2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV) 2SJ567 Industrial Applications Switching Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm · Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) · High forward transfer admittance: |Yfs| = 2.0 S (typ.) · Low leakage current: IDSS = −100 µA (max) (VDS = −200 V) · Enhancement-model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -200 V Drain-gate voltage (RGS = 20 kW) VDGR -200 V Gate-source voltage VGSS ±20 V DC (Note 1) ID -2.5 Pulse (Note 1) IDP -10 Drain power dissipation (Tc = 25°C) PD 20 W Single pulse avalanche energy (Note 2) EAS 97.5 mJ Avalanche current IAR -2.5 A Repetitive avalanche energy (Note 3) EAR 2.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Drain current A JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = -50 V, Tch = 25°C (initial), L = -25.2 mH, IAR = -2.5 A RG = 25 W, Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC ― JEITA SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 1 2002-08-12 2SJ567 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA Drain cut-off current IDSS VDS = -200 V, VGS = 0 V ¾ ¾ -100 mA ¾ ¾ V Drain-source breakdown voltage V (BR) DSS ID = -10 mA, VGS = 0 V -200 Vth VDS = -10 V, ID = -1 mA -1.5 ¾ -3.5 V Drain-source ON resistance RDS (ON) VGS = -10 V, ID = -1.5 A ¾ 1.6 2.0 W Forward transfer admittance ïYfsï VDS = -10 V, ID = -1.5 A 1.0 2.0 ¾ S Input capacitance Ciss ¾ 410 ¾ Reverse transfer capacitance Crss ¾ 40 ¾ Output capacitance Coss ¾ 145 ¾ ¾ 20 ¾ ¾ 45 ¾ ¾ 15 ¾ ¾ 85 ¾ ¾ 10 ¾ ¾ 6 ¾ ¾ 4 ¾ Gate threshold voltage Rise time VDS = -10 V, VGS = 0 V, f = 1 MHz tr Turn-on time ID = -1.5 A VOUT 0V VGS -10 V ton Fall time 50 9 Switching time tf Turn-off time RL = 66.7 W Duty < = 1%, tw = 10 ms toff Total gate charge (Gate source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“Miller”) charge Qgd pF ns VDD ~ - -100 V VDD ~ - -160 V, VGS = -10 V, ID = -2.5 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ¾ ¾ ¾ -2.5 A (Note 1) IDRP ¾ ¾ ¾ -10 A Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF IDR = -2.5 A, VGS = 0 V ¾ ¾ 2.0 V Reverse recovery time trr IDR = -2.5 A, VGS = 0 V, ¾ 135 ¾ ns Reverse recovery charge Qrr dIDR/dt = 100 A/ms ¾ 0.81 ¾ mC Marking J567 ※ ※ Lot Number Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-08-12 2SJ567 ID – VDS -6 -5 -4.8 Common source Tc = 25°C, Pulse test -6 -10 -10 -8 -4 -15 -1.2 -4.4 -4.2 -0.8 -5.75 -5.5 (A) -4.6 ID ID Drain current -8 -15 (A) -1.6 Common source Tc = 25°C Pulse test ID – VDS -5 Drain current -2.0 VGS = -4 V -0.4 -5.25 -3 -5 -4.8 -2 -4.6 -4.4 -1 -4.2 VGS = -4 V 0 0 -1 -2 -3 Drain-source voltage -4 0 0 -5 (V) VDS -10 -20 Drain-source voltage ID – VGS VDS -50 (V) -10 Common source Common source Tc = -55°C Tc = 25°C -8 Pulse test -4 100 Drain-source voltage ID 25 Drain current VDS (A) (V) VDS = -10 V Pulse test -6 -2 0 0 -2 -4 -6 Gate-source voltage -8 VGS -6 ID = -2.5 A -4 -1.5 -2 0 0 -10 (V) -0.8 -4 -8 ïYfsï – ID VGS -20 (V) RDS (ON) – ID Common source Common source VDS = -10 V Pulse test Tc = 25°C Pulse test Tc = -55°C Drain-source ON resistance RDS (ON) (W) (S) ïYfsï -16 10 25 100 1 0.1 -0.1 -12 Gate-source voltage 10 Forward transfer admittance -40 VDS – VGS -10 -8 -30 -1 Drain current -15 1 0.1 -0.1 -10 ID VGS = -10 V (A) -1 Drain current 3 -10 ID (A) 2002-08-12 2SJ567 RDS (ON) – Tc IDR – VDS -10 6 Common source VGS = -10 V Pulse test Common source -1.2 4 3 Tc = 25°C (A) ID = -1.5 A Drain reverse current IDR Drain-source ON resistance RDS (ON) (W) 5 -1.0 2 1 Pulse test -1 -5 0 -80 -40 0 40 80 Case temperature Tc 120 -0.1 0 160 -3 0.2 (°C) -1 0.4 0.8 VDS 1 (V) Vth – Tc Capacitance – VDS 5 Common source Gate threshold voltage Vth (V) Ciss (pF) 0.6 Drain-source voltage 1000 Capacitance C VGS = 0 V 100 Coss 10 Crss Common source VGS = 0 V f = 1 MHz VDS = 10 V ID = 1 mA 4 Pulse test 3 2 1 0 -80 Tc = 25°C 1 -0.1 -1 -10 Drain-source voltage -40 40 80 Case temperature Tc -100 VDS 0 120 160 (°C) (V) PD – Tc Dynamic input/output characteristics 20 10 0 0 40 80 Case temperature Tc 120 VDS = -40 V -120 -180 -80 -80 -40 0 0 160 (°C) -12 Common source ID = -2.5 A Tc = 25°C -8 Pulse test -4 VGS 4 8 12 16 VGS -16 Gate-source voltage VDS (V) VDS 30 Drain-source voltage Drain power dissipation PD (W) -160 (V) 40 20 Total gate charge Qg (nC) 4 2002-08-12 2SJ567 rth – tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 0.5 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.03 0.02 Single pulse PDM t 0.01 0.01 0.005 0.003 T Duty = t/T Rth (ch-c) = 6.25°C/W 0.001 10 m 100 m 1m 10 m 100 m Pulse width tw 1 10 (S) EAS – Tch Safe operating area -30 100 100 ms* (mJ) ID max (pulse) * -5 1 ms* Drain current ID (A) -3 Avalanche energy EAS -10 -1 -0.5 -0.3 DC operation -0.1 -0.05 -0.03 -0.005 -0.1 80 60 40 20 * Single nonrepetitive pulse Tc = 25°C 0 25 Curves must be derated -0.01 100 VDSS max linearly with increase in 50 100 125 150 Channel temperature Tch (°C) temperature. -0.3 75 -1 -3 -10 Drain-source voltage -30 VDS -100 -300 (V) 15 V BVDSS IAR -15 V VDD Test circuit RG = 25 W VDD = -50 V, L = 25.2 mH 5 VDS Waveform Ε AS = æ ö 1 B VDSS ÷ × L × I2 × ç çB ÷ 2 V VDSS DD è ø 2002-08-12 2SJ567 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-08-12 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.