Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ) 150 W, to 150 MHz N–CHANNEL MOS LINEAR RF POWER FET • Superior High Order IMD • IMD(d3) (150 W PEP) — – 32 dB (Typ) • IMD(d11) (150 W PEP) — – 60 dB (Typ) • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR D G CASE 211–11, STYLE 2 S MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 125 Vdc Drain–Gate Voltage VDGO 125 Vdc VGS ± 40 Vdc Drain Current — Continuous ID 16 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 300 1.71 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Symbol Max Unit RθJC 0.6 °C/W Gate–Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 8 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF150 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS — — 1.0 µAdc Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) VDS(on) 1.0 3.0 5.0 Vdc gfs 4.0 7.0 — mhos Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss — 400 — pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss — 240 — pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss — 40 — pF Gps — — 17 8.0 — — dB η — 45 — % IMD(d3) IMD(d11) — — – 32 – 60 — — OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) ON CHARACTERISTICS Forward Transconductance (VDS = 10 V, ID = 5.0 A) DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (SSB) Common Source Amplifier Power Gain (VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 30 MHz f = 150 MHz Drain Efficiency (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 3.75 A) Intermodulation Distortion (1) (VDD = 50 V, Pout = 150 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) dB ψ Load Mismatch (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles) No Degradation in Output Power CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain (VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 3.0 A) GPS IMD(d3) IMD(d9 – 13) — — — 20 – 50 – 75 — — — dB NOTE: 1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. L2 L1 BIAS + 0 – 12 V – + C5 C6 C7 C8 C9 + C10 – – 50 V R1 DUT T2 RF INPUT T1 R3 C2 C4 C1 R2 C1 — 470 pF Dipped Mica C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or Monolythic with Short Leads C3 — 200 pF Unencapsulated Mica or Dipped Mica with Short Leads C4 — 15 pF Unencapsulated Mica or Dipped Mica with Short Leads RF OUTPUT C3 C10 — 10 µF/100 V Electrolytic L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH L2 — Ferrite Bead(s), 2.0 µH R1, R2 — 51 Ω/1.0 W Carbon R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel T1 — 9:1 Broadband Transformer T2 — 1:9 Broadband Transformer Figure 1. 30 MHz Test Circuit (Class AB) MRF150 2 MOTOROLA RF DEVICE DATA 15 VDD = 50 V IDQ = 250 mA Pout = 150 W (PEP) 10 5 0 2 5 10 20 50 100 VDD = 50 V 100 50 40 V 00 30 VDD = 50 V 40 V 0 1 IDQ = 250 mA 2 3 4 6 5 Pin, INPUT POWER (WATTS) Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power 1000 – 30 – 35 150 MHz f T, UNITY GAIN FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dB) 20 100 f, FREQUENCY (MHz) d3 – 40 – 45 d5 – 50 VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz – 30 30 MHz – 35 – 40 d3 – 45 – 50 IDQ = 250 mA 10 250 200 150 50 0 200 150 MHz POWER GAIN (dB) 20 250 200 150 30 MHz Pout , OUTPUT POWER (WATTS) 25 0 d5 20 40 60 80 100 120 140 160 VDS = 30 V 800 15 V 600 400 200 0 0 5 Pout, OUTPUT POWER (WATTS PEP) 10 15 20 ID, DRAIN CURRENT (AMPS) Figure 4. IMD versus Pout Figure 5. Common Source Unity Gain Frequency versus Drain Current IDS , DRAIN CURRENT (AMPS) 10 8 6 4 2 0 VDS = 10 V gfs = 5 mhos 0 2 4 6 8 10 VGS, GATE–SOURCE VOLTAGE (VOLTS) Figure 6. Gate Voltage versus Drain Current MOTOROLA RF DEVICE DATA MRF150 3 150 90 f = 175 MHz 136 30 Zin 15 90 30 f = 175 MHz 15 7.5 7.5 4.0 ZOL* Zo = 10 Ω 2.0 VDD = 50 V IDQ = 250 mA Pout = 150 W PEP 4.0 2.0 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. NOTE: Gate Shunted by 25 Ohms. Figure 7. Series Equivalent Impedance RFC2 + 50 Vdc C10 L4 R1 BIAS 0 – 12 V + C4 C5 DUT L3 L1 RF INPUT C3 RF OUTPUT L2 C6 C2 C11 C9 R3 C1 + C7 C8 R2 C1, C2, C8 — Arco 463 or equivalent C3 — 25 pF, Unelco C4 — 0.1 µF, Ceramic C5 — 1.0 µF, 15 WV Tantalum C6 — 25 pF, Unelco J101 C7 — 25 pF, Unelco J101 C9 — Arco 262 or equivalent C10 — 0.05 µF, Ceramic C11 — 15 µF, 60 WV Electrolytic L1 — 3/4″, 18 AWG into Hairpin L2 — Printed Line, 0.200″ x 0.500″ L3 — 1″, #16 AWG into Hairpin L4 — 2 Turns #16 AWG, 5/16 ID RFC1 — 5.6 µH, Choke RFC2 — VK200–4B R1 — 150 Ω, 1.0 W Carbon R2 — 10 kΩ, 1/2 W Carbon R3 — 120 Ω, 1/2 W Carbon Figure 8. 150 MHz Test Circuit (Class AB) MRF150 4 MOTOROLA RF DEVICE DATA RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate–to–drain (Cgd), and gate–to–source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain–to–source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter–terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full–on condition. This on–resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate–source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high — on the order of 109 ohms — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate–to–source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open–circuited or floating should be avoided. These conditions can result in turn–on of the devices due to voltage build–up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate–to–source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RCE(sat) = MOTOROLA RF DEVICE DATA Drain Source Gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs VDS(on) VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rDS(on) = ID IC MRF150 5 PACKAGE DIMENSIONS A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 M Q DIM A B C D E H J K M Q R U 4 R 2 B 3 D K J C H E SEATING PLANE INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 ––– 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 STYLE 2: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 ––– 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 SOURCE GATE SOURCE DRAIN CASE 211–11 ISSUE N Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRF150 6 ◊ MRF150/D MOTOROLA RF DEVICE DATA