Document No.001-89232 Rev. *B ECN # 4939334 Cypress Semiconductor Product Qualification Report QTP# 090807 VERSION*B September 2015 Truetouch™ Device Family S4AD-5, Fab4 CY8CTMG200 CY8CTMG201 CY8CTMG200A CY8CTMG201A TRUETOUCH™ MULTI-TOUCH GESTURE TOUCHSCREEN CONTROLLER FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Don Darling Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 13 Document No.001-89232 Rev. *B ECN # 4939334 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 083401 Qualify SONOS S8DI-5R Technology in Fab 4 Jan 09 090807 Qualify CY8CTMG200/201 Device on S8DI-5R Technology Feb 09 091801 Qualify 2um Top Metal-3 Process on S8DI-5R Technology at CMI (Note: For marketing part number with ‘A’) Sep 09 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 13 Document No.001-89232 Rev. *B ECN # 4939334 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Truetouch Multi-Touch Device Qualification on S8 (S8DI-5R) Technology in Fab4 CY8CTMG200/201, CY8CTMG200A/201A Marketing Part #: Device Description: Capacitive Touchscreen Controller Cypress Division: Cypress Semiconductor – Programmable System Division (PSD) TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 3 Metal Composition: Metal 1: 100A Ti/3,200A Al 0.5% Cu/300A TiW Metal 2: 100A Ti/3,200A Al 0.5% Cu/300A TiW Metal 3:Pad: 500A Ti / 20000A Al 0.5% Cu Non Pad: 500A Ti / 20000A Al 0.5%Cu / 300 A TiW 4,000A TEOS /7,000A Si3N4 Passivation Type and Materials: Generic Process Technology/Design Rule (µ-drawn): 1P3M, 0.15 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110A & SiO2 / 32A Name/Location of Die Fab (prime) Facility: Fab 4, CMI-Minnesota Die Fab Line ID/Wafer Process ID: S8DI-5R PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 16-Lead QFN AMKOR-MB 48-Lead SSOP CML-R Note: Package Qualification details upon request. 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Page 3 of 13 Document No.001-89232 Rev. *B ECN # 4939334 MAJOR PACKAGE INFORMATION FOR THIS QUALIFICATION Package Designation: LQ32 Package Outline, Type, or Name: 32-Quad Flat No-Lead (QFN) Mold Compound Name/Manufacturer: EME-G770 / Sumitomo Mold Compound Flammability Rating: V-0 PER UL-94 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu/Ag Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Henkel Die Attach Material: QMI-519 Die Attach Method: Epoxy Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0mil Thermal Resistance Theta JA °C/W: 22.17 Package Cross Section Yes/No: N/A MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Fault Coverage: 100% Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 4 of 13 Document No.001-89232 Rev. *B ECN # 4939334 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max=2.1V, 150°C P High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=2.1V, 150°C P High Temperature Steady State life 150°C, 2.1V, Vcc Max P Low Temperature Operating Life -30°C, 2.1V P High Accelerated Saturation Test (HAST) 130°C, 5.25V, 85%RH P Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C P Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C Pressure Cooker 121°C, 100%RH, 15 Psig P Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C Acoustic Microscopy J-STD-020 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Current Density meets the Technology Device Level Reliability Specifications P Data Retention 150°C ± 5°C No Bias P Dynamic Latch-up 125C, 8.5V P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101 P Endurance Test JESD22-A117 P Static Latch-up 85C, ± 200mA P JESD 78A SEM Cross Section JESD26-A Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 13 P Document No.001-89232 Rev. *B ECN # 4939334 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 5516 Devices 1 N/A N/A 181 PPM High Temperature Operating Life1, 2 Long Term Failure Rate 585,000 DHRs 0 0 .7 170 9 FIT 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. 2 Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation 3 AF = Where: E 1 1 exp A - k T 2 T 1 EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. 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Page 6 of 13 Document No.001-89232 Rev. *B ECN # 4939334 Reliability Test Data QTP #: 090807 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej ACOUSTIC, MSL3 CY8CTMG200 4810486 610828990 Malaysia-CA COMP 15 0 CY8CTMG200 4815537 610834184 Malaysia-CA COMP 15 0 CY8CTMG200 4835945 610847274 Malaysia-CA COMP 15 0 STRESS: AGE BOND STRENGTH CY8CTMG200 4827949 610844164 CML-R COMP 3 0 CY8CTMG200 4804681 610822808 Malaysia-CA COMP 3 0 CY8CTMG200 4836589 610852813 Malaysia-CA COMP 3 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8CTMG200 4815537 610834184 Malaysia-CA 500 77 0 CY8CTMG200 4815537 610834184 Malaysia-CA 1000 77 0 CY8CTMG200 4835945 610847274 Malaysia-CA 500 78 0 CY8CTMG200 4835945 610847274 Malaysia-CA 1000 78 0 CY8CTMG200 4836589 610851914 CML-R 500 78 0 CY8CTMG200 4836589 610851914 CML-R 1000 78 0 CY8CTMG200 4810486 610830786 CML-R 168 77 0 CY8CTMG200 4815537 610835437 CML-R 168 77 0 CY8CTMG200 4827949 610844164 CML-R 168 79 0 CY8CTMG200 4835945 610848270 CML-R 168 78 0 CY8CTMG200 4836589 610851914 CML-R 168 76 0 STRESS: STRESS: ENDURANCE ESD-CHARGE DEVICE MODEL, (500V) CY8CTMG200 4810486 610830371 CML-R 500 9 0 CY8CTMG200 4815537 610834184 Malaysia-CA 500 9 0 CY8CTMG200 4835945 610847274 Malaysia-CA 500 9 0 N/A N/A COMP 1 0 STRESS: SEM CROSS SECTION CY8CTMG200 STRESS: Failure Mechanism 4810486 STATIC LATCH-UP (85C, 8.25V) CY8CTMG200 4835945 610847274 Malaysia-CA COMP 6 0 CY8CTMG200 4836589 610852813 Malaysia-CA COMP 6 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 13 Document No.001-89232 Rev. *B ECN # 4939334 CY8CTMG200 4837410 410.23.02 Promex COMP 6 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 13 Document No.001-89232 Rev. *B ECN # 4939334 Reliability Test Data QTP #: 090807 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8CTMG200 4810486 610830371 CML-R 2200 8 0 CY8CTMG200 4815537 610834184 Malaysia-CA 2200 8 0 CY8CTMG200 4835945 610847274 Malaysia-CA 2200 8 0 STRESS: DYNAMIC LATCH-UP (125C, 8.5V) CY8CTMG200 4810486 610828990 Malaysia-CA COMP 5 0 CY8CTMG200 4815537 610834184 Malaysia-CA COMP 5 0 CY8CTMG200 4835945 610847274 Malaysia-CA COMP 5 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max) CY8CTMG200 4827949 610844164 CML-R 48 1002 0 CY8CTMG200 4815537 610835437 CML-R 48 1008 0 CY8CTMG200 4835945 610847274 Malaysia-CA 48 1004 1 CY8CTMG200 4836589 610851747 Malaysia-CA 48 1004 0 STRESS: 4815537 610834184 Malaysia-CA 48 45 0 CY8CTMG200 4835945 610848270 CML-R 45 0 48 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (125C, 5V, Vcc Max) CY8CTMG200 STRESS: Read NV Latch (1) HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5V, Vcc Max) CY8CTMG200 STRESS: Failure Mechanism 4810486 610828990 Malaysia-CA 96 45 0 HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max) CY8CTMG200 4815537 610834184 Malaysia-CA 80 390 0 CY8CTMG200 4815537 610834184 Malaysia-CA 500 390 0 CY8CTMG200 4835945 610847274 Malaysia-CA 80 390 0 CY8CTMG200 4835945 610847274 Malaysia-CA 500 390 0 CY8CTMG200 4836589 610851747 Malaysia-CA 80 390 0 CY8CTMG200 4836589 610851747 Malaysia-CA 500 390 0 (1) Destroyed during failure analysis Company Confidential A printed copy of this document is considered uncontrolled. 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Page 9 of 13 Document No.001-89232 Rev. *B ECN # 4939334 Reliability Test Data QTP #: 090807 Device STRESS: Fab Lot # Assy Lot # Assy Lot Duration Samp Rej HIGH TEMP STEADY STATE LIFE TEST (150C, 2.1V) CY8CTMG200 4810486 610828990 Malaysia-CA 80 77 0 CY8CTMG200 4810486 610828990 Malaysia-CA 168 77 0 CY8CTMG200 4815537 610834184 Malaysia-CA 80 77 0 CY8CTMG200 4815537 610834184 Malaysia-CA 168 77 0 CY8CTMG200 4835945 610848270 CML-R 80 77 0 CY8CTMG200 4835945 610848270 CML-R 168 77 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V CY8CTMG200 4815537 610835437 CML-R 500 77 0 CY8CTMG200 4835945 610848270 CML-R 500 77 0 STRESS: Failure Mechanism HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3) CY8CTMG200 4810486 610828990 Malaysia-CA 128 77 0 CY8CTMG200 4815537 610834184 Malaysia-CA 128 77 0 CY8CTMG200 4815537 610834184 Malaysia-CA 256 77 0 CY8CTMG200 4835945 610847274 Malaysia-CA 128 77 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY8CTMG200 4810486 610828990 Malaysia-CA 168 77 0 CY8CTMG200 4810486 610828990 Malaysia-CA 333 77 0 CY8CTMG200 4815537 610834184 Malaysia-CA 168 77 0 CY8CTMG200 4815537 610834184 Malaysia-CA 288 77 0 CY8CTMG200 4835945 610847274 Malaysia-CA 168 77 0 CY8CTMG200 4835945 610847274 Malaysia-CA 288 77 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8CTMG200 4810486 610828990 Malaysia-CA 500 77 0 CY8CTMG200 4810486 610828990 Malaysia-CA 1000 77 0 CY8CTMG200 4815537 610834184 Malaysia-CA 500 77 0 CY8CTMG200 4815537 610834184 Malaysia-CA 1000 77 0 CY8CTMG200 4835945 610847274 Malaysia-CA 500 77 0 CY8CTMG200 4835945 610847274 Malaysia-CA 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 13 Document No.001-89232 Rev. *B ECN # 4939334 Reliability Test Data QTP #: 091801 Device STRESS: Fab Lot # Assy Lot # Assy Lot Duration Samp Rej AGED BOND CY8CTMG200A 4909973 610916428 Malaysia-CA COMP 3 0 CY8CTMG200A 4909973 610921200 Malaysia-CA COMP 3 0 CY8CTMG200A 4909973 610916429 Malaysia-CA COMP 10 0 CY8CTMG200A 4909973 610921200 Malaysia-CA COMP 10 0 Malaysia-CA COMP 5 0 STRESS: STRESS: BALL SHEAR CONSTRUCTIONAL ANALYSIS CY8CTMG200A STRESS: 4909973 610916428 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max) CY8CTMG200A 4909973 610916428 Malaysia-CA 48 748 0 CY8CTMG200A 4909973 610921200 Malaysia-CA 48 750 0 STRESS: ESD-CHARGE DEVICE MODEL (500V) CY8CTMG200A 4909973 610916427 Malaysia-CA COMP 9 0 CY8CTMG200A 4909973 610921200 Malaysia-CA COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8CTMG200A 4909973 610916427 Malaysia-CA COMP 8 0 CY8CTMG200A 4909973 610921200 Malaysia-CA COMP 8 0 STRESS: Failure Mechanism HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3) CY8CTMG200A 4909973 610916428 Malaysia-CA 128 76 0 CY8CTMG200A 4909973 610921200 Malaysia-CA 128 77 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY8CTMG200A 4909973 610916428 Malaysia-CA 168 77 0 CY8CTMG200A 4909973 610916428 Malaysia-CA 288 77 0 CY8CTMG200A 4909973 610921199 Malaysia-CA 168 77 0 CY8CTMG200A 4909973 610921199 Malaysia-CA 288 77 0 Malaysia-CA COMP 6 0 STRESS: STATIC LATCH-UP 85C, 5.25V, ±200mA) CY8CTMG200A STRESS: 4909973 610916427 TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY8CTMG200A 4909973 610916428 Malaysia-CA 500 77 0 CY8CTMG200A 4909973 610916428 Malaysia-CA 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 13 Document No.001-89232 Rev. *B ECN # 4939334 CY8CTMG200A 4909973 610921199 Malaysia-CA 500 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 13 Document No.001-89232 Rev. *B ECN # 4939334 Document History Page Document Title: Document Number: QTP#090807: TRUETOUCH DEVICE FAMILY "CY8CTMG200/201/200A/201A" S4AD-5, FAB4 001-89232 Rev. ECN Orig. of No. Change ** 4128817 HSTO *A 4507404 HSTO *B 4939334 HSTO AVE Description of Change Initial Spec Release Initiate report as per memo HGA-950. Align qualification report based on the new template in the front page Update Cypress division on Product description table from Consumer and Computation Division to Programmable System Division Deleted obsolete spec#001-11286 on Major Package Information table Update reference contact for Reliability Director Deleted obsolete spec#001-42703 Deleted Malaysia-CA as qualified site Removed distribution and posting from the document history page. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 13