2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV) 2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications · Unit: mm Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) · High forward transfer admittance: |Yfs| = 18 S (typ.) · Low leakage current: IDSS = −100 µA (VDS = −250 V) · Enhancement-mode: Vth = −1.5~−3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -250 V Drain-gate voltage (RGS = 20 kW) VDGR -250 V Gate-source voltage VGSS ±20 V (Note 1) ID -2.0 Pulse (t = 1 ms) (Note 1) IDP -4.0 Drain power dissipation PD 20 W JEITA SC-64 Single pulse avalanche energy (Note 2) EAS 180 mJ TOSHIBA 2-7B1B Avalanche current IAR -2.0 A Repetitive avalanche energy (Note 3) EAR 2.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C DC Drain current A JEDEC ― Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = -50 V, Tch = 25°C (initial), L = 75 mH, IAR = -2.0 A, RG = 25 W Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 1 2002-09-11 2SJ610 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA Drain cut-off current IDSS VDS = -250 V, VGS = 0 V ¾ ¾ -100 mA V (BR) DSS ID = -10 mA, VGS = 0 V -250 ¾ ¾ V Vth VDS = -10 V, ID = -1 mA -1.5 ¾ -3.5 V Drain-source ON resistance RDS (ON) VGS = -10 V, ID = -1.0 A ¾ 1.85 2.55 W Forward transfer admittance ïYfsï VDS = -10 V, ID = -1.0 A 0.5 1.8 ¾ S Input capacitance Ciss ¾ 381 ¾ Reverse transfer capacitance Crss ¾ 52 ¾ Output capacitance Coss ¾ 157 ¾ ¾ 5 ¾ ¾ 20 ¾ Drain-source breakdown voltage Gate threshold voltage Rise time VDS = -10 V, VGS = 0 V, f = 1 MHz tr Turn-on time ID = 1.0 A 10 V VGS 0V ton Fall time tf Turn-off time RL = 100 W 50 9 Switching time Duty < = 1%, tw = 10 ms toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VOUT pF ns ¾ 6 ¾ ¾ 36 ¾ ¾ 24 ¾ ¾ 11 ¾ ¾ 13 ¾ VDD ~ - 100 V VDD ~ - -200 V, VGS = -10 V, ID = -2.0 A nC Source-Drain Ratings and Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ¾ ¾ ¾ -2.0 A Pulse drain reverse current IDRP ¾ ¾ ¾ -4.0 A (Note 1) Forward voltage (diode) VDSF IDR = -2.0 A, VGS = 0 V ¾ ¾ 2.0 V Reverse recovery time trr IDR = -2.0 A, VGS = 0 V, ¾ 120 ¾ ns Reverse recovery charge Qrr dIDR/dt = 100 A/ms ¾ 540 ¾ nC Marking J610 ※ ※ Lot Number Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-11 2SJ610 ID – VDS ID – VDS -4.5 -1 VGS = -4 V -0.5 -5.5 -8 -10 -3 -5 ID -5.5 (A) -5 -15 -1.5 -6 Common source Tc = 25°C, Pulse test -15 Drain current Drain current -4 -8 -6 -10 Common source Tc = 25°C, Pulse test ID (A) -2 -2 -4.5 -1 VGS = -4 V 0 -1 0 -2 -3 Drain-source voltage VDS 0 0 -4 -10 -5 (V) Drain-source voltage ID – VGS -10 (V) (V) Common source Tc = 25°C Pulse test -8 VDS -3 Drain-source voltage ID (A) Common source VDS = -10 V Pulse test Drain current VDS VDS – VGS -4 -2 25 -1 0 0 -1 -2 -6 -2 -4 ID = -1 A -2 Tc = -55°C 100 -3 -4 Gate-source voltage VGS -5 0 0 -6 -2 (V) -4 -6 Gate-source voltage ïYfsï – ID -8 VGS -10 (V) RDS (ON) - ID 10 10 Common source 3 Drain-source on resistance RDS (ON) (W) (S) VDS = -10 V 5 Pulse test ïYfsï Common source Forward transfer admittance -20 -15 Tc = -55°C 100 25 1 0.5 0.3 0.1 -0.1 -0.3 -0.5 -3 -1 Drain current ID -5 Tc = 25°C 5 VGS = 10 V Pulse test 3 1 0.5 0.3 0.1 -0.01 -10 (A) -0.03 -0.1 -0.3 Drain current 3 -1 ID -3 -10 (A) 2002-09-11 2SJ610 IDR – VDS -100 (A) 4 Common source VGS = -10 V Pulse test -2 A 3 Drain reverse current IDR Drain-source on resistance RDS (ON) (W) RDS (ON) – Tc 5 ID = -1 A 2 1 Common source Tc = 25°C Pulse test -10 -1 VGS = -10 V -5 V 0 -80 -40 0 40 80 Case temperature Tc 120 0.1 0 160 0.2 (°C) -3 V 0.6 0.4 1.0 VDS -5 Gate threshold voltage Vth (V) Ciss Coss 100 Crss 10 Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 -0.1 -0.3 Common source VDS = -10 V ID = -1 mA Pulse test -4 -3 -2 -1 0 -80 -1 -3 -10 Drain-source voltage -30 VDS 1.4 1.2 (V) Vth – Tc Capacitance – VDS (pF) 0.8 Drain-source voltage 1000 Capacitance C 0, 1 -40 0 40 80 120 Case temperature Tc -100 160 (°C) (V) PD – Tc Dynamic input/output characteristics -30 -300 40 20 10 -200 Pulse test VDS -20 -15 -50 -100 VDD = -200 V -10 -100 -5 (V) VGS -25 Tc = 25°C Gate-source voltage ID = -2 A (V) VDS 30 Drain-source voltage Drain power dissipation PD (W) Common source VGS 0 0 40 80 120 Case temperature Tc 160 0 0 200 (°C) 5 15 25 35 -0 Total gate charge Qg (nC) 4 2002-09-11 2SJ610 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.05 0.02 Single pulse 0.01 PDM t 0.01 T 0.005 Duty = t/T Rth (ch-c) = 6.25°C/W 0.003 0.001 10 m 100 m 1m 10 m 100 m Pulse width tw 1 10 100 (S) EAS – Tch Safe operating area -100 200 (mJ) -50 Avalanche energy EAS -30 -5 ID max (pulsed) * -3 100 ms * 1 ms * Drain current ID (A) -10 DC -1 160 120 80 40 -0.5 -0.3 0 25 50 -0.1 -0.0 100 125 150 * Single nonrepetitive pulse Tc = 25°C -0.0 Curves must be derated linearly 15 V with increase in temperature. -0.0 1 75 Channel temperature (initial) Tch (°C) VDSS max 3 5 10 30 50 Drain-source voltage 100 VDS BVDSS IAR -15 V 300 500 1000 VDD (V) Test circuit VDS Wave form RG = 25 W VDD = -50 V, L = 75 mH 5 2002-09-11 2SJ610 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-09-11 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.