TOSHIBA TPC8022-H

TPC8022-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U−MOS III)
TPC8022-H
High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Unit: mm
Portable-Equipment Applications
CCFL Inverter Applications
z Small footprint due to a small and thin package
z High speed switching
z Small gate charge : QSW = 3.5 nC (typ.)
z Low drain−source ON-resistance: RDS (ON) = 22 mΩ (typ.)
z High forward transfer admittance: |Yfs| = 15 S (typ.)
z Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
z Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
40
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
40
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
7.5
Pulse
(Note 1)
IDP
30
Drain power dissipation
(t = 10 s)
(Note 2a)
PD
1.9
W
Drain power dissipation
(t = 10 s)
(Note 2b)
PD
1.0
W
Single-pulse avalanche energy
(Note 3)
EAS
26
mJ
Avalanche current
IAR
7.5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 4)
EAR
0.08
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
A
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
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TPC8022-H
Thermal Characteristics
Characteristic
Symbol
Max
Thermal resistance, channel to ambient (t = 10 s)
(Note 2a)
Rth (ch-a)
65.8
Thermal resistance, channel to ambient (t = 10 s)
(Note 2b)
Rth (ch-a)
125
Unit
°C/W
Marking (Note 5)
TPC8022
H
Part No. (or abbreviation code)
Lot No.
(weekly code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: The channel temperature should not exceed 150°C during use.
Note 2:
a)
Device mounted on a glass-epoxy board (a)
b)
Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit : mm)
FR-4
25.4 × 25.4 × 0.8
(Unit : mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 7.5 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on the lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
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2006-11-17
TPC8022-H
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
―
±10
µA
Drain cutoff current
IDSS
VDS = 40 V, VGS = 0 V
―
―
10
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
40
―
―
V (BR) DSX
ID = 10 mA, VGS = −20 V
25
⎯
⎯
Vth
VDS = 10 V, ID = 1 mA
1.1
―
2.3
RDS (ON)
VGS = 4.5 V, ID = 3.8 A
⎯
27
35
RDS (ON)
VGS = 10 V, ID = 3.8 A
―
22
27
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3.8 A
7.5
15
―
Input capacitance
Ciss
―
650
―
Reverse transfer capacitance
Crss
―
55
―
Output capacitance
Coss
―
240
―
―
3
―
―
9
―
Gate threshold voltage
Drain−source ON-resistance
Rise time
Turn−on time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
ton
4.7 Ω
Switching time
Fall time
tf
Turn−off time
toff
Total gate charge (gate−source
plus gate−drain)
Qg
Gate−source charge
Qgs1
Gate−drain (“Miller”) charge
Qgd
Gate switching charge
Qsw
ID = 3.8 A
VOUT
10 V
VGS
0V
RL = 5.3 Ω
Drain−source breakdown voltage
2
―
―
18
―
VDD ≈ 32 V, VGS = 10 V, ID = 7.5 A
―
11
―
VDD ≈ 32 V, VGS = 5 V, ID = 7.5 A
―
6.2
―
―
2.1
―
―
2.7
―
―
3.5
―
Duty <
= 1%, tw = 10 µs
VDD ≈ 32 V, VGS = 10 V, ID = 7.5 A
V
mΩ
S
pF
ns
―
VDD ∼
− 20 V
V
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse
current
Pulse (Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
—
—
—
30
A
VDSF
IDR = 7.5 A, VGS = 0 V
—
—
−1.2
V
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TPC8022-H
ID – VDS
10
Drain current ID (A)
Common source
Ta = 25°C Pulse test
3.8
3.4
6
ID – VDS
3.2
4.5
6
10
4
3.8
3.6
6
5
8
20
Drain current ID (A)
10
3.1
4
3
4
2.9
2.8
2
16
Common source
Ta = 25°C
Pulse test
5
3.4
4.5
12
3.2
8
3
2.8
4
2.7
VGS = 2.6 V
VGS = 2.6 V
0
0
0.2
0.4
0.8
0.6
Drain-source voltage VDS
0
0
1.0
(V)
0.4
0.8
20
15
10
25
0
0
Ta = −55°C
100
5
1
2
4
3
Gate-source voltage
5
0.2
ID = 7.5 A
0.1
3.8
1.9
VGS (V)
2
4
8
6
Gate-source voltage
10
12
VGS (V)
RDS (ON) – ID
100
Common source
VDS = 10 V
Pulse test
Ta = −55°C
100
25
1
0.1
0.1
Common source
Ta = 25°C
Pulse test
0.3
0
0
6
Drain-source ON-resistance
RDS (ON) (mΩ)
(S)
Forward transfer admittance |Yfs|
10
(V)
0.4
|Yfs| – ID
100
2.0
VDS – VGS
0.5
Common source
VDS = 10 V
Pulse test
Drain-source voltage VDS (V)
Drain current ID (A)
25
1.6
Drain-source voltage VDS
ID – VGS
30
1.2
1
10
4.5
VGS = 10 V
10
Common source
Ta = 25°C
Pulse test
1
0.1
100
Drain current ID (A)
1
10
100
Drain current ID (A)
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TPC8022-H
RDS (ON) – Ta
IDR – VDS
50
100
Common source
Ta = 25°C
Pulse test
(A)
Pulse test
3.8
40
ID = 7.5 A
1.9
Drain reverse current IDR
Drain-source ON-resistance
RDS (ON) (mΩ)
Common source
30
VGS = 4.5 V
ID = 7.5 A, 3.8 A, 1.9 A
20
10 V
10
10
−40
0
40
Ambient temperature
80
1
Ta
0.1
0
160
120
3
10
VGS = 0 V
1
0
−80
4.5
−0.2
(°C)
−0.4
−0.6
−0.8
−1.0
Drain-source voltage VDS
Capacitance – VDS
−1.2
(V)
Vth – Ta
2.5
10000
Gate threshold voltage Vth (V)
Common source
f = 1 MHz
VGS = 0 V
1000
Ciss
Coss
100
Crss
1
10
1.0
Common source
0.5
VDS = 10 V
ID = 1 mA
Pulse test
0
−80
100
Drain-source voltage VDS
1.5
−40
(V)
(V)
40
Drain-source voltage VDS
(W)
Drain power dissipation PD
50
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
1.6
t = 10 s
1.2
(2)
0.8
0.4
0
0
50
100
Ambient temperature
80
120
Ta
160
(°C)
Dynamic input/output
characteristics
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(1)
40
Ambient temperature
PD – Ta
2.0
0
150
Ta
(°C)
16
VDS
30
12
16
20
4
VGS
4
8
12
Total gate charge Qg
5
8
VDD = 32 V
8
10
0
0
200
20
Common source
ID = 7.5 A
Ta = 25°C
Pulse test
16
VGS (V)
10
0.1
2.0
Gate-source voltage
Capacitance C
(pF)
Ta = 25°C
0
20
(nC)
2006-11-17
TPC8022-H
rth − tw
1000
Transient thermal impedance
rth (°C/W)
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(1)
100
10
1
Single - pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe operating area
100
Drain current ID
(A)
ID max (Pulse)*
t =1 ms*
10
10 ms*
1
* Single-pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
0.1
1
VDSSmax
10
Drain-source voltage VDS
100
(V)
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TPC8022-H
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