SST200/200A New Product Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY VGS(off) (V) V(BR)GSS Min (V) gfS Min (mS) IDSS Min (mA) –0.3 to –0.9 –25 0.25 0.7 FEATURES BENEFITS APPLICATIONS D D D D D High Quality Low-Level Signal Amplification D Low Signal Loss/System Error D High System Sensitivity D D D D Low Cutoff Voltage: <0.9 V High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA Mini-Microphones Hearing Aids High-Gain, Low-Noise Amplifiers Low-Current, Low-Voltage Battery-Powered Amplifiers D Ultra High Input Impedance Pre-Amplifiers DESCRIPTION The SST200/200A features low leakage, very low noise and low cutoff voltage for use with low-level power supplies. The SST200/200A is excellent for battery powered equipment and low current amplifiers such as mini-microphones. The TO-236 (SOT-23) and SOT-323 (SC-70 3-leads) packages, provide surface-mount capability and is available in tape-and-reel for automated assembly. For applications information see AN102 and AN106. SOT-323 (SC-70 3-LEADS) TO-236 (SOT-23) D 1 D 3 S Document Number: 70976 S-20517—Rev. D, 15-Apr-02 2 1 G 3 S G 2 Top View Top View SST200 (P0)* *Marking Code for TO-236 SST200A (C)* *Marking Code for SOT-323 www.vishay.com 6-1 SST200/200A New Product Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Power Dissipation To-236 (SOT-23)a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW SC-70b . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW Notes a. Derate 2.8 mW/_C above 25_C b. Derate 1.2 mW/_C above 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min V(BR)GSS IG = –1 mA , VDS = 0 V –25 VGS(off) VDS = 15 V, ID = 10 mA –0.3 VDS = 15 V, VGS = 0 V 0.15 Typa Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb IDSS V VGS = –20 V, VDS = 0 V Gate Reverse Current Gate Operating Current IGSS –0.9 –2 –1 TA = 125_C 0.7 mA –100 pA nA IG VDG = 10 V, ID = 0.1 mA –2 Drain Cutoff Current ID(off) VDS = 15 V, VGS = –5 V 2 Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V Common-Source Forward Transconductance gfs VDS = 15 V, VGS = 0 V f = 1 kHz 0.7 mS Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en pA Dynamic 4.5 VDS = 15 V, VGS = 0 V f = 1 MHz VDS = 10 V, VGS = 0 V f = 1 kHz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. www.vishay.com 6-2 0.25 pF 1.3 6 nV⁄ √Hz NPA Document Number: 70976 S-20517—Rev. D, 15-Apr-02 SST200/200A New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Gate Leakage Current 2.0 1.0 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 1.6 1.4 0.7 1.2 0.6 gfs 0.5 1.0 0.4 0.8 0.3 0.6 IDSS 0.2 0.4 0.1 0.2 0.0 0.0 ID = 100 mA 1 nA IG – Gate Leakage (A) 0.8 0.4 0.6 0.8 TA = 125_C IGSS @ 125_C 100 pA ID = 500 mA 10 pA ID = 100 mA TA = 25_C 1 pA IGSS @ 25_C 0.1 pA 0 0.2 IG @ ID = 500 mA 1.8 gfs – Forward Transconductance (µS) IDSS – Saturation Drain Current (mA) 0.9 10 nA 1.0 0 15 VGS(off) – Gate-Source Cutoff Voltage (V) VDG – Drain-Gate Voltage (V) Output Characteristics Transfer Characteristics 400 500 VGS(off) = –0.7 V VGS(off) = –0.7 V VGS = 0 V 360 VDS = 10 V 400 ID – Drain Current (mA) ID – Drain Current (mA) 30 –0.1 V 240 –0.2 V 160 –0.3 V 80 TA = –55_C 300 25_C 200 125_C 100 –0.4 V –0.5 V 0 0 0 8 4 12 16 0 20 –0.1 VDS – Drain-Source Voltage (V) –0.2 –0.3 –0.4 –0.5 VGS – Gate-Source Voltage (V) Transconductance vs. Gate-Source Voltage 1.5 gfs – Forward Transconductance (mS) VGS(off) = –0.7 V VDS = 10 V f = 1 kHz 1.2 TA = –55_C 25_C 0.9 0.6 125_C 0.3 0 0 –0.1 –0.2 –0.3 –0.4 –0.5 VGS – Gate-Source Voltage (V) Document Number: 70976 S-20517—Rev. D, 15-Apr-02 www.vishay.com 6-3 SST200/200A New Product Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Circuit Voltage Gain vs. Drain Current On-Resistance vs. Drain Current 2000 160 g fs R L AV + 1 ) R g L os 120 RL + rDS(on) – Drain-Source On-Resistance ( Ω ) AV – Voltage Gain 200 Assume VDD = 15 V, VDS = 5 V 10 V ID 80 VGS(off) = –0.7 V –1.5 V 40 0 VGS(off) = –0.7 V 1200 800 –1.5 V 400 0 0.01 0.1 1 0.01 Common-Source Input Capacitance vs. Gate-Source Voltage Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 5 Crss – Reverse Feedback Capacitance (pF) 8 6 VDS = 0 V 4 10 V 2 0 f = 1 MHz 4 3 VDS = 0 V 2 1 10 V 0 0 –4 –8 –12 –16 –20 0 VGS – Gate-Source Voltage (V) –8 –12 –16 –20 Output Characteristics Equivalent Input Noise Voltage vs. Frequency 300 VGS(off) = –0.7 V VDS = 10 V VGS = 0 V 240 16 ID – Drain Current (µA) Hz –4 VGS – Gate-Source Voltage (V) 20 en – Noise Voltage nV / 1 ID – Drain Current (mA) f = 1 MHz ID @ 100 mA 12 8 VGS = 0 V –0.1 180 –0.2 120 –0.3 –0.5 60 4 –0.4 0 0 10 100 1k f – Frequency (Hz) www.vishay.com 6-4 0.1 ID – Drain Current (mA) 10 C iss – Input Capacitance (pF) 1600 10 k 100 k 0 0.1 0.2 0.3 0.4 0.5 VDS – Drain-Source Voltage (V) Document Number: 70976 S-20517—Rev. D, 15-Apr-02