isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5887 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Speed Switching ·Low Saturation Voltage: VCE(sat)= 0.4V(Max)@ (IC= 7A; IB= 0.35A) ·Complement to Type 2SA2098 B APPLICATIONS ·Relay drivers, lamp drivers, motor drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICM Collector Current-Pulse 20 A Base Current-Continuous 3 A Total Power Dissipation @TC=25℃ 30 IB B PT W Total Power Dissipation @Ta=25℃ 2.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5887 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 50 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.35A 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 0.35A 1.4 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 10 μA hFE DC Current Gain IC= 1A; VCE= 2V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 100 pF Current-Gain—Bandwidth Product IC= 1A; VCE= 10V 300 MHz 50 ns 700 ns 40 ns fT CONDITIONS MIN TYP. B B 180 MAX UNIT 560 Switching times ton Turn-on Time tstg Storage Time tf IC= 5A, IB1= -IB2= 0.25A, VCC= 20V Fall Time isc Website：www.iscsemi.cn 2