Document No.001-88090 Rev. ** ECN # 4039149 Cypress Semiconductor Product Qualification Report QTP# 053301 June 2013 L8C-3R TECHNOLOGY, FAB 4 3.3/3.0/2.5/1.8V High-Accuracy Programmable PLL Die for Crystal Oscillator CY5077 CY22M1SxxLGX CY22M1LxxLGX MoBL(R) UniClock CY22M1 Single Output, Low Power Programmable Clock Generator for Portable Applications CY22U1SxxLGX CY22U1LxxLGX UniClock CY22U1 Single Output, Low Power Programmable Clock Generator CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Zhaomin Ji Principal Reliability Engineer (408) 432-7021 Mira Ben-Tzur Quality Engineering Director (408) 943-2675 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 16 Document No.001-88090 Rev. ** ECN # 4039149 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 042106 7C82877A DDR2 PLL New Device family on New C8Q-3R Technology, Fab4 Jan 05 053301 Qualify L8C-3R Technology Derivative of the C8 Technology at Fab4 using CY5077 Device Sep 06 063209 3 Layer Change to XO-LV Epson (CY5077) on L8C-3R Technology (Wafer Sales Only) Sep 06 064904 8-Layer Improvement Change to XO LV Epson on L8C-3R Technology (Wafer Sales Only) Mar 07 071303 1 Layer Yield Improvement Change to XO LV Epson on L8C-3R Technology (Wafer Sales Only) May 07 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 16 Document No.001-88090 Rev. ** ECN # 4039149 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify L8C-3R Technology Derivative of the C8 Technology at Fab4 using CY5077 Device Marketing Part #: CY5077, CY22M1SxxLGX, CY22M1LxxLGX, CY22U1SxxLGX, CY22U1LxxLGX, Device Description: 3.3/3.0/2.5/1.8V High-Accuracy Programmable PLL Die for Crystal Oscillators Single Output, Low Power Programmable Clock Generator for Portable Applications Cypress Division: Cypress Semiconductor Corporation – Consumer and Computation Division TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 4 Metal Composition: Metal 1: 100A Ti/3,200A Al 0.5% Cu /300A TiW Metal 2: 150A Ti/4,230A Al 0.5% Cu/300A TiW Metal 3: 150A Ti/4,230A Al 0.5% Cu/300A TiW Metal 4: 150A Ti/8,000A Al 0.5% Cu/300A TiW Passivation Type and Materials: 1,000A TeOs / 9,000A Si3N4 Generic Process Technology/Design Rule (µ-drawn): CMOS, 0.13 µm Gate Oxide Material/Thickness (MOS): SiO2 DGOX 32/55A Name/Location of Die Fab (prime) Facility: CMI / Bloomington MN Die Fab Line ID/Wafer Process ID: Fab4, L8C-3R PACKAGE AVAILABILITY PACKAGE NONE ASSEMBLY SITE FACILITY Wafer Sales ONLY Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 16 Document No.001-88090 Rev. ** ECN # 4039149 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: SZ08 8-Lead SOIC Nitto MP8500 NA Oxygen Rating Index: NA Lead Frame Material: Copper Lead Finish, Composition / Thickness: Ni-Pd-Au Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Saw Singulate Die Attach Supplier: Dexter Die Attach Material: QMI 509 Die Attach Method: Epoxy Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 193°C/W Package Cross Section Yes/No: N/A Name/Location of Assembly (prime) facility: CML-RA MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-RA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 16 Document No.001-88090 Rev. ** ECN # 4039149 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F Dynamic Operating Condition, Vcc Max=3.8V, 125°C Dynamic Operating Condition, Vcc Max=2.35V, 150°C P High Temperature Operating Life Dynamic Operating Condition, Vcc Max=3.8V, 125°C P Latent Failure Rate Dynamic Operating Condition, Vcc Max=2.35V, 150°C Long Life Verification Dynamic Operating Condition, Vcc Max=2.35V, 150°C P Low Temperature Operating Life -30C, 4.3V P High Temperature Steady State life 125°C, 3.63V, Vcc Max P High Accelerated Saturation Test (HAST) 130°C, 3.63V, 85%RH P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P Pressure Cooker 121°C, 100%RH, 15 Psig P High Temperature Operating Life Early Failure Rate Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C Electrostatic Discharge Human Body Model (ESD-HBM) 2200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Human Body Model (ESD-HBM) 2200V JESD22, Method A114-B P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Ball Shear JESD22-B116A P Acoustic Microscopy J-STD-020 125C, ± 200mA/300mA In accordance with JEDEC 17 P Latch up Sensitivity Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 16 P Document No.001-88090 Rev. ** ECN # 4039149 RELIABILITY FAILURE RATE SUMMARY Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F Failure Rate High Temperature Operating Life Early Failure Rate1 2,080 Devices 0 N/A N/A 0 PPM High Temperature Operating Life1,2 Long Term Failure Rate 180,000 DHRs 0 0 .7 170 30 FIT Stress/Test 1 2 3 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 16 Document No.001-88090 Rev. ** ECN # 4039149 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # Assy Loc 042106 Duration Samp Rej ACOUSTIC-MSL3 CY68013A (7C681000A) 610434406 TAIWN-G COMP 17 0 CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G COMP 16 0 CY68013A (7C681000A) 610434407/8 TAIWN-G COMP 17 0 4416666 H20549 TAIWN-G COMP 16 0 4416701 CY2SSTU877 (7C87740A) 4417143 STRESS: Failure Mechanism AGE BOND STRENGTH CY68013A (7C681000A) 4416666 610434406 TAIWN-G COMP 5 0 CY68013A (7C682001A) 4416701 610437657 TAIWN-G COMP 5 0 H20549 TAIWN-G COMP 3 0 610437657 TAIWN-G COMP 5 0 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 STRESS: BALL SHEAR CY68013A (7C682001A) STRESS: DYNAMIC LATCH-UP TESTING (6.9V) CY68013A (7C682001A) STRESS: 4416701 4416701 610437657 ESD-CHARGE DEVICE MODEL (500V) CY68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 9 0 CY68013A (7C682000A) 4416666 610437102 TAIWN-G COMP 9 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 9 0 CY68013A (7C682000A) 4416701 610437702 TAIWN-G COMP 9 0 H20549 TAIWN-G COMP 9 0 CY2SSTU877 (7C87740A) 4417143 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2200V CY68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 9 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 9 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 9 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V CY68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 3 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 3 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 16 Document No.001-88090 Rev. ** ECN # 4039149 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # Assy Loc 042106 Duration Samp Rej HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V) CY68013A (7C682005A) 4416701 610438121 TAIWN-G 80 80 0 CY68013A (7C682005A) 4416701 610438121 TAIWN-G 168 80 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max) CY68013A (7C682001A) 4416666 610437607 TAIWN-G 96 499 0 CY68013A (7C682005A) 4417143 610443845 TAIWN-G 96 514 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CY68013A (7C682001A) 4416666 610437607 TAIWN-G 168 200 0 CY68013A (7C682001A) 4416666 610437607 TAIWN-G 1000 194 0 CY68013A (7C682005A) 4417143 610443845 TAIWN-G 168 208 0 CY68013A (7C682005A) 4417143 610443845 TAIWN-G 1000 208 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 2.35V, Vcc Max) CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G 96 276 0 CY2SSTU877 (7C82877A) 4416701 H20501 TAIWN-G 96 126 0 CY2SSTU877 (7C87741A) 4416701 H20500 TAIWN-G 96 89 0 CY2SSTU877 (7C87740A) 4416791B H20536 TAIWN-G 96 169 0 CY2SSTU877 (7C87741A) 4417975 H20583 TAIWN-G 96 304 0 CY2SSTU877 (7C87741A) 4419587 H20650 TAIWN-G 96 500 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CY2SSTU877 (7C87741A) H20592 TAIWN-G 1000 253 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 168 150 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 150 0 STRESS: 4416666B HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE COND 192 HR, 30C/60%RH, MSL3 CY68013A (7C682001A) 4416666 610437607 TAIWN-G 128 47 0 CY68013A (7C682001A) 4416666 610437607 TAIWN-G 256 47 0 CY68013A (7C682000A) 4416701 610437702 TAIWN-G 128 47 0 CY68013A (7C682000A) 4416701 610437702 TAIWN-G 256 45 0 STRESS: Failure Mechanism HI-ACCEL SATURATION TEST (130C, 85%RH, 1.8V), PRE COND 192 HR, 30C/60%RH, MSL3 CY2SSTU877 (7C87741A) 4417975 H20583 TAIWN-G 128 43 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 16 Document No.001-88090 Rev. ** ECN # 4039149 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Loc Duration Samp Rej 4416701 610438121 TAIWN-G 500 80 0 STATIC LATCH-UP TESTING (125C, 5.5V, ±300mA) CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 COMP 3 0 COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, ±300mA) CY68013A (7C682001A) STRESS: Failure Mechanism LOW TEMPERATURE OPERATING LIFE (-30C, 4.3V) CY68013A (7C682005A) STRESS: Assy Lot # 042106 4416666 610437607 TAIWN-G STATIC LATCH-UP TESTING (125C, 7.5V, ±300mA) CY68013A (7C682001A) 4416701 610437657 TAIWN-G STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR, 30C/60%RH, MSL3 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 168 50 0 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 288 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 168 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 288 50 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 168 47 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 288 47 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 168 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 288 45 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 300 50 0 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 500 50 0 CY68013A (7C681000A) 4416666 610434406 TAIWN-G 1000 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 168 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 500 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 1000 50 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 300 46 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 500 45 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 1000 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 300 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 500 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 16 Document No.001-88090 Rev. ** ECN # 4039149 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Assy Loc 042106 Duration Samp Rej Failure Mechanism STRESS: HIGH TEMPERATURE STORAGE, 150C, No bias CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 500 50 0 CY68013A (7C681000A) 4416701 610434407/8 TAIWN-G 1000 50 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 500 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 16 Document No.001-88090 Rev. ** ECN # 4039149 Reliability Test Data QTP #: Device STRESS: Fab Lot # 053301 Assy Lot # Assy Loc Duration Samp Rej ACOUSTIC-MSL3 CY5077 (7C850003A) 4538565 610555083 CML-RA COMP 16 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M COMP 15 0 CY5077 (7C850003A) 4615715 610637084 COMP 15 0 COMP 2 0 COMP 2 0 STRESS: PHIL-M DYNAMIC LATCH-UP, 5.0V CY5077 (7C850003A) STRESS: DYNAMIC LATCH-UP, 6.25V CY5077 (7C850003A) STRESS: ESD-CHARGE DEVICE MODEL (500V) CY5077 (7C850003A) 4538565 610555083 CML-RA COMP 9 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M COMP 9 0 CY5077 (7C850003A) 4615715 610637084 COMP 9 0 STRESS: PHIL-M ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2200V CY5077 (7C850003A) 4538565 610555083 CML-RA COMP 9 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M COMP 9 0 CY5077 (7C850003A) 4615715 610637084 COMP 3 0 STRESS: PHIL-M ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V CY5077 (7C850003A) 4538565 610555083 CML-RA COMP 3 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M COMP 3 0 CY5077 (7C850003A) 4615715 610637084 COMP 3 0 STRESS: PHIL-M HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150C, 2.35V, Vcc Max) CY5077 (7C850003A) 4538565 610555083 CML-RA 48 519 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 48 1061 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M 48 500 0 STRESS: Failure Mechanism HIGH TEMP STEADY STATE LIFE TEST (150C, 2.35V) CY5077 (7C850003A) 4538565 610555083 CML-RA 80 79 0 CY5077 (7C850003A) 4538565 610555083 CML-RA 168 79 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 16 Document No.001-88090 Rev. ** ECN # 4039149 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 053301 Assy Loc Duration Samp Rej HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.35V, Vcc Max) CY5077 (7C850003A) 4538565 610555083 CML-RA 80 120 0 CY5077 (7C850003A) 4538565 610555083 CML-RA 500 120 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 80 120 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 500 120 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M 80 120 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M 500 120 0 1000 119 0 STRESS: LONG LIFE VERIFICATION TEST (150C, 2.35V, Vcc Max) CY5077 (7C850003A) STRESS: 4538565 610555083 CML-RA HI-ACCEL SATURATION TEST (130C, 85%RH, 2.35V), PRE COND 192 HR, 30C/60%RH, MSL3 CY5077 (7C850003A) 4538565 610555083 CML-RA 128 48 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 128 48 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 256 47 0 STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 500 50 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 1000 50 0 STRESS: STATIC LATCH-UP TESTING (125C, 3.0V, ±200mA), 1.8V Option CY5077 (7C850003A) 4538565 610555083 CML-RA COMP 3 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M COMP 3 0 CY5077 (7C850003A) 4615715 610637084 COMP 3 0 COMP 3 0 STRESS: PHIL-M STATIC LATCH-UP TESTING (125C, 6.5V, ±200mA), 3.3V Option CY5077 (7C850003A) STRESS: Failure Mechanism 4538565 610555083 CML-RA STATIC LATCH-UP TESTING (125C, 5.4V, ±200mA), 3.3V Option CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M COMP 3 0 CY5077 (7C850003A) 4615715 610637084 COMP 3 0 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 16 Document No.001-88090 Rev. ** ECN # 4039149 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Lot # 053301 Assy Loc Duration Samp Rej Failure Mechanism TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 CY5077 (7C850003A) 4538565 610555083 CML-RA 300 50 0 CY5077 (7C850003A) 4538565 610555083 CML-RA 500 50 0 CY5077 (7C850003A) 4538565 610555083 CML-RA 1000 50 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 300 50 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 500 50 0 CY5077 (7C850003A) 4550443 61033232/3/915 PHIL-M 1000 50 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M 300 49 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M 500 49 0 CY5077 (7C850003A) 4615715 610637084 PHIL-M 1000 48 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 16 Document No.001-88090 Rev. ** ECN # 4039149 Reliability Test Data QTP #: Device STRESS: Fab Lot # Samp Rej 61065155/3 PHIL-M COMP 9 0 COMP 9 0 COMP 3 0 COMP 3 0 COMP 3 0 Failure Mechanism 4628387 4628387 61065155/3 PHIL-M 4628387 61065155/3 PHIL-M STATIC LATCH-UP TESTING (125C, 3.0V, ±200mA), 1.8V Option CY5077 (7C850003A) STRESS: Duration ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V CY5077 (7C850003A) STRESS: Assy Loc ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2200V CY5077 (7C850003A) STRESS: Assy Lot # ESD-CHARGE DEVICE MODEL (500V) CY5077 (7C850003A) STRESS: 063209 4628387 61065155/3 PHIL-M STATIC LATCH-UP TESTING (125C, 6.5V, ±200mA), 3.3V Option CY5077 (7C850003A) 4628387 61065155/3 PHIL-M Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 16 Document No.001-88090 Rev. ** ECN # 4039149 Reliability Test Data QTP #: Device STRESS: Fab Lot # Assy Loc Duration Results E-TEST YIELD CY5077 (7C850003A) STRESS: Assy Lot # 071303 4644877 COMP COMPARABLE 4644877 COMP COMPARABLE SORT YIELD CY5077 (7C850003A) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 15 of 16 Document No.001-88090 Rev. ** ECN # 4039149 Document History Page Document Title: QTP # 053301 : CY5077,CY22M1SxxLGX, CY22M1LxxLGX, CY22U1SxxLGX, CY22U1LxxLGX, L8C-3R TECHNOLOGY, FAB 4 Document Number: 001-88090 Rev. ECN Orig. of No. Change ** 4039149 ILZ Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-714 and not in spec format. Initiated spec for QTP 053301 and all data from memo# HGA-714 was transferred to qualification report spec template. Deleted package qualification details on package qualification history table. Deleted Cypress reference Spec and replaced with Industry Standards Updated package availability based on current qualified test & assembly site. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 16 of 16