Data Sheet 4V Drive Nch + Pch MOSFET TT8M11 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Dimensions (Unit : mm) TSST8 Features 1) Low on-resistance. 2) Low voltage drive(4V drive). 3) Small surface mount package(TSST8). (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol : M11 Application Switching Packaging specifications Type Package Code Basic ordering unit (pieces) TT8M11 Inner circuit Taping TCR 3000 (8) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain (7) ∗2 (6) (5) ∗2 ∗1 (1) ∗1 (2) (3) (4) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage VDSS Gate-source voltage Drain current Source current (Body Diode) Symbol Continuous Pulsed Continuous Pulsed Power dissipation Channel temperature Range of storage temperature VGSS ID IDP *1 Is Isp PD Tch Tstg *1 *2 Limits Tr1 : N-ch Tr2 : P-ch Unit 30 20 3 30 20 2.5 V V A 12 0.8 12 10 0.8 10 A A A 1.25 1.0 150 55 to 150 W / TOTAL W / ELEMENT C C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.09 - Rev.A Data Sheet TT8M11 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V 30 - - V ID=1mA, V GS=0V Drain-source breakdown voltage V(BR)DSS Conditions IDSS - - 1 A VDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance * RDS (on) - 51 71 ID=3A, VGS=10V m ID=3A, VGS=4.5V Forward transfer admittance l Yfs l* Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Zero gate voltage drain current 67 94 78 109 2.7 - - S VDS=10V, ID=3A Ciss - 140 - pF VDS=10V Coss - 55 - pF VGS=0V Crss - 28 - pF f=1MHz td(on)* - 5 - ns VDD 15V, I D=1.5A tr * - 13 - ns VGS=4.5V td(off)* - 20 - ns RL=10 tf * - 3 - ns RG=10 Total gate charge Qg * - 2.5 - nC VDD 10V, I D=3A Gate-source charge Qgs * Qgd * - 0.8 0.6 - nC nC VGS=5V Gate-drain charge Min. Typ. Max. Unit - - 1.2 V Rise time Turn-off delay time Fall time - ID=3A, VGS=4V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Conditions Is=3A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.09 - Rev.A Data Sheet TT8M11 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V 30 - - V ID=1mA, V GS=0V Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current - 1 A VDS=30V, VGS=0V 1.0 - 2.5 V VDS=10V, ID=1mA - 60 84 ID=2.5A, VGS=10V m ID=1.2A, VGS=4.5V IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance RDS (on)* Forward transfer admittance Conditions - 95 130 - 115 160 l Yfs l * 1.8 - - S VDS=10V, ID=2.5A Input capacitance Ciss - 460 - pF VDS=10V Output capacitance Coss - 65 - pF VGS=0V Reverse transfer capacitance Crss - 40 - pF f=1MHz Turn-on delay time td(on)* - 7 - ns VDD 15V, ID=1.2A tr * - 20 - ns VGS=10V td(off)* - 35 - ns RL=12.5 tf * - 14 - ns RG=10 Total gate charge Qg * - 4.8 - nC VDD 15V, ID=2.5A Gate-source charge Qgs * Qgd * - 1.8 1.2 - nC nC VGS=5V Min. Typ. Max. Unit - - 1.2 V Rise time Turn-off delay time Fall time Gate-drain charge ID=1.2A, VGS=4V *Pulsed Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol VSD * Conditions Is=2.5A, VGS=0V *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.09 - Rev.A Data Sheet TT8M11 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 3 3 VGS=2.8V VGS=2.5V Ta=25°C pulsed VGS=10.0V VGS=4.5V VGS=4.0V Drain Current : ID [A] Drain Current : ID [A] VGS=3.0V 2 VGS=4.5V VGS=10.0V VGS=2.5V 1 0 VGS=4.0V 2 VGS=3.0V VGS=2.8V 1 0 0 0.2 0.4 0.6 0.8 1 0 2 Drain-Source Voltage : VDS [V] 6 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current VGS=4.0V VGS=4.5V VGS=10V 100 10 0.01 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 0.01 10 0.1 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=4.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=4V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 10 0.01 1 Drain Current : ID [A] Drain Current : ID [A] Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C pulsed 0.1 1 100 10 0.01 10 0.1 1 10 Drain Current : ID [A] Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 4/10 2011.09 - Rev.A Data Sheet TT8M11 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics 100 10 VDS=10V pulsed 10 1 Drain Currnt : ID [A] Forward Transfer Admittance Yfs [S] VDS=10V pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 0.001 0.001 0.01 0.1 1 10 0.0 0.5 1.0 Drain Current : ID [A] 10 2.5 3.0 3.5 150 VGS=0V pulsed Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Source Current : Is [A] 2.0 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.9 Source Current vs. Source-Drain Voltage Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 ID=1.5A 100 ID=3.0A 50 0 0.01 0.0 0.5 1.0 0 1.5 2 4 6 8 Source-Drain Voltage : VSD [V] Gate-Source Voltage : VGS [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 10 10 1000 VDD≒15V VGS=4.5V RG=10Ω Ta=25°C Pulsed 100 td(off) td(on) 10 Ta=25°C VDD=15V ID=3A Pulsed 8 Gate-Source Voltage : VGS [V] tf Switching Time : t [ns] 1.5 Gate-Source Voltage : VGS [V] 6 4 2 tr 1 0 0.01 0.1 1 10 0 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 Total Gate Charge : Qg [nC] 5/10 2011.09 - Rev.A Data Sheet TT8M11 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 1000 100 Operation in this area is limited by RDS(on) (VGS = 10V) Ta=25°C f=1MHz VGS=0V 100 Drain Current : ID [ A ] Capacitance : C [pF] 10 Ciss PW = 100μs 1 PW = 1ms PW = 10ms 0.1 Coss Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Crss 10 DC Operation 0.01 0.01 0.1 1 10 100 0.1 Drain-Source Voltage : VDS [V] 1 10 100 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=125°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.09 - Rev.A Data Sheet TT8M11 〈Tr.2(Pch)〉 Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) 10 10 Ta=25°C Pulsed 8 VGS=-10V VGS=-6.0V VGS=-4.5V VGS=-4.0V 6 VGS=-3.4V DRAIN CURRENT : -ID[A] DRAIN CURRENT : -ID[A] 8 4 VGS=-3.4V Ta=25°C Pulsed VGS=-10V VGS=-4.5V VGS=-4.0V 6 VGS=-3.0V 4 2 2 VGS=-2.6V VGS=-3.0V 0 0 0 0.2 0.4 0.6 0.8 1 0 2 8 10 1000 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mW] VDS=-10V Pulsed 0.01 VGS=-4.0V VGS=-4.5V VGS=-10V 100 0.001 10 0 1 2 3 4 0.1 1 10 DRAIN-CURRENT : -ID[A] GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 1000 1000 VGS=-10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mW] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mW] 6 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.3 Typical Transfer Characteristics 10 DRAIN CURRENT : -ID[A] 4 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] 100 10 VGS=-4.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 1 10 0.1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 10 DRAIN-CURRENT : -ID[A] DRAIN-CURRENT : -ID[A] 7/10 2011.09 - Rev.A Data Sheet TT8M11 Fig.8 Forward Transfer Admittance vs. Drain Current Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mW] 1000 VGS=-4.0V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 1 VDS=-10V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 10 0.1 DRAIN-CURRENT : -ID[A] 1 Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10 500 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mW] REVERSE DRAIN CURRENT : -Is [A] VGS=0V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 Ta=25°C Pulsed 400 ID=-2.5A 300 ID=-1.2A 200 100 0 0 0.5 1 1.5 0 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics 1000 10 Ta=25°C VDD=-15V VGS=-10V RG=10Ω Pulsed td(off) tf GATE-SOURCE VOLTAGE : -VGS [V] SWITCHING TIME : t [ns] 10 DRAIN-CURRENT : -ID[A] 100 10 tr td(on) 1 8 6 4 Ta=25°C VDD=-15V ID=-2.5A RG=10Ω Pulsed 2 0 0.01 0.1 1 10 0 DRAIN-CURRENT : -ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2 4 6 8 10 TOTAL GATE CHARGE : Qg [nC] 8/10 2011.09 - Rev.A Data Sheet TT8M11 Fig.14 Maximum Safe Operating Area Fig.13 Typical Capacitance vs. Drain-Source Voltage 10000 100 Operation in this area is limited by RDS(on) (VGS = -10V) 10 1000 Drain Current : -ID [ A ] CAPACITANCE : C [pF] Ta=25°C f=1MHz VGS=0V Ciss 100 PW = 100μs 1 PW = 1ms PW = 10ms 0.1 Ta=25°C Single Pulse ： 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Coss Crss DC Operation 0.01 10 0.01 0.1 1 10 0.1 100 1 10 100 Drain-Source Voltage : -VDS [ V ] DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=125°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width ： Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.09 - Rev.A Data Sheet TT8M11 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr tf ton Fig.1-1 Switching Time Measurement Circuit toff Fig.1-2 Switching Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG(Const.) Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform <Tr2(Pch)> Pulse width ID VDS VGS VGS 10% 50% 90% 50% RL 10% D.U.T. VDD RG VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit 10% tf toff Fig.1-2 Switching Waveforms VG ID VDS VGS RL IG(Const.) D.U.T. Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A