TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U−MOS III) TPC8022-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications CCFL Inverter Applications z Small footprint due to a small and thin package z High speed switching z Small gate charge : QSW = 3.5 nC (typ.) z Low drain−source ON-resistance: RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance: |Yfs| = 15 S (typ.) z Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) z Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 40 V Drain-gate voltage (RGS = 20 kΩ) VDGR 40 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 7.5 Pulse (Note 1) IDP 30 Drain power dissipation (t = 10 s) (Note 2a) PD 1.9 W Drain power dissipation (t = 10 s) (Note 2b) PD 1.0 W Single-pulse avalanche energy (Note 3) EAS 26 mJ Avalanche current IAR 7.5 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 4) EAR 0.08 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current A JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 TPC8022-H Thermal Characteristics Characteristic Symbol Max Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 65.8 Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 Unit °C/W Marking (Note 5) TPC8022 H Part No. (or abbreviation code) Lot No. (weekly code) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150°C during use. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit : mm) FR-4 25.4 × 25.4 × 0.8 (Unit : mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 7.5 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPC8022-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — ― ±10 µA Drain cutoff current IDSS VDS = 40 V, VGS = 0 V ― ― 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 40 ― ― V (BR) DSX ID = 10 mA, VGS = −20 V 25 ⎯ ⎯ Vth VDS = 10 V, ID = 1 mA 1.1 ― 2.3 RDS (ON) VGS = 4.5 V, ID = 3.8 A ⎯ 27 35 RDS (ON) VGS = 10 V, ID = 3.8 A ― 22 27 Forward transfer admittance |Yfs| VDS = 10 V, ID = 3.8 A 7.5 15 ― Input capacitance Ciss ― 650 ― Reverse transfer capacitance Crss ― 55 ― Output capacitance Coss ― 240 ― ― 3 ― ― 9 ― Gate threshold voltage Drain−source ON-resistance Rise time Turn−on time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ton 4.7 Ω Switching time Fall time tf Turn−off time toff Total gate charge (gate−source plus gate−drain) Qg Gate−source charge Qgs1 Gate−drain (“Miller”) charge Qgd Gate switching charge Qsw ID = 3.8 A VOUT 10 V VGS 0V RL = 5.3 Ω Drain−source breakdown voltage 2 ― ― 18 ― VDD ≈ 32 V, VGS = 10 V, ID = 7.5 A ― 11 ― VDD ≈ 32 V, VGS = 5 V, ID = 7.5 A ― 6.2 ― ― 2.1 ― ― 2.7 ― ― 3.5 ― Duty < = 1%, tw = 10 µs VDD ≈ 32 V, VGS = 10 V, ID = 7.5 A V mΩ S pF ns ― VDD ∼ − 20 V V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP — — — 30 A VDSF IDR = 7.5 A, VGS = 0 V — — −1.2 V 3 2006-11-17 TPC8022-H ID – VDS 10 Drain current ID (A) Common source Ta = 25°C Pulse test 3.8 3.4 6 ID – VDS 3.2 4.5 6 10 4 3.8 3.6 6 5 8 20 Drain current ID (A) 10 3.1 4 3 4 2.9 2.8 2 16 Common source Ta = 25°C Pulse test 5 3.4 4.5 12 3.2 8 3 2.8 4 2.7 VGS = 2.6 V VGS = 2.6 V 0 0 0.2 0.4 0.8 0.6 Drain-source voltage VDS 0 0 1.0 (V) 0.4 0.8 20 15 10 25 0 0 Ta = −55°C 100 5 1 2 4 3 Gate-source voltage 5 0.2 ID = 7.5 A 0.1 3.8 1.9 VGS (V) 2 4 8 6 Gate-source voltage 10 12 VGS (V) RDS (ON) – ID 100 Common source VDS = 10 V Pulse test Ta = −55°C 100 25 1 0.1 0.1 Common source Ta = 25°C Pulse test 0.3 0 0 6 Drain-source ON-resistance RDS (ON) (mΩ) (S) Forward transfer admittance |Yfs| 10 (V) 0.4 |Yfs| – ID 100 2.0 VDS – VGS 0.5 Common source VDS = 10 V Pulse test Drain-source voltage VDS (V) Drain current ID (A) 25 1.6 Drain-source voltage VDS ID – VGS 30 1.2 1 10 4.5 VGS = 10 V 10 Common source Ta = 25°C Pulse test 1 0.1 100 Drain current ID (A) 1 10 100 Drain current ID (A) 4 2006-11-17 TPC8022-H RDS (ON) – Ta IDR – VDS 50 100 Common source Ta = 25°C Pulse test (A) Pulse test 3.8 40 ID = 7.5 A 1.9 Drain reverse current IDR Drain-source ON-resistance RDS (ON) (mΩ) Common source 30 VGS = 4.5 V ID = 7.5 A, 3.8 A, 1.9 A 20 10 V 10 10 −40 0 40 Ambient temperature 80 1 Ta 0.1 0 160 120 3 10 VGS = 0 V 1 0 −80 4.5 −0.2 (°C) −0.4 −0.6 −0.8 −1.0 Drain-source voltage VDS Capacitance – VDS −1.2 (V) Vth – Ta 2.5 10000 Gate threshold voltage Vth (V) Common source f = 1 MHz VGS = 0 V 1000 Ciss Coss 100 Crss 1 10 1.0 Common source 0.5 VDS = 10 V ID = 1 mA Pulse test 0 −80 100 Drain-source voltage VDS 1.5 −40 (V) (V) 40 Drain-source voltage VDS (W) Drain power dissipation PD 50 (2) Device mounted on a glass-epoxy board (b) (Note 2b) 1.6 t = 10 s 1.2 (2) 0.8 0.4 0 0 50 100 Ambient temperature 80 120 Ta 160 (°C) Dynamic input/output characteristics (1) Device mounted on a glass-epoxy board (a) (Note 2a) (1) 40 Ambient temperature PD – Ta 2.0 0 150 Ta (°C) 16 VDS 30 12 16 20 4 VGS 4 8 12 Total gate charge Qg 5 8 VDD = 32 V 8 10 0 0 200 20 Common source ID = 7.5 A Ta = 25°C Pulse test 16 VGS (V) 10 0.1 2.0 Gate-source voltage Capacitance C (pF) Ta = 25°C 0 20 (nC) 2006-11-17 TPC8022-H rth − tw 1000 Transient thermal impedance rth (°C/W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) 100 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area 100 Drain current ID (A) ID max (Pulse)* t =1 ms* 10 10 ms* 1 * Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSSmax 10 Drain-source voltage VDS 100 (V) 6 2006-11-17 TPC8022-H 7 2006-11-17