Si7415DN New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = –10 V –5.7 0.110 @ VGS = –4.5 V –4.4 D TrenchFETr Power MOSFET D New PowerPAKt Package – Low Thermal Resistance, RthJC – Low 1.07-mm Profile D Fast Switching –60 APPLICATIONS D Load Switches D Half-Bridge Motor Drives D High voltage Non–Synchronous Buck Converters PowerPAKt 1212-8 S S 3.30 mm 3.30 mm 1 S 2 S 3 G G 4 D 8 D 7 D 6 D 5 D P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS –60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V –5.7 –3.6 –4.6 –2.9 ID TA = 70_C Pulsed Drain Current IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 70_C Operating Junction and Storage Temperature Range PD A –20 –3.2 –1.3 3.8 1.5 2.0 0.8 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 26 33 65 81 1.9 2.4 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71691 S-04881—Rev. A, 22-Oct-01 www.vishay.com 1 Si7415DN New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –1 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS = 0 V, VGS = "20 V Diode Forward Voltagea "100 VDS = –48 V, VGS = 0 V –1 VDS = –48 V, VGS = 0 V, TJ = 70_C –5 VDS v –5 V, VGS = –10 V rDS(on) Forward Transconductancea V nA m mA –20 A VGS = –10 V, ID = –5.7 A 0.054 0.065 VGS = –4.5 V, ID = –4.4 A 0.090 0.110 gfs VDS = –15 V, ID = –5.7 A 11 VSD IS = –3.2 A, VGS = 0 V –0.8 –1.2 15 25 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = –30 V, VGS = –10 V, ID = –5.7 A 4 nC Gate-Drain Charge Qgd 3.2 Turn-On Delay Time td(on) 12 20 12 20 22 35 16 25 45 90 Rise Time tr Turn-Off Delay Time VDD = –30 V, RL = 30 W ID ^ –1 A, VGEN = –10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = –3.2 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 10 thru 5 V 16 I D – Drain Current (A) I D – Drain Current (A) 16 12 4V 8 4 12 8 TC = 125_C 4 25_C 3V 0 0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 –55_C 5 0 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Document Number: 71691 S-04881—Rev. A, 22-Oct-01 Si7415DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1200 1000 0.16 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 0.20 0.12 VGS = 4.5 V 0.08 VGS = 10 V 0.04 Ciss 800 600 400 Coss 200 0.00 Crss 0 0 4 8 12 16 20 0 10 30 40 50 60 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 1.8 10 VDS = 30 V ID = 5.7 A 8 r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 20 6 4 2 VGS = 10 V ID = 5.7 A 1.6 1.4 1.2 1.0 0.8 0 0 4 8 12 0.6 –50 16 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 20 r DS(on) – On-Resistance ( W ) I S – Source Current (A) TJ = 150_C 10 TJ = 25_C 1 0.0 0.16 ID = 5.7 A 0.12 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71691 S-04881—Rev. A, 22-Oct-01 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7415DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.8 50 ID = 250 mA 40 0.4 Power (W) V GS(th) Variance (V) 0.6 0.2 30 20 0.0 10 –0.2 –0.4 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 TJ – Temperature (_C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 65_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 www.vishay.com 4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Document Number: 71691 S-04881—Rev. A, 22-Oct-01