2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3538 Switching Regulator, DC-DC Converter Applications · Low drain-source ON resistance: RDS (ON) = 75 mΩ (typ.) · High forward transfer admittance: |Yfs| = 7.0 S (typ.) · Low leakage current: IDSS = 100 µA (VDS = 500 V) · Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kW) VDGR 500 V Gate-source voltage VGSS ±30 V (Note 1) ID 8 Pulse (Note 1) IDP 32 Drain power dissipation (Tc = 25°C) PD 65 W Single pulse avalanche energy (Note 2) EAS 312 mJ Avalanche current IAR 8 A EAR 6.5 Channel temperature Tch Storage temperature range Tstg DC Drain current Repetitive avalanche energy (Note 3) A JEDEC ― JEITA SC-97 mJ TOSHIBA 2-9F1B 150 °C Weight: 0.74 g (typ.) -55 to 150 °C Thermal Characteristics 4 Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 1.92 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.3 mH, IAR = 8 A, RG = 25 W 1 2 3 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2003-02-14 2SK3538 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Test Condition Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V ¾ ¾ ±10 mA V (BR) GSS IG = ±10 mA, VDS = 0 V ±30 ¾ ¾ V IDSS VDS = 500 V, VS = 0 V ¾ ¾ 100 mA V (BR) DSS ID = 10 mA, VGS = 0 V 500 ¾ ¾ V Vth VDS = 10 V, ID = 1 mA 2.0 ¾ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 4 A ¾ 0.75 0.85 W Forward transfer admittance |Yfs| VDS = 10 V, ID = 4 A 3.5 7.0 ¾ S Input capacitance Ciss ¾ 1300 ¾ Reverse transfer capacitance Crss ¾ 130 ¾ Output capacitance Coss ¾ 400 ¾ ¾ 26 ¾ ¾ 45 ¾ tr Turn-on time ton 50 W Switching time Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd ID = 4 A VGS 10 V 0V pF VOUT RL = 50 W Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ≈ 200 V Duty ≤ 1%, tw = 10 ms VDD ≈ 400 V, VGS = 10 V, ID = 8 A pF ¾ 40 ¾ ¾ 140 ¾ ¾ 30 ¾ ¾ 17 ¾ ¾ 13 ¾ nC Source-Drain Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ¾ ¾ ¾ 8 A (Note 1) IDRP ¾ ¾ ¾ 32 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = 8 A, VGS = 0 V ¾ ¾ -1.7 V Reverse recovery time trr ¾ 1200 ¾ ns Reverse recovery charge Qrr IDR = 8 A, VGS = 0 V, dIDR/dt = 100 A/ms ¾ 10 ¾ mC Marking ※ Lot Number K3538 ※ Type Month (starting from alphabet A) Year (last number of the christian era) 2 2003-02-14 2SK3538 ID – VDS 10 6 10 10 5 4 4.75 4.5 4.25 2 5.5 15 ID Drain current (A) 16 12 Drain current ID 6 Common source Tc = 25°C Pulse test 6 5.25 15 (A) 8 Common source Tc = 25°C Pulse test ID – VDS 20 8 5 4.5 4 VGS = 4 V 0 0 2 4 6 Drain-source voltage 8 VDS VGS = 4 V 0 0 10 (V) 10 20 Drain-source voltage ID – VGS 8 Tc = -55°C 25 100 0 0 2 4 6 Gate-source voltage Common source Tc = 25°C Pulse test 8 8 VGS 6 4 4 2 2 0 0 10 ID = 8 A (V) 4 8 VGS 20 (V) RDS (ON) – ID Common source VDS = 20 V Pulse test Common source Drain-source on resistance RDS (ON) (W) ïYfsï 16 3 30 Tc = -55°C 10 25 100 5 3 Tc = 25°C Pulse test 1 VGS = 10, 15 V 0.5 0.3 0.1 1 0.5 0.3 12 Gate-source voltage ïYfsï – ID (S) (V) VDS Drain-source voltage ID Drain current 12 4 Forward transfer admittance VDS 50 VDS – VGS (A) 16 40 10 Common source VDS = 20 V Pulse test (V) 20 30 1 3 Drain current 10 ID 0.05 0.3 30 (A) 1 3 Drain current 3 10 ID 30 (A) 2003-02-14 2SK3538 IDR – VDS 30 Common source Common source Tc = 25°C VGS = 10 V (A) Pulse test 3 2 ID = 8 A 4 2 1 -40 0 40 80 120 Case temperature Tc 3 1 10 0.3 5 0.1 0 160 3 -0.2 (°C) 1 -0.4 VGS = 0, -1 V -0.6 -0.8 Drain-source voltage VDS Common source Gate threshold voltage Vth (V) Capacitance C (pF) 1000 Ciss 500 300 Coss 100 50 Common source 30 V GS = 0 V f = 1 MHz Tc = 25°C 10 0.1 1 Crss 10 Drain-source voltage 3 2 1 40 80 120 160 (°C) Dynamic input/output characteristics 500 (V) VDS = 10 A ID = 1 mA Drain-source voltage 60 40 20 100 Case temperature Tc 125 400 VDS 20 16 VDS Pulse test Common source ID = 8 A Tc = 25°C Pulse test VGS 80 75 0 Case temperature Tc Common source 50 -40 (V) PD - Tc 25 VDS = 10 V ID = 1 mA Pulse test 4 0 -80 100 VDS 100 (W) (V) 5 3000 Drain-power dissipation PD -1.2 Vth – Tc Capacitance – VDS 5000 0 0 -1.0 300 (°C) 12 VDD = 100 V 200 200 8 400 100 0 0 150 (V) 0 -80 10 Pulse test 4 VGS 10 20 30 40 Gate-source voltage 4 Drain reverse current IDR Drain-source on resistance RDS (ON) (W) RDS (ON) – Tc 5 0 50 Total gate charge Qg (nC) 4 2003-02-14 2SK3538 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.3 0.2 0.1 0.1 0.03 0.05 PDM 0.02 t 0.01 T Single pulse 0.01 Duty = t/T Rth (ch-c) = 1.92°C/W 0.003 10 m 100 m 1m 10 m Pulse width 100 m tw 1 (S) EAS – Tch Safe operating area 100 500 (mJ) ID max (pulsed)* 100 ms* ID max (continuous) Avalanche energy EAS 10 ID (A) 1 ms* Drain current 10 DC operation Tc = 25°C 1 400 300 200 100 0 25 50 0.1 75 100 125 150 Channel temperature (initial) Tch (°C) * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 1 10 Drain-source voltage VDSS max 100 VDS BVDSS 15 V 1000 IAR -15 V (V) VDD Test circuit RG = 25 W VDD = 90 V, L = 8.3 mH 5 VDS Waveform Ε AS = æ ö 1 B VDSS ÷ × L × I2 × ç çB 2 V DD ÷ø è VDSS 2003-02-14 2SK3538 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2003-02-14