VISHAY SI4427DY

Si4427DY
New Product
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
VDS (V)
–30
30
rDS(on) ()
ID (A)
0.0105 @ VGS = –10 V
–13.3
0.0125 @ VGS = –4.5 V
–12.2
0.0195 @ VGS = –2.5 V
–9.8
S S S
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
D D D D
P-Channel MOSFET
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
–30
Gate-Source Voltage
VGS
12
Continuous Drain Current (TJ = 150C)
150 C)a
TA = 25C
V
–9.4
–13.3
ID
TA = 70C
Pulsed Drain Current
–10.7
–7.5
IDM
continuous Source Current (Diode Conduction)a
IS
TA = 25C
Maximum Power Dissipationa
Unit
TA = 70C
Operating Junction and Storage Temperature Range
PD
A
–50
–2.5
–1.3
3.0
1.5
1.9
0.9
W
TJ, Tstg
C
–55 to 150
Parameter
Maximum Junction-to-Ambienta
Symbol
t 10 sec
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJA
RthJF
Typical
Maximum
32
42
68
85
15
18
Unit
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71308
S-01828—Rev. A, 21-Aug-00
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1
Si4427DY
New Product
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = –250 mA
–0.60
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
Voltagea
"100
VDS = –24 V, VGS = 0 V
–1
VDS = –24 V, VGS = 0 V, TJ = 55C
–5
VDS v –5 V, VGS = –10 V
nA
mA
–50
A
VGS = –10 V, ID = –13.3 A
0.0086
0.0105
VGS = –4.5 V, ID = –12.2 A
0.0105
0.0125
VGS = –2.5 V, ID = –9.8 A
0.0165
0.0195
gfs
VDS = –15 V, ID = –13.3 A
40
VSD
IS = –2.5 A, VGS = 0 V
–0.8
–1.2
47
70
rDS(on)
Forward Transconductancea
Diode Forward
VDS = 0 V, VGS = "12 V
ID(on)
a
D i S
Drain-Source
On-State
O S
Resistance
R i
V
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
8.3
Turn-On Delay Time
td(on)
16
tr
12
20
220
330
70
110
50
80
Rise Time
Turn-Off Delay Time
VDS = –15
15 V
V, VGS = –4.5
4 5 V,
V ID = –13.3
13 3 A
VDD = –15
15 V
V,, RL = 15 W
ID ^ –1
1 A,
A VGEN = –10
10 V
V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
C
20
IF = –2.5 A, di/dt = 100 A/ms
25
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Output Characteristics
Transfer Characteristics
50
50
VGS = 10 thru 3 V
40
I D – Drain Current (A)
I D – Drain Current (A)
40
30
20
10
30
20
TC = 125C
10
2V
25C
0
0
1
2
3
4
VDS – Drain-to-Source Voltage (V)
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2
–55C
0
5
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS – Gate-to-Source Voltage (V)
Document Number: 71308
S-01828—Rev. A, 21-Aug-00
Si4427DY
New Product
Vishay Siliconix
Capacitance
9000
0.025
7500
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
On-Resistance vs. Drain Current
0.030
VGS = 2.5 V
0.020
0.015
VGS = 4.5 V
0.010
6000
4500
3000
Coss
VGS = 10 V
0.005
Ciss
1500
0
Crss
0
0
10
20
30
40
50
0
6
ID – Drain Current (A)
24
30
On-Resistance vs. Junction Temperature
Gate Charge
1.6
VDS = 15 V
ID = 13.3 A
r DS(on) – On-Resistance ()
(Normalized)
V GS – Gate-to-Source Voltage (V)
18
VDS – Drain-to-Source Voltage (V)
10
8
6
4
2
VGS = 10 V
ID = 13.3 A
1.4
1.2
1.0
0.8
0
0
20
40
60
80
100
0.6
–50
120
–25
0
Qg – Total Gate Charge (nC)
25
50
75
100
125
150
TJ – Junction Temperature (C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.030
r DS(on) – On-Resistance ( )
50
I S – Source Current (A)
12
TJ = 150C
10
TJ = 25C
0.025
ID = 13.3 A
0.020
0.015
0.010
0.005
0
1
0
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Document Number: 71308
S-01828—Rev. A, 21-Aug-00
1.2
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
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Si4427DY
New Product
Vishay Siliconix
Single Pulse Power, Junction-to-Ambient
50
0.4
40
ID = 250 mA
Power (W)
V GS(th) Variance (V)
Threshold Voltage
0.6
0.2
0.0
–0.2
30
29
10
–0.4
–50
–25
0
25
50
75
100
125
150
0
10–2
10–1
TJ – Temperature (C)
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 68C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
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4
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71308
S-01828—Rev. A, 21-Aug-00