VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM TC = 25°C 30 32 120 128 32 A A A A A 45 1500 mJ mJ 5 V/ns 360 W -55 ... + 150 150 -55 ... + 150 °C °C °C 300 °C 1.13/10 Nm/lb.in. 6 4 g g l Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. l 30N50Q 32N50Q 30N50Q 32N50Q EAR EAS TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 Symbol Test Conditions VDSS VGS = 0 V, ID = 250 uA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2001 IXYS All rights reserved RDS(on) trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IAR ID25 500 2.5 V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 100 1 µA mA 30N50Q 32N50Q 0.16 0.15 Ω Ω TO-247 AD (IXFH) TO-268 (D3) ( IXFT) G (TAB) S G = Gate S = Source D = Drain TAB = Drain Features l l l l IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l Easy to mount Space savings High power density 98596D (03/01) IXFH 30N50Q IXFT 30N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, Note 1 18 Ciss 28 3950 4925 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 800 pF Crss 210 260 pF td(on) 35 45 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 50 ns td(off) RG = 2 Ω (External), 75 95 ns 20 25 ns 153 190 nC 26 32 nC 85 105 0.35 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK (TO-247) Source-Drain Diode 0.25 Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 trr QRM IRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 nC b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 K/W C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC K/W 32 A 128 A 1.5 V 250 ns µC A 0.75 7.5 1 A A1 A2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol TO-247 AD (IXFH) Outline S 640 Coss IXFH 32N50Q IXFT 32N50Q TO-268 Outline Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFH 30N50Q IXFT 30N50Q Figure 1. Output Characteristics at 25OC 80 50 TJ = 125OC VGS= 9V 8V 7V 40 ID - Amperes 60 ID - Amperes Figure 2. Output Characteristics at 125OC VGS=10V 9V 8V 7V TJ = 25OC 70 IXFH 32N50Q IXFT 32N50Q 6V 50 40 30 6V 30 5V 20 20 10 5V 10 4V 0 0 4 8 12 16 0 20 0 4 8 VDS - Volts 16 20 VDS - Volts Figure 4. RDS(on) normalized to 15A/25OC vs. TJ Figure 3. RDS(on) normalized to 15A/25OC vs. ID 2.8 2.8 VGS = 10V VGS = 10V RDS(ON) - Normalized 2.4 RDS(ON) - Normalized 12 Tj=1250 C 2.0 1.6 Tj=250 C 1.2 10 20 30 40 50 ID = 32A 2.0 ID = 16A 1.6 1.2 0.8 25 0.8 0 2.4 60 50 75 100 125 150 TJ - Degrees C ID - Amperes Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves 40 50 IXF_32N50Q 40 IXF_30N50Q ID - Amperes ID - Amperes 32 24 16 20 TJ = 25oC TJ = 125oC 8 10 0 -50 30 -25 0 25 50 75 TC - Degrees C © 2001 IXYS All rights reserved 100 125 150 0 2 3 4 VGS - Volts 5 6 IXFH 30N50Q IXFT 30N50Q Figure 7. Gate Charge Figure 8. Capacitance Curves 14 10000 Vds=300V ID=16A IG=10mA 10 F = 1MHz Ciss Capacitance - pF 12 VGS - Volts IXFH 32N50Q IXFT 32N50Q 8 6 4 Coss 1000 Crss 2 0 100 0 50 100 150 200 250 0 Gate Charge - nC 100 5 10 15 20 25 VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode VGS= 0V ID - Amperes 80 60 TJ=125OC 40 20 TJ=25OC 0 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 0.40 R(th)JC - K/W 0.20 0.10 0.08 0.06 0.04 0.02 0.01 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025