TOSHIBA 2SK3125

2SK3125
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3125
DC-DC Converter, Relay Drive and
Motor Drive Applications
Unit: mm
·
Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.)
·
High forward transfer admittance: |Yfs| = 60 S (typ.)
·
Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)
·
Enhancement-model: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 kW)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
70
Pulse
(Note 1)
IDP
210
Drain power dissipation (Tc = 25°C)
PD
150
W
JEDEC
―
Single pulse avalanche energy
(Note 2)
EAS
955
mJ
JEITA
―
Avalanche current
IAR
70
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Drain current
A
TOSHIBA
2-16H1A
Weight: 3.65 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
Max
Unit
Rth (ch-c)
0.833
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 140 mH, RG = 25 W, IAR = 70 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
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2002-08-23
2SK3125
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
¾
¾
±10
mA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
¾
¾
100
mA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
¾
¾
V
Drain-source breakdown voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
¾
3.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 30 A
¾
5.3
7.0
mW
Forward transfer admittance
ïYfsï
VDS = 10 V, ID = 30 A
30
60
¾
S
Input capacitance
Ciss
¾
4600
¾
Reverse transfer capacitance
Crss
¾
1400
¾
Output capacitance
Coss
¾
2300
¾
¾
25
¾
¾
40
¾
Gate threshold voltage
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
ton
RL = 0.5 W
4.7 9
Turn-ON time
ID = 30 A
VOUT
10 V
VGS
0V
Switching time
Fall time
ns
tf
Turn-OFF time
VDD ~
- 15 V
Duty <
= 1%, tw = 10 ms
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
pF
VDD ~
- 24 V, VGS = 10 V, ID = 70 A
¾
150
¾
¾
425
¾
¾
130
¾
¾
90
¾
¾
40
¾
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
¾
¾
¾
70
A
Pulse drain reverse current
IDRP
¾
¾
¾
210
A
IDR = 70 A, VGS = 0 V
¾
¾
-1.7
V
(Note 1)
Forward voltage (diode)
VDSF
Reverse recovery time
trr
IDR = 70 A, VGS = 0 V,
¾
150
¾
ns
Qrr
dIDR/dt = 50 A/ms
¾
225
¾
nC
Reverse recovery charge
Marking
TOSHIBA
K3125
※
Type
※ Lot Number
Month (starting from alphabet A)
Year
2
(last number of the christian era)
2002-08-23
2SK3125
ID - VDS
100
80
ID - VDS
100
10
Common source
Tc = 25°C
Pulse test
5
4.5
6
Common source
Tc = 25°C
Pulse test
4.5
80 6
4.25
ID
60
4
ID
60
Drain current
40
3.75
Drain current
(A)
8
(A)
5
10
8
40
3.5
20
4
VOU
3.5
20
VGS = 3.25 V
VGS = 3.25 V
0
0
0.2
0.4
0.6
Drain-source voltage
0.8
VDS
0
0
1
1
(V)
2
3
Drain-source voltage
ID - VGS
4
VDS
(V)
VDS
80
Drain-source voltage
Drain current
ID
(A)
100
60
25
20
100
0
0
1
2
Tc = -55°C
Common source
VDS = 10 V
Pulse test
3
4
Gate-source voltage
(V)
VDS - VGS
1.2
40
5
5
VGS
1.0
0.8
0.6
ID = 70 A
0.4
30
0.2
0
0
6
Common source
Tc = 25°C
Pulse test
(V)
15
2
4
6
8
Gate-source voltage
ïYfsï - ID
VGS
10
12
(V)
RDS (ON) - ID
100
100
Drain-source ON resistance
RDS (ON) (mW)
Forward transfer admittance
ïYfsï
(S)
1000
25
Tc = -55°C
100
10
10
VGS = 10, 15 V
Common source
1
1
VDS = 10 V
Pulse test
10
Drain current
100
ID
1
1
1000
(A)
Common source
Tc = 25°C
Pulse test
Drain current
3
100
10
ID
(A)
2002-08-23
2SK3125
RDS (ON) - Tc
IDR - VDS
1000
IDR
12
ID = 15, 30 A
8
70
4
0
-80
-40
0
40
80
Case temperature Tc
120
100
5
3
VGS = 0 V, -1 V
10
1
Common source
Tc = 25°C
Pulse test
1
0
160
0.4
(°C)
0.8
1.2
Drain-source voltage
1.6
VDS
(V)
50
(V)
40
25
Common source
ID = 70 A
Tc = 25°C
Pulse test
20
VDS
4
Drain-source voltage
3
2
1
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
-80
-40
0
40
2.0
Dynamic input/output characteristics
Vth – Tc
5
Gate threshold voltage Vth (V)
10
80
Case temperature Tc
120
VDS
(°C)
15
6
20
10
VDD = 24 V
10
5
VGS
0
0
160
12
30
40
80
120
160
Gate threshold voltage VGS (V)
16
(A)
Common source
VGS = 10 V
Pulse test
Drain reverse current
Drain-source ON resistance
RDS (ON) (W)
20
0
200
Total gate charge Qg (nC)
PD - Tc
Drain power dissipation
PD
(W)
200
150
100
50
0
0
40
80
120
Case temperature Tc
160
200
(°C)
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2002-08-23
2SK3125
rth - tw
Normalized transient thermal impedance
rth (t)/Rth (ch-c)
10
1
Duty = 0.5
0.2
PDM
0.1
0.1
t
0.05
0.02
T
Single pulse
Duty = t/T
Rth (ch-c) = 0.833°C/W
0.01
0.01
10 m
100 m
1m
10 m
Pulse width
10
(S)
EAS – Tch
(mJ)
1000
ID max (pulse) *
ID max
(continuous)
1 ms *
ID
100
Avalanche energy EAS
100 ms *
(A)
tw
1
Safe operating area
1000
Drain current
100 m
DC operation
Tc = 25°C
10
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
1
0.1
1
Drain-source voltage
VDS
600
400
200
0
25
VDSS max
10
800
50
75
100
125
150
Channel temperature (initial) Tch (°C)
100
(V)
15 V
BVDSS
IAR
-15 V
VDD
Test circuit
RG = 25 W
VDD = 25 V、L = 140 mH
5
VDS
Wave form
Ε AS =
æ
ö
1
B VDSS
÷
× L × I2 × ç
çB
÷
2
V
VDSS
DD
è
ø
2002-08-23
2SK3125
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-08-23