TOSHIBA 2SJ567

2SJ567
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
2SJ567
Industrial Applications
Switching Applications
Chopper Regulator, DC-DC Converter and
Motor Drive Applications
Unit: mm
·
Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)
·
High forward transfer admittance: |Yfs| = 2.0 S (typ.)
·
Low leakage current: IDSS = −100 µA (max) (VDS = −200 V)
·
Enhancement-model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-200
V
Drain-gate voltage (RGS = 20 kW)
VDGR
-200
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
-2.5
Pulse
(Note 1)
IDP
-10
Drain power dissipation (Tc = 25°C)
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
97.5
mJ
Avalanche current
IAR
-2.5
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Drain current
A
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = -50 V, Tch = 25°C (initial), L = -25.2 mH, IAR = -2.5 A
RG = 25 W,
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1
2002-08-12
2SJ567
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
¾
¾
±10
mA
Drain cut-off current
IDSS
VDS = -200 V, VGS = 0 V
¾
¾
-100
mA
¾
¾
V
Drain-source breakdown voltage
V (BR) DSS
ID = -10 mA, VGS = 0 V
-200
Vth
VDS = -10 V, ID = -1 mA
-1.5
¾
-3.5
V
Drain-source ON resistance
RDS (ON)
VGS = -10 V, ID = -1.5 A
¾
1.6
2.0
W
Forward transfer admittance
ïYfsï
VDS = -10 V, ID = -1.5 A
1.0
2.0
¾
S
Input capacitance
Ciss
¾
410
¾
Reverse transfer capacitance
Crss
¾
40
¾
Output capacitance
Coss
¾
145
¾
¾
20
¾
¾
45
¾
¾
15
¾
¾
85
¾
¾
10
¾
¾
6
¾
¾
4
¾
Gate threshold voltage
Rise time
VDS = -10 V, VGS = 0 V, f = 1 MHz
tr
Turn-on time
ID = -1.5 A VOUT
0V
VGS
-10 V
ton
Fall time
50 9
Switching time
tf
Turn-off time
RL = 66.7 W
Duty <
= 1%, tw = 10 ms
toff
Total gate charge
(Gate source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“Miller”) charge
Qgd
pF
ns
VDD ~
- -100 V
VDD ~
- -160 V, VGS = -10 V,
ID = -2.5 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
(Note 1)
IDR
¾
¾
¾
-2.5
A
(Note 1)
IDRP
¾
¾
¾
-10
A
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
VDSF
IDR = -2.5 A, VGS = 0 V
¾
¾
2.0
V
Reverse recovery time
trr
IDR = -2.5 A, VGS = 0 V,
¾
135
¾
ns
Reverse recovery charge
Qrr
dIDR/dt = 100 A/ms
¾
0.81
¾
mC
Marking
J567
※
※ Lot Number
Type
Month (starting from alphabet A)
Year
(last number of the christian era)
2
2002-08-12
2SJ567
ID – VDS
-6
-5
-4.8
Common source
Tc = 25°C, Pulse test
-6
-10
-10
-8
-4 -15
-1.2
-4.4
-4.2
-0.8
-5.75
-5.5
(A)
-4.6
ID
ID
Drain current
-8
-15
(A)
-1.6
Common source
Tc = 25°C
Pulse test
ID – VDS
-5
Drain current
-2.0
VGS = -4 V
-0.4
-5.25
-3
-5
-4.8
-2
-4.6
-4.4
-1
-4.2
VGS = -4 V
0
0
-1
-2
-3
Drain-source voltage
-4
0
0
-5
(V)
VDS
-10
-20
Drain-source voltage
ID – VGS
VDS
-50
(V)
-10
Common source
Common source
Tc = -55°C
Tc = 25°C
-8
Pulse test
-4
100
Drain-source voltage
ID
25
Drain current
VDS
(A)
(V)
VDS = -10 V
Pulse test
-6
-2
0
0
-2
-4
-6
Gate-source voltage
-8
VGS
-6
ID = -2.5 A
-4
-1.5
-2
0
0
-10
(V)
-0.8
-4
-8
ïYfsï – ID
VGS
-20
(V)
RDS (ON) – ID
Common source
Common source
VDS = -10 V
Pulse test
Tc = 25°C
Pulse test
Tc = -55°C
Drain-source ON resistance
RDS (ON) (W)
(S)
ïYfsï
-16
10
25
100
1
0.1
-0.1
-12
Gate-source voltage
10
Forward transfer admittance
-40
VDS – VGS
-10
-8
-30
-1
Drain current
-15
1
0.1
-0.1
-10
ID
VGS = -10 V
(A)
-1
Drain current
3
-10
ID
(A)
2002-08-12
2SJ567
RDS (ON) – Tc
IDR – VDS
-10
6
Common source
VGS = -10 V
Pulse test
Common source
-1.2
4
3
Tc = 25°C
(A)
ID = -1.5 A
Drain reverse current IDR
Drain-source ON resistance
RDS (ON) (W)
5
-1.0
2
1
Pulse test
-1
-5
0
-80
-40
0
40
80
Case temperature Tc
120
-0.1
0
160
-3
0.2
(°C)
-1
0.4
0.8
VDS
1
(V)
Vth – Tc
Capacitance – VDS
5
Common source
Gate threshold voltage Vth (V)
Ciss
(pF)
0.6
Drain-source voltage
1000
Capacitance C
VGS = 0 V
100
Coss
10
Crss
Common source
VGS = 0 V
f = 1 MHz
VDS = 10 V
ID = 1 mA
4
Pulse test
3
2
1
0
-80
Tc = 25°C
1
-0.1
-1
-10
Drain-source voltage
-40
40
80
Case temperature Tc
-100
VDS
0
120
160
(°C)
(V)
PD – Tc
Dynamic input/output characteristics
20
10
0
0
40
80
Case temperature Tc
120
VDS = -40 V
-120
-180
-80
-80
-40
0
0
160
(°C)
-12
Common source
ID = -2.5 A
Tc = 25°C
-8
Pulse test
-4
VGS
4
8
12
16
VGS
-16
Gate-source voltage
VDS
(V)
VDS
30
Drain-source voltage
Drain power dissipation
PD
(W)
-160
(V)
40
20
Total gate charge Qg (nC)
4
2002-08-12
2SJ567
rth – tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
3
1
0.5
Duty = 0.5
0.3
0.2
0.1
0.1
0.05
0.05
0.03
0.02
Single pulse
PDM
t
0.01
0.01
0.005
0.003
T
Duty = t/T
Rth (ch-c) = 6.25°C/W
0.001
10 m
100 m
1m
10 m
100 m
Pulse width
tw
1
10
(S)
EAS – Tch
Safe operating area
-30
100
100 ms*
(mJ)
ID max (pulse) *
-5
1 ms*
Drain current
ID
(A)
-3
Avalanche energy EAS
-10
-1
-0.5
-0.3
DC
operation
-0.1
-0.05
-0.03
-0.005
-0.1
80
60
40
20
* Single nonrepetitive pulse
Tc = 25°C
0
25
Curves must be derated
-0.01
100
VDSS max
linearly with increase in
50
100
125
150
Channel temperature Tch (°C)
temperature.
-0.3
75
-1
-3
-10
Drain-source voltage
-30
VDS
-100
-300
(V)
15 V
BVDSS
IAR
-15 V
VDD
Test circuit
RG = 25 W
VDD = -50 V, L = 25.2 mH
5
VDS
Waveform
Ε AS =
æ
ö
1
B VDSS
÷
× L × I2 × ç
çB
÷
2
V
VDSS
DD
è
ø
2002-08-12
2SJ567
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-08-12
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