SUP/SUB75N04-05L Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 75a 0.0065 @ VGS = 4.5 V 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N04-05L Top View N-Channel MOSFET SUP75N04-05L ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 125_C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C (TO-220AB and TO-263) Power Dissipation TA = 25_C (TO-263)d Operating Junction and Storage Temperature Range Symbol Limit Unit VGS "20 V 75a ID 55 IDM 240 IAR 75 EAR 280 A mJ 250c PD 3.7 W TJ, Tstg –55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter PCB Mount Junction-to-Ambient Junction-to-Case (TO-263)d Free Air (TO-220AB) 40 RthJA RthJC 62.5 _C/W C/W 0.6 Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 70774 S-05110—Rev. F, 10-Dec-01 www.vishay.com 2-1 SUP/SUB75N04-05L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 40 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea IDSS ID(on) rDS(on) V 3.0 VDS = 40 V, VGS = 0 V, TJ = 125_C 50 VDS = 40 V, VGS = 0 V, TJ = 175_C 250 VDS = 5 V, VGS = 10 V 120 gfs 0.0044 0.0055 VGS = 4.5 V, ID = 75 A 0.0054 0.0065 VGS = 10 V, ID = 30 A, TJ = 125_C VDS = 15 V, ID = 30 A mA m A VGS = 10 V, ID = 75 A 0.0091 VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea nA W 0.011 30 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 700 Total Gate Chargec Qg 130 Gate-Source Chargec Qgs 6400 VGS = 0 V, VDS = 20 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 75 A 1700 pF 200 20 nC Gate-Drain Chargec Qgd 30 Turn-On Delay Timec td(on) 15 30 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDD = 30 V, RL = 0.47 W ID ^ 75 A, VGEN = 10 V, RG = 2.5 W tf 60 120 130 260 70 140 ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 75 Pulsed Current ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 75 A , VGS = 0 V trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/ms m 1.0 1.3 V 65 120 ns 4 8 A 0.13 26 mC Notes a. Pulse test: pulse width v 300 msec, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2-2 Document Number: 70774 S-05110—Rev. F, 10-Dec-01 SUP/SUB75N04-05L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 250 200 I D – Drain Current (A) I D – Drain Current (A) VGS = 10 through 5 V 4V 150 100 200 150 100 TC = 125_C 50 50 3V 25_C –55_C 2V 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) 3 4 5 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 200 0.008 r DS(on) – On-Resistance ( W ) TC = –55_C g fs – Transconductance (S) 2 160 25_C 120 125_C 80 0.006 VGS = 4.5 V VGS = 10 V 0.004 0.002 40 0 0.000 0 20 40 60 80 0 100 20 40 ID – Drain Current (A) 80 100 120 ID – Drain Current (A) Capacitance Gate Charge 20 VGS – Gate-to-Source Voltage (V) 7000 6000 C – Capacitance (pF) 60 Ciss 5000 4000 3000 2000 12 8 4 Coss 1000 VDS = 20 V ID = 75 A 16 Crss 0 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Document Number: 70774 S-05110—Rev. F, 10-Dec-01 60 0 50 100 150 200 250 Qg – Total Gate Charge (nC) www.vishay.com 2-3 SUP/SUB75N04-05L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A 2.0 I S – Source Current (A) r DS(on) – On-Resistance ( W ) (Normalized) 2.5 1.5 1.0 TJ = 150_C TJ = 25_C 10 0.5 0.0 –50 1 –25 0 25 50 75 100 125 150 0 TJ – Junction Temperature (_C) 0.3 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 500 100 I D – Drain Current (A) I D – Drain Current (A) 80 60 40 100 10 ms Limited by rDS(on) 100 ms 1 ms 10 10 ms TC = 25_C Single Pulse 20 0 100 ms dc 1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TA – Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70774 S-05110—Rev. F, 10-Dec-01