2SK3125 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3125 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm · Low drain-source ON resistance: RDS (ON) = 5.3 mΩ (typ.) · High forward transfer admittance: |Yfs| = 60 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 30 V) · Enhancement-model: Vth = 1.5~3.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kW) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 70 Pulse (Note 1) IDP 210 Drain power dissipation (Tc = 25°C) PD 150 W JEDEC ― Single pulse avalanche energy (Note 2) EAS 955 mJ JEITA ― Avalanche current IAR 70 A Repetitive avalanche energy (Note 3) EAR 15 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Drain current A TOSHIBA 2-16H1A Weight: 3.65 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 0.833 °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tch = 25°C, L = 140 mH, RG = 25 W, IAR = 70 A Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-23 2SK3125 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ¾ ¾ 100 mA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ¾ ¾ V Drain-source breakdown voltage Vth VDS = 10 V, ID = 1 mA 1.5 ¾ 3.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 30 A ¾ 5.3 7.0 mW Forward transfer admittance ïYfsï VDS = 10 V, ID = 30 A 30 60 ¾ S Input capacitance Ciss ¾ 4600 ¾ Reverse transfer capacitance Crss ¾ 1400 ¾ Output capacitance Coss ¾ 2300 ¾ ¾ 25 ¾ ¾ 40 ¾ Gate threshold voltage Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ton RL = 0.5 W 4.7 9 Turn-ON time ID = 30 A VOUT 10 V VGS 0V Switching time Fall time ns tf Turn-OFF time VDD ~ - 15 V Duty < = 1%, tw = 10 ms toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd pF VDD ~ - 24 V, VGS = 10 V, ID = 70 A ¾ 150 ¾ ¾ 425 ¾ ¾ 130 ¾ ¾ 90 ¾ ¾ 40 ¾ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ¾ ¾ ¾ 70 A Pulse drain reverse current IDRP ¾ ¾ ¾ 210 A IDR = 70 A, VGS = 0 V ¾ ¾ -1.7 V (Note 1) Forward voltage (diode) VDSF Reverse recovery time trr IDR = 70 A, VGS = 0 V, ¾ 150 ¾ ns Qrr dIDR/dt = 50 A/ms ¾ 225 ¾ nC Reverse recovery charge Marking TOSHIBA K3125 ※ Type ※ Lot Number Month (starting from alphabet A) Year 2 (last number of the christian era) 2002-08-23 2SK3125 ID - VDS 100 80 ID - VDS 100 10 Common source Tc = 25°C Pulse test 5 4.5 6 Common source Tc = 25°C Pulse test 4.5 80 6 4.25 ID 60 4 ID 60 Drain current 40 3.75 Drain current (A) 8 (A) 5 10 8 40 3.5 20 4 VOU 3.5 20 VGS = 3.25 V VGS = 3.25 V 0 0 0.2 0.4 0.6 Drain-source voltage 0.8 VDS 0 0 1 1 (V) 2 3 Drain-source voltage ID - VGS 4 VDS (V) VDS 80 Drain-source voltage Drain current ID (A) 100 60 25 20 100 0 0 1 2 Tc = -55°C Common source VDS = 10 V Pulse test 3 4 Gate-source voltage (V) VDS - VGS 1.2 40 5 5 VGS 1.0 0.8 0.6 ID = 70 A 0.4 30 0.2 0 0 6 Common source Tc = 25°C Pulse test (V) 15 2 4 6 8 Gate-source voltage ïYfsï - ID VGS 10 12 (V) RDS (ON) - ID 100 100 Drain-source ON resistance RDS (ON) (mW) Forward transfer admittance ïYfsï (S) 1000 25 Tc = -55°C 100 10 10 VGS = 10, 15 V Common source 1 1 VDS = 10 V Pulse test 10 Drain current 100 ID 1 1 1000 (A) Common source Tc = 25°C Pulse test Drain current 3 100 10 ID (A) 2002-08-23 2SK3125 RDS (ON) - Tc IDR - VDS 1000 IDR 12 ID = 15, 30 A 8 70 4 0 -80 -40 0 40 80 Case temperature Tc 120 100 5 3 VGS = 0 V, -1 V 10 1 Common source Tc = 25°C Pulse test 1 0 160 0.4 (°C) 0.8 1.2 Drain-source voltage 1.6 VDS (V) 50 (V) 40 25 Common source ID = 70 A Tc = 25°C Pulse test 20 VDS 4 Drain-source voltage 3 2 1 Common source VDS = 10 V ID = 1 mA Pulse test 0 -80 -40 0 40 2.0 Dynamic input/output characteristics Vth – Tc 5 Gate threshold voltage Vth (V) 10 80 Case temperature Tc 120 VDS (°C) 15 6 20 10 VDD = 24 V 10 5 VGS 0 0 160 12 30 40 80 120 160 Gate threshold voltage VGS (V) 16 (A) Common source VGS = 10 V Pulse test Drain reverse current Drain-source ON resistance RDS (ON) (W) 20 0 200 Total gate charge Qg (nC) PD - Tc Drain power dissipation PD (W) 200 150 100 50 0 0 40 80 120 Case temperature Tc 160 200 (°C) 4 2002-08-23 2SK3125 rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 PDM 0.1 0.1 t 0.05 0.02 T Single pulse Duty = t/T Rth (ch-c) = 0.833°C/W 0.01 0.01 10 m 100 m 1m 10 m Pulse width 10 (S) EAS – Tch (mJ) 1000 ID max (pulse) * ID max (continuous) 1 ms * ID 100 Avalanche energy EAS 100 ms * (A) tw 1 Safe operating area 1000 Drain current 100 m DC operation Tc = 25°C 10 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 0.1 1 Drain-source voltage VDS 600 400 200 0 25 VDSS max 10 800 50 75 100 125 150 Channel temperature (initial) Tch (°C) 100 (V) 15 V BVDSS IAR -15 V VDD Test circuit RG = 25 W VDD = 25 V、L = 140 mH 5 VDS Wave form Ε AS = æ ö 1 B VDSS ÷ × L × I2 × ç çB ÷ 2 V VDSS DD è ø 2002-08-23 2SK3125 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-08-23