Si7458DP New Product Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0045 @ VGS = 4.5 V 22 0.0075 @ VGS = 2.5 V 19 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Synchronous Rectifier–Low Output Voltage D Portable Computer Battery Selection or Protection PowerPakt SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G G 4 D 8 D 7 D 6 S D 5 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 13.4 17.6 IDM Continuous Source Current (Diode Conduction)a V 22 ID 10.7 A 50 4.3 1.6 5.2 1.9 3.3 1.2 TJ, Tstg Unit W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 18 23 50 65 1.0 1.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71821 S-20012—Rev. A, 04-Mar-02 www.vishay.com 1 Si7458DP New Product Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS Typ Max Unit 1.4 V VDS = 0 V, VGS = "12 V "100 nA VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 85_C 20 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 4.5 V rDS(on) Forward Transconductancea Diode Forward Voltagea m mA 50 A VGS = 4.5 V, ID = 22 A 0.0035 0.0045 VGS = 2.5 V, ID = 19 A 0.006 0.0075 gfs VDS = 15 V, ID = 22 A 90 VSD IS = 3 A, VGS = 0 V 0.8 1.2 38 50 W S V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 21 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 8.5 Gate-Resistance RG 0.9 td(on) 22 35 tr 22 35 125 190 60 90 60 90 Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 8 IF = 3 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 50 50 VGS = 4.5 thru 2.5 V 40 40 I D – Drain Current (A) I D – Drain Current (A) 2V 30 20 10 30 20 TC = 125_C 10 1.5 V 25_C –55_C 0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS – Gate-to-Source Voltage (V) Document Number: 71821 S-20012—Rev. A, 04-Mar-02 Si7458DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 7000 0.010 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 6000 0.008 VGS = 2.5 V 0.006 VGS = 4.5 V 0.004 Ciss 5000 4000 3000 Coss 2000 0.002 Crss 1000 0.000 0 0 10 20 30 40 50 0 4 ID – Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 22 A 4 r DS(on) – On-Resistance ( W) (Normalized) V GS – Gate-to-Source Voltage (V) 12 VDS – Drain-to-Source Voltage (V) 5 3 2 1 0 0 8 16 24 32 VGS = 10 V ID = 22 A 1.4 1.2 1.0 0.8 0.6 –50 40 –25 0 Qg – Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.020 r DS(on) – On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ – Junction Temperature (_C) 50 I S – Source Current (A) 8 0.015 ID = 22 A 0.010 0.005 0.000 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71821 S-20012—Rev. A, 04-Mar-02 1.2 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7458DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.6 100 0.4 ID = 250 mA 80 Power (W) V GS(th) Variance (V) 0.2 –0.0 –0.2 60 40 –0.4 –0.6 20 –0.8 –1.0 –50 0 –25 0 25 50 75 100 125 150 0.001 0.1 0.01 TJ – Temperature (_C) 10 1 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 68_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71821 S-20012—Rev. A, 04-Mar-02