TPC8A02-H ＴOSHIBA Field Effect Transistor with Built-in Schottky Barrier Diode Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS Ⅲ) TPC8A02-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications • Built-in schottky barrier diode Low forward voltage: VDSF = 0.6V(Max.) • High-speed switching. • Small gate charge.: QSW ＝ 11 nC(Typ.) • Low drain-source ON-resistance: RDS (ON) = 4.3 mΩ (typ.) • High forward transfer admittance: |Yfs| = 40 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) 1,2,3 4 5,6,7,8 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 16 Pulse (Note 1) IDP 48 Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single-pulse avalanche energy (Note 3) EAS 166 mJ Avalanche current IAR 16 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.11 mJ Drain current DC A Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C SOURCE，ANODE GATE DRAIN，CATHODE JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Schottky barrier diodes have large-reverse-current-leakage characteristic compared to other rectifier products. This current leakage combined with improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration during design. 1 2006-11-16 TPC8A02-H Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) TPC8A02 H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25Ω , IAR = 16 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year: continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-16 TPC8A02-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 100 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 VGS = 4.5 V, ID = 8 A ⎯ 6.2 8.5 VGS = 10 V, ID = 8 A ⎯ 4.3 5.6 VDS = 10 V, ID = 8 A 20 40 ⎯ ⎯ 1970 ⎯ VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 240 ⎯ ⎯ 950 ⎯ ⎯ 6 ⎯ ⎯ 14 ⎯ Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-on time VGS Total gate charge (gate-source plus gate-drain) toff Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge Qsw V mΩ S pF ns 12 ⎯ ⎯ 26 ⎯ VDD ∼ − 24 V, VGS = 10 V, ID = 16 A ⎯ 34 ⎯ VDD ∼ − 24 V, VGS = 5 V, ID = 16 A ⎯ 19 ⎯ ⎯ 6 ⎯ ⎯ 8.4 ⎯ ⎯ 11 ⎯ Duty < = 1%, tw = 10 µs V VOUT ⎯ tf Turn-off time ID = 8 A 0V ton Switching time Fall time 10 V RL = 1.88Ω Gate threshold voltage 4.7 Ω Drain-source breakdown voltage VDD ∼ − 15 V VDD ∼ − 24 V, VGS = 10 V, ID = 16 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Peak forward current Pulse Forward voltage (diode) (Note 1) Symbol Test Condition Min Typ. Max Unit IFP ⎯ ⎯ ⎯ 48 A IDR = 1.0 A, VGS = 0 V ⎯ -0.45 −0.6 IDR = 16 A, VGS = 0 V ⎯ ⎯ −1.2 VDSF 3 V 2006-11-16 TPC8A02-H ID – VDS 10 Drain current ID (A) 8 16 4 3.6 ID – VDS 50 Common source Ta = 25°C Pulse test 3.5 4.5 6 Drain current ID (A) 20 3.4 5 12 3.3 8 3.2 4 0 VGS = 3 V 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 3.9 3.8 10 40 30 20 3.7 6 3.6 5 3.5 4.5 3.4 VGS = 3.2 V 0 (V) 1 2 Drain-source voltage VDS (V) Drain current ID (A) Ta = −55°C 100 20 25 10 1 2 3 4 Gate-source voltage 5 0.12 ID = 16 A 0.08 8 0.04 4 0 VGS (V) 2 4 6 Gate-source voltage 8 10 VGS (V) RDS (ON) − ID 100 Common source Ta = −55°C Drain-source ON-resistance RDS (ON) (mΩ) (S) Forward transfer admittance |Yfs| Common source Ta = 25°C Pulse test 100 100 25 1 Common source VDS = 10 V Pulse test 0.1 0.1 (V) 0.16 0 6 ⎪Yfs⎪ − ID 10 5 VDS – VGS 30 0 4 0.20 Common source VDS = 10 V Pulse test 40 0 3 Drain-source voltage VDS ID – VGS 50 Common source Ta = 25°C Pulse test 10 0 1.0 4 1 10 Ta = 25°C Pulse test 10 10 1 0.1 100 Drain current ID (A) VGS = 4.5 V 1 10 100 Drain current ID (A) 4 2006-11-16 TPC8A02-H RDS (ON) − Ta IDR − VDS 1000 Common source Pulse test Drain reverse current IDR (A) ID = 4A,8A,16A 8 VGS = 4.5 V ID = 4A,8A,16A 4 VGS = 10 V 0 −80 −40 0 40 Ambient temperature 80 120 Ta 100 5 10 10 VGS = 0 V 1 Common source Ta = 25°C Pulse test 0.1 160 4.5 −0.2 0 (°C) −0.4 Capacitance − VDS Gate threshold voltage Vth (V) (pF) Ciss 1000 Coss Crss 100 10 0.1 1 10 (2) 0.8 0.4 80 40 80 120 Ta 160 (°C) 120 Ambient temperature Ta Common source ID = 16 A Ta = 25°C Pulse test (V) 1.2 40 0 32 Drain-source voltage VDS (1) −40 Dynamic input/output characteristics (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s 1.6 Common source VDS = 10 V ID = 1 mA Pulse test Ambient temperature (V) PD – Ta 2 1 0 −80 100 Drain-source voltage VDS 2 24 12 VDD = 24 V 16 8 8 4 VGS 0 0 160 VDS 10 20 Total gate charge (°C) 5 16 30 Qg VGS (V) Capacitance C −1.0 (V) 3 Common source VGS = 0 V f = 1 MHz Ta = 25°C Drain power dissipation PD (W) −0.8 Vth − Ta 10000 0 0 −0.6 Drain-source voltage VDS Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) 12 0 40 (nC) 2006-11-16 TPC8A02-H rth – tw Transient thermal impedance rth (℃/W) 1000 100 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) (1) 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe operating area 1000 100 Drain current ID (A) ID max (Pulse) * t =1 ms * 10 ms * 10 1 * Single - pulse Ta = 25°C Curves must be derated linearly with increase in VDSS max temperature. 0.1 0.1 1 10 Drain-source voltage VDS 100 (V) 6 2006-11-16 TPC8A02-H IDSS – Tch IDR – VDSF 100000 Pulse test Drain cutoff current IDSS (µA) Drain reverse current IDR (A) 100 VGS = 0 V 10 125 75 Ta = 25°C 1 0.1 0 0.2 0.4 0.6 0.8 Drain-source voltage VDSF Pulse test VGS = 0 V VDS = 10 V VDS = 20 V 10000 VDS = 30 V 1000 VDS = 5 V 100 10 0 1 (V) (typ.) 40 80 Channel temperature 120 160 Tch (°C) Tch – VDS Channel temperature Tch (°C) 160 Pulse test VGS = 0 V 120 80 40 0 0 10 20 30 Drain-source voltage VDS 40 (V) 7 2006-11-16 TPC8A02-H 8 2006-11-16