ARF465A(G) ARF465B(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scientific, commercial, medical and industrial RF power amplifier applications up to 60 MHz. • Specified 300 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class C) • Efficiency = 75% • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter ARF465A/B(G) VDSS Drain-Source Voltage 1200 VDGO Drain-Gate Voltage 1200 ID Continuous Drain Current @ TC = 25°C UNIT Volts 6 Amps VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25°C 250 Watts Junction to Case 0.50 °C/W RθJC TJ,TSTG TL -55 to 150 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) 1 MIN TYP MAX 1200 8 (I D(ON) = 3A, VGS = 10V) 25 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) ±100 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 3A) 3 Gate Threshold Voltage (VDS = VGS, ID = 50mA) 3 4 Volts μA nA mhos 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com UNIT Volts 050-4921 Rev B 1-2013 Symbol DYNAMIC CHARACTERISTICS Symbol ARF465A/B(G) MIN TYP MAX 1200 1500 VDS = 200V f = 1 MHz 80 100 30 50 Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time VGS = 15V 7 15 Rise Time VDD = 0.5V 5 10 ID = ID[Cont.] @ 25°C 21 34 RG = 1.6W 12 25 MAX tr td(off) tf VGS = 0V Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS 1 Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 40.68 MHz 13 15 dB 70 75 % VGS = 0V η Drain Efficiency Ψ Electrical Ruggedness VSWR 6:1 VDD = 300V Pout = 150W UNIT No Degradation in Output Power Pulse Test: Pulse width < 380 μS, Duty Cycle < 2% Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 10,000 25 Class C VDD = 300V CAPACITANCE (pf) GAIN (dB) 5000 Pout = 150W 20 15 10 10 0.1 1 10 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 40 50 60 70 80 90 100 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 30 24 VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 6 TJ = -55°C TJ = +25°C TJ = +125°C 0 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-4921 Rev B 1-2013 10 2 Coss 100 Crss 0 10 20 4 500 50 5 8 Ciss 1000 OPERATION HERE (ON) LIMITED BY R DS 10 5 100uS 1mS 1 .5 .1 10mS TC =+25°C TJ =+150°C SINGLE PULSE 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area DC ARF465A/B(G) 10 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.1 1 0.9 0.8 0.7 6.5V 8 -25 0 25 50 75 100 125 TC, CASE TEMPERATURE (°C) Figure 5, Typical Threshold Voltage vs Temperature 6V 6 5.5V 4 5V 2 4.5V 0 0.6 -50 VGS=15V, 10V, 7V 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 0.50 0.9 0.30 0.20 0.10 0 10-5 0.7 0.5 Note: 0.3 t1 t2 t 0.1 0.05 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 RC MODEL Junction temp. ( ”C) Power (Watts) 0.0284 0.00155F 0.165 0.00934F 0.307 0.128F Case temperature Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal input - Output Impedance Freq. (MHz) Zin (Ω) ZOL(Ω) 2.0 13.5 27 40 65 21.4 - j 8.7 2.6 - j 7.3 .54 - j 2.9 .22 - j .69 .31 + j 1.65 206 - j 45 68 - j 99 22 - j 64 10.5 - j 44 4.4 - j 27 Zin - Gate shunted with 25Ω IDQ = 100mA ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 300V 050-4921 Rev B 1-2013 0.40 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.60 ARF465A/B(G) Bias + 0 - 6V - C7 L5 C8 + 300V - L4 C6 R1 C4 C9 RF Input L1 L2 C3 DUT C1 R2 C2 L3 RF Output 40.68 MHz Test Circuit C1 - 1000pF 100V chip ATC 700B C2-C5 - Arco 463 Mica trimmer C6-C8 - .01 μF 500V ceramic chip C9 - 2200 pF COG 500 V chip L1 - 4t #20 AWG .25"ID .3"L ~110 nH L2 - 2t #20 AWG .25"ID .3"L ~ 25 nH L3-- 4t #16 AWG .4" ID .5"L ~290 nH L4 -- 25t #24 AWG .35"ID ~2uH L5-- VK200-4B ferrite choke 3uH R1-R2 -- 51 Ohm 0.5W Carbon DUT = ARF465A/B TO-247 Package Outline 4.69 .185 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Source 20.80 (.819) 21.46 (.845) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Device ARF- A ARF- B Gate ------- Drain Source ---- Source Drain ------- Gate 050-4921 Rev B 1-2013 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) HAZARDOUS MATERIAL WARNING: The ceramic portion of the device between leads and mounting flange is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. ARF465A/B(G) Disclaimer: Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp 050-4921 Rev B 1-2013 The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . 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