IXYS IXFT32N50Q

IXFH 32N50Q
IXFT 32N50Q
HiPerFETTM
Power MOSFETs
Q-Class
VDSS
trr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C; pulse width limited by TJM
TC = 25°C
32
128
32
A
A
A
EAR
EAS
TC = 25°C
45
1500
mJ
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
416
W
-55 ... + 150
150
-55 ... + 150
°C
°C
°C
300
°C
1.13/10
Nm/lb.in.
6
4
g
g
TJ
TJM
Tstg
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-268
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
G = Gate
S = Source
z
Test Conditions
VDSS
VGS = 0 V, ID = 250 uA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
© 2004 IXYS All rights reserved
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
500
z
z
z
V
z
2.5
TJ = 25°C
TJ = 125°C
4.5
V
±100
nA
100
1
µA
mA
0.16
Ω
S
(TAB)
D = Drain
TAB = Drain
Features
z
Symbol
RDS(on)
500 V 32 A 0.16 Ω
500 V 32 A 0.16 Ω
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
TL
ID25
IXYS advanced low Qg process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low RDS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS98596E(02/04)
IXFH 32N50Q
IXFT 32N50Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, Note 1
18
Ciss
Coss
28
S
3950 4925
VGS = 0 V, VDS = 25 V, f = 1 MHz
pF
640
800
pF
Crss
210
260
pF
td(on)
35
45
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
42
50
ns
td(off)
RG = 2 Ω (External),
75
95
ns
20
25
ns
153
190
nC
26
32
nC
85
105
0.30
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
(TO-247)
Source-Drain Diode
0.25
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
trr
QRM
IRM
IF = IS, -di/dt = 100 A/µs, VR = 100 V
0.75
7.5
1
Dim.
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
nC
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
K/W
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TO-247 AD (IXFH) Outline
32
A
128
A
1.5
V
250
ns
µC
A
TO-268 Outline
Note 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
IXFH 32N50Q
IXFT 32N50Q
Figure 1. Output Characteristics at 25OC
80
TJ = 125OC
6V
50
40
30
20
30
5V
20
4V
0
4
8
12
16
0
20
0
4
8
VDS - Volts
16
20
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
2.8
2.8
VGS = 10V
VGS = 10V
2.4
RDS(ON) - Normalized
RDS(ON) - Normalized
12
VDS - Volts
Figure 3. RDS(on) normalized to 15A/25OC vs. ID
Tj=1250 C
2.0
1.6
Tj=250 C
1.2
0.8
6V
10
5V
10
0
VGS= 9V
8V
7V
40
ID - Amperes
60
ID - Amperes
50
VGS=10V
9V
8V
7V
TJ = 25OC
70
Figure 2. Output Characteristics at 125OC
0
10
20
30
40
50
2.4
ID = 32A
2.0
1.2
0.8
25
60
ID = 16A
1.6
50
75
100
125
150
TJ - Degrees C
ID - Amperes
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
40
50
IXF_32N50Q
24
40
IXF_30N50Q
ID - Amperes
ID - Amperes
32
16
8
0
-50
30
20
10
-25
0
25
50
75
TC - Degrees C
© 2004 IXYS All rights reserved
100 125 150
0
TJ = 25oC
TJ = 125oC
2
3
4
VGS - Volts
5
6
IXFH 32N50Q
IXFT 32N50Q
Figure 7. Gate Charge
Figure 8. Capacitance Curves
14
10000
Vds=300V
ID=16A
IG=10mA
VGS - Volts
10
F = 1MHz
Ciss
Capacitance - pF
12
8
6
4
Coss
1000
Crss
2
0
0
50
100
150
200
100
250
Gate Charge - nC
0
5
10
15
20
25
VDS - Volts
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
100
VGS= 0V
ID - Amperes
80
60
TJ=125OC
40
20
TJ=25OC
0
0.4
0.6
0.8
1.0
1.2
VSD - Volts
Figure 10. Transient Thermal Resistance
0.40
R(th)JC - K/W
0.20
0.10
0.08
0.06
0.04
0.02
0.01
-3
10-2
IXYS reserves10
the right to change limits, test conditions,
and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
10-1
100
101
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505