VISHAY SI6954ADQ

Si6954ADQ
New Product
Vishay Siliconix
N-Channel 2.5-V (G-S) Battery Switch
VDS (V)
30
rDS(on) ()
ID (A)
0.053 @ VGS = 10 V
3.4
0.075 @ VGS = 4.5 V
2.9
D1
D2
TSSOP-8
8
D2
7
S2
3
6
S2
4
5
G2
D1
1
S1
2
S1
G1
Si6954ADQ
G1
G2
Top View
S1
S2
N-Channel MOSFET
N-Channel MOSFET
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150C)a
TA = 25C
TA = 70C
Pulsed Drain Current (10 s Pulse Width)
IS
TA = 25C
TA = 70C
Operating Junction and Storage Temperature Range
PD
V
3.4
3.1
2.7
IDM
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
Unit
2.5
A
20
0.83
0.69
1.0
0.83
0.96
0.53
TJ, Tstg
W
C
–55 to 150
Parameter
Maximum Junction-to-Ambienta
Symbol
t 10 sec
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJA
RthJF
Typical
Maximum
90
125
126
150
65
80
Unit
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71130
S-00013—Rev. A, 24-Jan-00
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1
Si6954ADQ
New Product
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 250 A
1
IGSS
VDS = 0 V, VGS = "20 V
100
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 55C
10
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
VDS w 5 V, VGS = 10 V
V
20
nA
A
A
VGS = 10 V, ID = 3.4 A
0.044
0.053
VGS = 4.5 V, ID = 2.9 A
0.062
0.075
Forward Transconductancea
gfs
VDS = 15 V, ID = 3.4 A
10
Diode Forward Voltagea
VSD
IS = 0.83 A, VGS = 0 V
0.8
1.2
8
16
S
V
Dynamicb
Total Gate Charge
Qg
VDS = 10 V,
V VGS = 10 V
V, ID = 3.4
34A
nC
C
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
1.2
Turn-On Delay Time
td(on)
12
20
10
20
23
45
8
15
25
40
Rise Time
tr
Turn-Off Delay Time
VDD = 10 V
V,, RL = 10 ID ^ 1 A,
A VGEN = 10 V
V, RG = 6 td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
1.4
IF = 0.83 A, di/dt = 100 A/s
ns
Notes
a. Pulse test; pulse width v 300 s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Output Characteristics
Transfer Characteristics
20
20
VGS = 10 thru 5 V
16
16
I D – Drain Current (A)
I D – Drain Current (A)
4V
12
8
4
12
8
TC = 125C
4
3V
25C
0
0
0
1
2
3
VDS – Drain-to-Source Voltage (V)
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2
–55C
4
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Document Number: 71130
S-00013—Rev. A, 24-Jan-00
Si6954ADQ
New Product
Vishay Siliconix
On-Resistance vs. Drain Current
Capacitance
600
500
0.12
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
0.15
0.09
VGS = 4.5 V
0.06
VGS = 10 V
Ciss
400
300
200
Coss
0.03
100
0
Crss
0
0
4
8
12
16
20
0
6
ID – Drain Current (A)
Gate Charge
24
30
On-Resistance vs. Junction Temperature
1.8
VDS = 10 V
ID = 3.4 A
r DS(on) – On-Resistance ()
(Normalized)
V GS – Gate-to-Source Voltage (V)
18
VDS – Drain-to-Source Voltage (V)
10
8
6
4
2
VGS = 10 V
ID = 3.4 A
1.6
1.4
1.2
1.0
0.8
0
0
2
4
6
0.6
–50
8
–25
0
Qg – Total Gate Charge (nC)
25
50
75
100
125
150
TJ – Junction Temperature (C)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.15
20
r DS(on) – On-Resistance ( )
TJ = 150C
I S – Source Current (A)
12
10
TJ = 25C
0.12
ID = 3.4 A
0.09
0.06
0.03
0
1
0
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Document Number: 71130
S-00013—Rev. A, 24-Jan-00
1.2
1.4
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
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Si6954ADQ
New Product
Vishay Siliconix
Single Pulse Power, Junction-to-Ambient
30
0.2
25
ID = 250 A
20
–0.0
Power (W)
V GS(th) Variance (V)
Threshold Voltage
0.4
–0.2
15
–0.4
10
–0.6
5
–0.8
–50
–25
0
25
50
75
100
125
150
0
10–3
10–2
10–1
TJ – Temperature (C)
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 126C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
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4
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71130
S-00013—Rev. A, 24-Jan-00