed Line, 0.200″ x 0.500″
L3 — 1″, #16 AWG into Hairpin
L4 — 2 Turns #16 AWG, 5/16 ID
RFC1 — 5.6 µH, Choke
RFC2 — VK200–4B
R1 — 150 Ω, 1.0 W Carbon
R2 — 10 kΩ, 1/2 W Carbon
R3 — 120 Ω, 1/2 W Carbon
Figure 8. 150 MHz Test Circuit (Class AB)
MRF150
4
MOTOROLA RF DEVICE DATA
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between the terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during the
fabrication of the RF MOSFET results in a junction capacitance from drain–to–source (Cds).
These capacitances are characterized as input (Ciss),
output (Coss) and reverse transfer (Crss) capacitances on data
sheets. The relationships between the inter–terminal capacitances and those given on data sheets are shown below. The
Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operating conditions in RF applications.
DRAIN
Cgd
GATE
Cds
Cgs
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
SOURCE
LINEARITY AND GAIN CHARACTERISTICS
In addition to the typical IMD and power gain data
presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the
small signal unity current gain frequency at a given drain
current level. This is equivalent to fT for bipolar transistors.
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some
extent.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
full–on condition. This on–resistance, VDS(on), occurs in the
linear region of the output characteristic and is specified under
specific test conditions for gate–source voltage and drain
current. For MOSFETs, VDS(on) has a positive temperature
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide. The
input resistance is very high — on the order of 109 ohms —
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are
essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on the
input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection
is required, an external zener diode is recommended.
EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY
Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RCE(sat) =
MOTOROLA RF DEVICE DATA
Drain
Source
Gate
V(BR)DSS
VDGO
ID
IDSS
IGSS
VGS(th)
VDS(on)
Ciss
Coss
gfs
VDS(on)
VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
rDS(on) =
ID
IC
MRF150
5
PACKAGE DIMENSIONS
A
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
M
1
M
Q
DIM
A
B
C
D
E
H
J
K
M
Q
R
U
4
R
2
B
3
D
K
J
C
H
E
SEATING
PLANE
INCHES
MIN
MAX
0.960
0.990
0.465
0.510
0.229
0.275
0.216
0.235
0.084
0.110
0.144
0.178
0.003
0.007
0.435
–––
45 _NOM
0.115
0.130
0.246
0.255
0.720
0.730
STYLE 2:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
24.39
25.14
11.82
12.95
5.82
6.98
5.49
5.96
2.14
2.79
3.66
4.52
0.08
0.17
11.05
–––
45 _NOM
2.93
3.30
6.25
6.47
18.29
18.54
SOURCE
GATE
SOURCE
DRAIN
CASE 211–11
ISSUE N
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
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INTERNET: http://motorola.com/sps
MRF150
6
◊
MRF150/D
MOTOROLA RF DEVICE
DATA