TOSHIBA TK19H50C

TK19H50C
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
TK19H50C
Switching Regulator Applications
Unit: mm
Low drain−source ON resistance
: RDS (ON) = 0. 25Ω (typ.)
High forward transfer admittance
: |Yfs| = 14 S (typ.)
: IDSS = 100 µA (max) (VDS = 500 V)
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Low leakage current
Enhancement mode
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
VDSS
500
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate−source voltage
VGSS
±30
V
ID
19
A
Drain current
DC
(Note 1)
IDP
76
A
Drain power dissipation (Tc = 25°C)
Pulse (Note 1)
PD
150
W
Single-pulse avalanche energy
(Note 2)
EAS
968
mJ
Avalanche current
IAR
19
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
1: GATE
2: DRAIN (HEAT SINK)
3: SOURCE
JEDEC
―
JEITA
―
TOSHIBA
Weight: 3.8 g (typ.)
Thermal Characteristics
Characteristic
2-16K1A
2
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
0.833
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
50
°C / W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.56 mH, RG = 25 Ω, IAR = 19 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2005-08-23
TK19H50C
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Gate leakage current
Gate−source breakdown voltage
Drain cutoff current
Test Condition
Min
Typ.
Max
Unit
IGSS
VGS = ±25 V, VDS = 0 V
—
—
±10
µA
V (BR) GSS
IG = ±10 µA, VDS = 0 V
±30
—
—
V
IDSS
VDS = 500 V, VGS = 0 V
—
—
100
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
—
—
V
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 9.5 A
—
0.25
0.30
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 9.5 A
4.0
14
—
S
Input capacitance
Ciss
—
3100
—
Drain−source breakdown voltage
Gate threshold voltage
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
VGS
ID = 9.5A
出力
10 V
0V
ton
RL = 21 Ω
50 Ω
Turn on time
VDS = 25 V, VGS = 0 V, f = 1 MHz
Switching time
Fall time
Turn off time
Total gate charge (gate−source
plus gate−drain)
VDD ∼
− 200 V
Duty <
= 1%, tw = 10 µs
Qg
Gate−source charge
Qgs
Gate−drain (“Miller”) charge
Qgd
20
—
270
—
—
70
—
—
130
—
—
70
—
—
280
—
—
62
—
—
40
—
—
22
—
pF
ns
tf
toff
—
—
VDD ≈ 400 V, VGS = 10 V, ID = 19 A
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
—
—
19
A
Pulse drain reverse current
(Note 1)
IDRP
—
—
—
76
A
Forward voltage (diode)
VDSF
IDR = 19 A, VGS = 0 V
—
—
−1.7
V
Reverse recovery time
trr
1200
—
ns
Qrr
IDR = 19 A, VGS = 0 V
dIDR / dt = 100 A / µs
—
Reverse recovery charge
—
18
—
µC
Marking
TOSHIBA
TK19H50C
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead (Pb)-free package or
lead (Pb)-free finish.
2
2005-08-23
TK19H50C
ID – VDS
10
Common source
Tc = 25°C
Pulse Test
ID – VDS
20
10
6
10
5.5
5.75
(A)
(A)
ID
5.25
6
Drain current
ID
8
5
4
4.5
2
12
5.5
8
5
4
4.5
VGS = 4V
VGS = 4 V
0
0
1
2
3
Drain-source voltage
4
VDS
0
5
0
(V)
20
10
Common source
VDS = 10 V
Pulse Test
VDS (V)
Tc = −55°C
Drain-source voltage
ID (A)
Drain current
25
100
20
Common source
Tc = 25°C
Pulse Test
16
12
8
ID = 19 A
4
9.5
2
4
6
8
VGS
0
10
0
(V)
4
8
12
Gate-source voltage
|Yfs| – ID
16
VGS
20
(V)
RDS (ON) – ID
1.0
RDS (ON) (Ω)
Common source
VDS = 10 V
Pulse Test
Tc = −55°C
Drain-source ON resistance
⎪Yfs⎪
(S)
(V)
4
0
Gate-source voltage
Forward transfer admittance
VDS
50
VDS – VGS
40
100
10
25
1
40
20
60
100
30
Drain-source voltage
ID – VGS
80
0
Common source
Tc = 25°C
Pulse Test
6
16
8
Drain current
8
1
10
Drain current ID
100
(A)
Common source
Tc = 25°C
VGS = 10 V
Pulse Test
0.1
1
10
Drain current ID
3
100
(A)
2005-08-23
TK19H50C
RDS (ON) − Tc
100
0.8
9.5
0.6
Drain-source ON resistance
Common source
Tc = 25°C
Pulse Test
(A)
Common source
VGS = 10 V
Pulse Test
Drain reverse current IDR
RDS (ON) (Ω)
1.0
IDR − VDS
ID = 19A
4
0.4
0.2
10
1
10
5
3
0
40
80
Case temperature
Tc
120
160
0
0.2
(°C)
VGS = 0 V
1
0.4
0.8
0.6
Drain-source voltage
VDS
5
(V)
100
Crss
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
10
Drain-source voltage
2
1
0
−80
100
VDS
3
−40
(V)
0
160
(°C)
500
VDS (V)
(W)
150
Drain-source voltage
PD
Tc
120
Dynamic input / output
characteristics
200
Drain power dissipation
80
Case temperature
PD − Tc
100
50
0
40
0
40
80
120
Case temperature
160
Tc
VDS
400
(°C)
16
200V
300
12
VDD = 100V
8
VGS
Common source
ID = 19 A
100
4
Ta = 25°C
Pulse Test
20
40
Total gate charge
4
400V
200
0
0
200
20
VGS
Capacitance
C
Gate threshold voltage
Coss
4
Vth
(pF)
1000
1
(V)
Common source
VDS = 10 V
ID = 1mA
Pulse Test
Ciss
1
0.1
1.2
Vth − Tc
Capacitance – VDS
10000
10
1.0
(V)
−40
0.1
60
Qg
80
Gate-source voltage
0
−80
0
100
(nC)
2005-08-23
TK19H50C
rth − tw
1
rth (t)/Rth (ch-c)
Normalized transient thermal impedance
10
Duty=0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
0.01
T
SINGLE PULSE
Duty = t/T
Rth (ch-c) = 0.833°C/W
0.001
10μ
100μ
1m
10m
Pulse width
100m
tw
1
EAS – Tch
SAFE OPERATING AREA
1000
(A)
Avalanche energy
100 µs *
ID max (continuous)
10
EAS
ID max (pulse) *
100
ID
(mJ)
1000
Drain current
10
(s)
1 ms *
DC OPEATION
Tc = 25°C
1
※ Single pulse Ta=25℃
0.1
800
600
400
200
0
25
VDSS max
Curves must be derated
linearly with increase in
temperature.
50
75
100
125
Channel temperature (initial) Tch
150
(°C)
0.01
1
10
Drain-source voltage
100
1000
VDS (V)
BVDSS
15 V
IAR
−15 V
VDD
Test circuit
RG = 25 Ω
VDD = 90 V, L = 4.56 mH
5
VDS
Wave form
Ε AS =
⎛
⎞
1
B VDSS
⎟
⋅ L ⋅ I2 ⋅ ⎜
⎜B
⎟
2
−
V
DD ⎠
⎝ VDSS
2005-08-23
TK19H50C
6
2005-08-23