TOSHIBA TLP2601

TLP2601
TOSHIBA Photocoupler
GaAℓAs Ired & Photo−IC
TLP2601
Isolated Line Receiver
Simplex / Multiplex Data Transmission
Computer−Peripheral Interface
Microprocessor System Interface
Digital Isolation For A/D, D/A Conversion
Direct Replacement For HCPL−2601
Unit in mm
The TOSHIBA TLP2601 a photocoupler which combines a GaAℓAs IRed
as the emitter and an integrated high gain, high speed photodetector.
The output of the detector circuit is an open collector, Schottky clamped
transistor.
A Faraday shield integrated on the photodetector chip reduces the effects
of capacitive coupling between the input LED emitter and the high gain
stages of the detector. This provides an effective common mode transient
immunity of 1000V/μs.
•
Input current thresholds: IF = 5mA max.
•
Isolation voltage: 2500Vrms min.
•
Switching speed: 10MBd
•
Common mode transient immunity: 1000V/μs min.
•
Guaranteed performance over temp.: 0°C~70°C
•
UL Recognized: UL1577, file No. E67349
TOSHIBA
Weight: 0.54g
Pin Configuration (top view)
Truth Table
(positive logic)
Input
Enable
Output
H
H
L
L
H
H
H
L
H
L
L
H
11−10C4
1
8
2
7
3
6
5
4
SHIELD
Schematic
IF
2
A 0.01 to 0.1μF bypass capacitor must be
connected between pins 8 and 5 (see Note 1).
VF
ICC
IO
+
8
6
3
VCC
VO
SHIELD
5
IE
GND
7
VE
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2007-10-01
TLP2601
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Input current, low level
IFL
0
⎯
250
μA
Input current, high level
IFH
6.3 (*)
⎯
20
mA
Supply voltage**, output
VCC
4.5
⎯
5.5
V
High level enable voltage
VEH
2.0
⎯
VCC
V
Low level enable voltage
VEL
0
⎯
0.8
V
N
⎯
⎯
8
⎯
Topr
0
⎯
70
°C
Fan out (TTL load)
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
(*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation.
Initial input current threshold value is 5.0mA or less.
**This item denotes operating ranges, not meaning of recommended operating conditions.
Absolute Maximum Ratings (no derating required)
Symbol
Rating
Unit
Forward current
IF
20
mA
Reverse voltage
VR
5
V
Output current
IO
25
mA
Output voltage
VO
−0.5~7
V
VCC
7
V
VE
5.5
V
Po
40
mW
Operating temperature range
Topr
−40~85
°C
Storage temperature range
Tstg
−55~125
°C
Detector
LED
Characteristic
Supply voltage
(1 minute maximum)
Enable input voltage
(not to exceed VCC by more than 500mV)
Output collector power dissipation
Lead solder temperature (10s)
(**)
Isolation voltage
(R.H.≤ 60%,AC 1min.,
(Note 10)
Tsol
BVS
260
°C
2500
Vrms
3540
Vdc
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(**) 1.6mm below seating plane.
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TLP2601
Electrical Characteristics (Ta = 0°C ~70°C unless otherwise noted)
Characteristic
Symbol
Test Condition
VCC = 5.5V, VO = 5.5V
Min.
Typ.
Max.
Unit
⎯
1
250
μA
⎯
0.4
0.6
V
⎯
7
15
mA
⎯
12
19
mA
High level output current
IOH
Low level output voltage
VOL
High level supply current
ICCH
Low level supply current
ICCL
Low level enable current
IEL
VCC = 5.5V, VE = 0.5V
⎯
−1.6
−2.0
mA
High level enable current
IEH
VCC = 5.5V, VE = 2.0V
⎯
−1
⎯
mA
High level enable voltage
VEH
2.0
⎯
⎯
Low level enable voltage
VEL
⎯
⎯
0.8
Input forward voltage
VF
IF = 10mA, Ta = 25℃
⎯
1.65
1.75
V
BVR
IR = 10μA, Ta = 25℃
5
⎯
⎯
V
CIN
VF = 0, f = 1MHz
⎯
45
⎯
pF
IF = 10mA
⎯
−2.0
⎯
mV / °C
II−O
Relative humidity = 45%
Ta=25℃, t = 5 second
(Note 10)
VI−O = 3000Vdc,
⎯
⎯
1
μA
Resistance (input−output)
RI−O
VI−O = 500V, R.H.≤ 60%
(Note 10)
5×10
⎯
Ω
Capacitance (input−output)
CI−O
f = 1MHz,
⎯
pF
IF = 250μA, VE = 2.0V
VCC = 5.5V, IF = 5mA
VE = 2.0V, IOL(sinking) = 13mA
VCC = 5.5V, IF = 0, VE = 0.5V
VCC = 5.5V, IF = 10mA
VE = 0.5V
(Note 11)
V
Input reverse breakdown
voltage
Input capacitance
Input diode temperature
coefficient
Input−output insulation
leakage current
ΔVF/ΔTA
⎯
(Note 10)
⎯
10
10
14
0.6
(**)All typ.values are at VCC = 5V, Ta = 25°C.
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2007-10-01
TLP2601
Switching Characteristics (Ta = 25℃, VCC = 5 V)
Characteristic
Propagation delay time to
high output level
Propagation delay time to
low output level
Symbol
tpHL
tr
Output fall time(90−10%)
tf
enable from VEH to VEL
Propagation delay time of
enable from VEL to VEH
Test Condition
tpLH
Output rise time(10−90%)
Propagation delay time of
Test
Circuit
RL = 350Ω, CL = 15pF
IF = 7.5mA
1
(Note 2), (Note 3),
(Note 4)&(Note 5)
RL = 350Ω, CL = 15pF
tELH
IF = 7.5mA
2
Min.
Typ.
Max.
Unit
―
60
75
ns
―
60
75
ns
―
30
―
ns
―
30
―
ns
―
25
―
ns
―
25
―
ns
1000
10000
―
V/μs
−1000 −10000
―
V/μs
VEH = 3.0V
VEL = 0.5V
tEHL
(Note 6)&(Note 7)
VCM = 400V
Common mode transient
immunity at high output
RL = 350Ω
CMH
VO(min.) = 2V
level
IF = 0mA,
3
(Note 9)
VCM = 400V
Common mode transient
immunity at low output
RL = 350Ω
CML
VO(max.) = 0.8V
level
IF = 7.5mA,
4
(Note 8)
2007-10-01
TLP2601
Test Circuit 1.
5V
Pulse
generator
ZO = 50Ω
tr = 5ns
IF = 7.5mA
Input IF
IF = 3.75mA
tpHL
IF
Monitoring
node
1.5V
VOL
8
VCC
2
7
3
6
4
47Ω
VOH
tpLH
Output VO
1
5
GND
0.1μF
Bypass
tpHL and tpLH
RL
VO
(*)
CL
Output
monitoring
node
(*) CL is approximately 15pF which includes probe and stray wiring capacitance.
Test Circuit 2.
Pulse
generator
ZO = 50 Ω
tr = 5ns
3.0V
Input VE
7.5mA
dc
IF
1.5V
tEHL
VOH
tELH
Output VO
1.5V
Input VE
monitoring node
5V
1
VCC
8
2
7
3
6
4
5
GND
0.1μF
Bypass
tELH and tEHL
(*)
CL
VOL
RL
VO
Output
monitoring
node
(*) CL is approximately 15pF which includes probe and stray wiring capacitance.
Test Circuit 3.
Transient Immunity and Typ. Waveforms.
90%
VCM
10%
10%
90%
tr
tf
IF
0V
A
B
5V
VO
VFF
Switch at A : IF = 0mA
VO
VCC
8
2
7
3
6
4
Pulse gen.
ZO = 50 Ω
GND
5V
0.1μF
Bypass
1
400V
RL
VO
5
VCM
VOL
Switch at B : IF = 5mA
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2007-10-01
TLP2601
ΔVF / ΔTa – IF
IF – V F
-2.6
Forward voltage temperature
coefficient ΔVF /ΔTa (mV/°C)
Ta = 25°C
10
forward current
IF
(mA)
100
1
0.1
1.2
1.4
-2.0
-1.8
-1.6
100
VCC = 5V
IF = 250μA
(V)
Ta = 25°C
High level output current
IOH (μA)
6
RL=350Ω
1kΩ
4kΩ
2
2
30
(mA)
IOH – Ta
VO – IF
1
10
3
Forward current IF
(V)
8
4
1
0.3
1.8
1.6
Forward voltage VF
Output voltage VO
-2.2
-1.4
0.1
0.01
1.0
0
0
-2.4
3
4
Forward current IF
5
50
VCC = 5.5V
30
VO = 5.5V
10
5
3
6
1
(mA)
0
10
20
30
40
50
60
70
Ambient temperature Ta (°C)
VOL – Ta
VO – IF
8
IF = 5mA
RL=350Ω
6
RL=4kΩ
Ta = 70°C
4
0°C
2
0
0
1
2
3
Forward current IF
4
5
VCC = 5.5V
0.5
Low level output voltage
VOL (V)
Output voltage VO
(V)
VCC = 5V
VE = 2V
IOL=16mA
0.4
12.8mA
9.6mA
6.4mA
0.3
6
0.2
(mA)
0
20
40
60
80
Ambient temperature Ta (°C)
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2007-10-01
TLP2601
tpHL, tpLH – IF
tpHL, tpLH – Ta
120
120
tpLH
RL= 4kΩ
RL=4kΩ
tpLH
100
tpLH
80
1kΩ
350Ω
tpLH
tpHL
60
Propagation delay time
tpHL, tpLH (ns)
Propagation delay time
tpHL, tpLH (ns)
100
350Ω
1kΩ
4kΩ
40
tpLH
80
350Ω
60
1kΩ
tpHL
4kΩ
40
Ta = 25°C
20
9
7
11
13
15
Forward current IF
17
VCC = 5 V
20
VCC = 5V
0
5
350Ω
1kΩ
IF = 7.5mA
19
0
0
(mA)
10
20
30
40
50
60
70
60
70
Ambient temperature Ta (°C)
tEHL, tELH – Ta
tr, tf – Ta
320
80
VCC = 5V
IF = 7.5mA
VCC = 5V
70
RL= 4kΩ
tf
280
1kΩ
tf
60
350Ω
tf
40
350Ω
tr
20
0
0
VEH = 3V
RL= 4kΩ
tELH
IF = 7.5mA
60
80
Enable propagation delay time
tEHL, tELH (ns)
Rise, fall time tr, tf
(ns)
300
1kΩ
4kΩ
10
20
30
40
50
60
50
40
1kΩ
tELH
30
350Ω
tELH
350Ω
20
70
tEHL
1kΩ
4kΩ
10
Ambient temperature Ta (°C)
0
0
10
20
30
40
50
Ambient temperature Ta (°C)
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2007-10-01
TLP2601
Notes
1.
The VCC supply voltage to each TLP2601 isolator must be bypassed by a 0.1μF capacitor of larger.This can be
either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected
as close as possible to the package VCC and GND pins of each device.
2.
tpHL
･
Propagation delay is measured from the 3.75mA level on the low to high transition of the input
current pulse to the 1.5V level on the high to low transition of the output voltage pulse.
3.
tpLH
･
Propagation delay is measured from the 3.75mA level on the high to low transition of the input
current pulse to the 1.5V level on the low to high transition of the output voltage pulse.
4.
tf
･
Fall time is measured from the 10% to the 90% levels of the high to low transition on the output
pulse.
5.
tr
･
Rise time is measured from the 90% to 10% levels of the low to high transition on the output
pulse.
6.
tEHL
･
Enable input propagation delay is measured from the 1.5V level on the low to high transition of
the input voltage pulse to the 1.5V level on the high to low transition of the output voltage pulse.
7.
tELH
･
Enable input propagation delay is measured from the 1.5V level on the high to low transition of
the input voltage pulse to the 1.5V level on the low to high transition of the output voltage pulse.
8.
CML
･
The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain
in the low output state (i.e., VOUT < 0.8V).
Measured in volts per microsecond (V / μs).
9.
CMH
･
The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain
in the high state (i.e., VOUT > 2.0V).
Measured in volts per microsecond(V / μs).
Volts/microsecond can be translated to sinusoidal voltages:
V / μs =
(dv CM )
= fCM VCM (p.p.)
dt Max.
Example:
VCM = 318Vpp when fCM = 1MHz using CML and CMH = 1000V / μs data sheet specified
minimum.
10.
･
Device considered a two−terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and
8 shorted together.
11. Enable
input
･
No pull up resistor required as the device has an internal pull up resistor.
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TLP2601
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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2007-10-01