2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-204AE metal can package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. TO-254AA Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • JEDEC registered 2N6764, 2N6766, 2N6768 and 2N6770 number series. • JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/543. Also available in: TO-204AE (TO-3) package (See part nomenclature for all available options.) • RoHS compliant versions available (commercial grade only). (leaded) 2N6764 & 2N6770 APPLICATIONS / BENEFITS • • Low-profile design. Military and other high-reliability applications. MAXIMUM RATINGS @ T A = +25 ºC unless otherwise stated Parameters / Test Conditions Symbol Junction & Storage Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ TA = +25 °C (1) @ TC = +25 °C Drain-Source Voltage, dc 2N6764T1 2N6766T1 2N6768T1 2N6770T1 Gate-Source Voltage, dc (2) Drain Current, dc @ TC = +25 ºC 2N6764T1 2N6766T1 2N6768T1 2N6770T1 (2) Drain Current, dc @ TC = +100 ºC 2N6764T1 2N6766T1 2N6768T1 2N6770T1 (3) Off-State Current (Peak Total Value) 2N6764T1 2N6766T1 2N6768T1 2N6770T1 Source Current 2N6764T1 2N6766T1 2N6768T1 2N6770T1 TJ & Tstg R ӨJC PT V DS V GS I D1 I D2 I DM IS Value Unit -55 to +150 °C 0.83 4 150 100 200 400 500 ± 20 38.0 30.0 14.0 12.0 24.0 19.0 9.0 7.75 152 120 56 48 38.0 30.0 14.0 12.0 o C/W W V V A A A (pk) MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 A Website: www.microsemi.com Notes featured on next page. T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 1 of 9 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 NOTES: 1. 2. Derate linearly by 1.2 W/ºC for T C > +25 ºC. The following formula derives the maximum theoretical I D limit. I D is limited by package and internal wires and may also be limited by pin diameter: 3. I DM = 4 x I D1 as calculated in note 2. MECHANICAL and PACKAGING • • • • • CASE: Nickel plated, hermetically sealed, TO-254AA. TERMINALS: Ni plated, copper cored, kovar. MARKING: Manufacturers ID, part number, date code, Beo (Beryllium Oxide). WEIGHT: 6.5 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6764 T1 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant TO-254AA Package JEDEC type number (see Electrical Characteristics table) Symbol di/dt IF RG V DD V DS V GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 2 of 9 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage 2N6764T1 2N6766T1 2N6768T1 2N6770T1 V GS = 0 V, I D = 1.0 mA Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = 0.25 mA V DS ≥ V GS , I D = 0.25 mA, T J = +125 °C V DS ≥ V GS , I D = 0.25 mA, T J = -55 °C Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125 °C Drain Current V GS = 0 V, V DS = 80 V V GS = 0 V, V DS = 160 V V GS = 0 V, V DS = 320 V V GS = 0 V, V DS = 400 V Drain Current V GS = 0 V, V DS = 100 V, T J = +125 °C V GS = 0 V, V DS = 200 V, T J = +125 °C V GS = 0 V, V DS = 400 V, T J = +125 °C V GS = 0 V, V DS = 500 V, T J = +125 °C Drain Current V GS = 0 V, V DS V GS = 0 V, V DS V GS = 0 V, V DS V GS = 0 V, V DS = 80 V, T J = +125 °C = 160 V, T J = +125 °C = 320 V, T J = +125 °C = 400 V, T J = +125 °C V (BR)DSS 100 200 400 500 2.0 1.0 Max. Unit V 4.0 V 5.0 I GSS1 I GSS2 ±100 ±200 nA 2N6764T1 2N6766T1 2N6768T1 2N6770T1 I DSS1 25 µA 2N6764T1 2N6766T1 2N6768T1 2N6770T1 I DSS2 1.0 mA 2N6764T1 2N6766T1 2N6768T1 2N6770T1 I DSS3 0.25 mA r DS(on)1 0.055 0.085 0.3 0.4 Ω r DS(on)2 0.065 0.09 0.4 0.5 Ω r DS(on)3 0.094 0.153 0.66 0.88 V SD 1.9 1.9 1.7 1.7 2N6764T1 2N6766T1 2N6768T1 2N6770T1 Static Drain-Source On-State Resistance V GS = 10 V, I D = 38.0 A pulsed V GS = 10 V, I D = 30.0 A pulsed V GS = 10 V, I D = 14.0 A pulsed V GS = 10 V, I D = 12.0 A pulsed 2N6764T1 2N6766T1 2N6768T1 2N6770T1 T4-LDS-0101-1, Rev. 1 (121466) Min. V GS(th)1 V GS(th)2 V GS(th)3 Static Drain-Source On-State Resistance V GS = 10 V, I D = 24.0 A pulsed V GS = 10 V, I D = 19.0 A pulsed V GS = 10 V, I D = 9.0 A pulsed V GS = 10 V, I D = 7.75 A pulsed Static Drain-Source On-State Resistance T J = +125 °C V GS = 10 V, I D = 24.0 A pulsed V GS = 10 V, I D = 19.0 A pulsed V GS = 10 V, I D = 9.0 A pulsed V GS = 10 V, I D = 7.75 A pulsed Diode Forward Voltage V GS = 0 V, I D = 38.0 A pulsed V GS = 0 V, I D = 30.0 A pulsed V GS = 0 V, I D = 14.0 A pulsed V GS = 0 V, I D = 12.0 A pulsed Symbol 2N6764T1 2N6766T1 2N6768T1 2N6770T1 2N6764T1 2N6766T1 2N6768T1 2N6770T1 ©2012 Microsemi Corporation Ω V Page 3 of 9 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued) DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: Symbol On-State Gate Charge V GS = 10 V, I D = 38.0 A, V DS V GS = 10 V, I D = 30.0 A, V DS V GS = 10 V, I D = 14.0 A, V DS V GS = 10 V, I D = 12.0 A, V DS = 50 V = 100 V = 200 V = 250 V 2N6764T1 2N6766T1 2N6768T1 2N6770T1 Gate to Source Charge V GS = 10 V, I D = 38.0 A, V DS V GS = 10 V, I D = 30.0 A, V DS V GS = 10 V, I D = 14.0 A, V DS V GS = 10 V, I D = 12.0 A, V DS = 50 V = 100 V = 200 V = 250 V 2N6764T1 2N6766T1 2N6768T1 2N6770T1 Gate to Drain Charge V GS = 10 V, I D = 38.0 A, V DS V GS = 10 V, I D = 30.0 A, V DS V GS = 10 V, I D = 14.0 A, V DS V GS = 10 V, I D = 12.0 A, V DS = 50 V = 100 V = 200 V = 250 V 2N6764T1 2N6766T1 2N6768T1 2N6770T1 Min. Max. Unit Q g(on) 125 115 110 120 nC Q gs 22 22 18 19 nC Q gd 65 60 65 70 nC Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-on delay time I D = 38.0 A, V GS = +10 V, R G = 2.35 Ω, V DD I D = 30.0 A, V GS = +10 V, R G = 2.35 Ω, V DD I D = 14.0 A, V GS = +10 V, R G = 2.35 Ω, V DD I D = 12.0 A, V GS = +10 V, R G = 2.35 Ω, V DD Rise time I D = 38.0 A, V GS = +10 V, R G = 2.35 Ω, V DD I D = 30.0 A, V GS = +10 V, R G = 2.35 Ω, V DD I D = 14.0 A, V GS = +10 V, R G = 2.35 Ω, V DD I D = 12.0 A, V GS = +10 V, R G = 2.35 Ω, V DD Turn-off delay time I D = 38.0 A, V GS = +10 V, R G = 2.35 Ω, V DD I D = 30.0 A, V GS = +10 V, R G = 2.35 Ω, V DD I D = 14.0 A, V GS = +10 V, R G = 2.35 Ω, V DD I D = 12.0 A, V GS = +10 V, R G = 2.35 Ω, V DD Fall time I D = 38.0 A, V GS = +10 V, R G = 2.35 Ω, V DD I D = 30.0 A, V GS = +10 V, R G = 2.35 Ω, V DD I D = 14.0 A, V GS = +10 V, R G = 2.35 Ω, V DD I D = 12.0 A, V GS = +10 V, R G = 2.35 Ω, V DD Diode Reverse Recovery Time di/dt = 100 A/µs, V DD ≤ 30 V, I D di/dt = 100 A/µs, V DD ≤ 30 V, I D di/dt = 100 A/µs, V DD ≤ 30 V, I D di/dt = 100 A/µs, V DD ≤ 30 V, I D T4-LDS-0101-1, Rev. 1 (121466) = 38.0 = 30.0 = 14.0 = 12.0 A A A A Symbol Min. = 50 V = 100 V = 200 V = 250 V 2N6764T1 2N6766T1 2N6768T1 2N6770T1 t d(on) 35 ns = 50 V = 100 V = 200 V = 250 V 2N6764T1 2N6766T1 2N6768T1 2N6770T1 tr 190 ns = 50 V = 100 V = 200 V = 250 V 2N6764T1 2N6766T1 2N6768T1 2N6770T1 t d(off) 170 ns = 50 V = 100 V = 200 V = 250 V 2N6764T1 2N6766T1 2N6768T1 2N6770T1 tf 130 ns t rr 500 950 1200 1600 ns 2N6764T1 2N6766T1 2N6768T1 2N6770T1 ©2012 Microsemi Corporation Page 4 of 9 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Thermal Response (ZtθJC) GRAPHS t 1 , Rectangle Pulse Duration (seconds) FIGURE 1 Thermal Response Curves T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 5 of 9 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 GRAPHS (continued) ID DRAIN CURRENT (AMPERES) ID DRAIN CURRENT (AMPERES) FIGURE 2 – Maximum Drain Current vs Case Temperature Graphs T C CASE TEMPERATURE (ºC) For 2N6766T1 ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) T C CASE TEMPERATURE (ºC) For 2N6764T1 T C CASE TEMPERATURE (ºC) For 2N6768T1 T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation T C CASE TEMPERATURE (ºC) For 2N6770T1 Page 6 of 9 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 GRAPHS (continued) ID, DRAIN CURRENT (AMPERES) FIGURE 3 – Maximum Safe Operating Area ID, DRAIN CURRENT (AMPERES) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6764T1 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6766T1 T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 7 of 9 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 ID DRAIN CURRENT (AMPERES) GRAPHS (continued) ID DRAIN CURRENT (AMPERES) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6768T1 V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) for 2N6770T1 T4-LDS-0101-1, Rev. 1 (121466) ©2012 Microsemi Corporation Page 8 of 9 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Protrusion thickness of ceramic eyelets included in dimension LL. 4. All terminals are isolated from case. 5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. T4-LDS-0101-1, Rev. 1 (121466) Ltr BL CH LD LL LO LS MHD MHO TL TT TW Term 1 Term 2 Term 3 ©2012 Microsemi Corporation Dimensions Inch Millimeters Min Max Min Max 0.535 0.545 13.59 13.84 0.249 0.260 6.32 6.60 0.035 0.045 0.89 1.14 0.510 0.570 12.95 14.48 0.150 BSC 3.81 BSC 0.150 BSC 3.81 BSC 0.139 0.149 3.53 3.78 0.665 0.685 16.89 17.40 0.790 0.800 20.07 20.32 0.040 0.050 1.02 1.27 0.535 0.545 13.59 13.84 Drain Source Gate Notes 3,4 Page 9 of 9