6N137 TOSHIBA Photocoupler GaAℓAs Ired & Photo IC 6N137 Degital Logic Isolation Tele-Communication Analog Data Equipment Control Unit in mm The TOSHIBA 6N137 consist of a high emitting diode and a one chip photo IC. This unit is 8-lead DIP package. • LSTTL / TTL compatible: 5V Supply • Ultra high speed: 10MBd • Guaranteed performance over temperature: 0°C to 70°C • High isolation voltage: 2500Vrms min. • UL recognized: UL1577, file no. E67349 Truth Table Input Enable Output H H L L H H H L H L L H IF VF TOSHIBA Weight: 0.54g Pin Configurations (top view) ICC IO 8 VCC V 6 O 2 11−10C4 1 8 2 3 7 6 4 5 3 7 IE 5 GND 1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. 5 : GND 6 : Output(Open collector) 7 : Enable 8 : VCC VE 1 2007-10-01 6N137 Absolute Maximum Ratings Characteristic Symbol Rating Unit IF 20 mA IFP 40 mA VR 5 V Output current IO 50 mA Output voltage VO 7 V Supply voltage (1 minute maximum) VCC 7 V Enable input voltage (not to exceed VCC by more than 500mV) VEH 5.5 V LED Forward current Pulse forward current (Note 1) Detector Reverse voltage PO 85 mW Operating temperature range Output collector power dissipation Topr 0~70 °C Storage temperature range Tstg −55~125 °C Tsol 260 °C Lead solder temperature (10 s) (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) 50% duty cycle, 1ms pulse width. (Note 2) Soldering portion of lead: Up to 2mm from the body of the device. Recommended Operating Conditions Characteristic Symbol Min. Max. Unit Input current, low level each channel IFL 0 250 μA Input current, high level each channel IFH 7 20 mA High level enable voltage VEH 2.0 VCC V Low level enable voltage (output high) VEL 0 0.8 V Supply voltage, output* VCC 4.5 5.5 V Fan out (TTL load) N ― 8 ― Operating temperature Ta 0 70 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. *This item denotes operating ranges, not meaning of recommended operating conditions. Precaution Please be careful of the followings. A ceramic capacitor(0.1μF)should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1cm. 2 2007-10-01 6N137 Electrical Characteristics Over Recommended Temperature (Ta = 0~70°C unless otherwise noted) Characteristic Symbol Test Condition Min. (**)Typ. Max. Unit High level output current IOH VCC=5.5V, VO=5.5V IF=250μA, VE = 2.0V ― 1 250 μA Low level output voltage VOL VCC=5.5V, IF=5mA VEH=2.0V IOL(sinking)=13mA ― 0.4 0.6 V High level enable current IEH VCC=5.5V, VE=2.0V ― −1.0 ― mA Low level enable current IEL VCC=5.5V, VE=0.5V ― −1.6 −2.0 mA High level supply current ICCH VCC=5.5V, IF=0, VE=0.5V ― 7 15 mA Low level supply current ICCL VCC=5.5V, IF=10mA VE=0.5V ― 12 18 mA (Note 3) RI−O VI−O=500V, Ta=25°C R.H.≤60% ― 10 ― Ω (Note 3) CI−O f=1MHz, Ta=25°C ― 0.6 ― pF VF IF=10mA, Ta=25°C ― 1.65 1.75 V Input reverse breakdown voltage BVR IR=10μA, Ta=25°C 5 ― ― V Input capacitance CIN VF=0, f=1MHz ― 45 ― pF Current transfer ratio CTR IF=5.0mA, RL=100Ω ― 1000 ― % Resistance (input−output) Capacitance (input−output) Input forward voltage 12 (**) All typical values are at VCC=5V, Ta=25°C (Note 3) Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. 3 2007-10-01 6N137 Switching Characteristics (Ta = 25°C, VCC = 5V) Symbol Test Circuit Propagation delay time to high output level tpLH 1 Propagation delay time to low output level tpHL Output rise−fall time (10−90%) Characteristic Min. Typ. Max. Unit RL=350Ω, CL=15pF IF=7.5mA ― 60 75 ns 1 RL=350Ω, CL=15pF IF=7.5mA ― 60 75 ns tr, tf ― RL=350Ω, CL=15pF IF=7.5mA ― 30 ― ns Propagation delay time of enable from VEH to VEL tELH 2 RL=350Ω, CL=15pF IF=7.5mA VEH=3.0V VEL=0.5V ― 25 ― ns Propagation delay time of enable from VEL to VEH tEHL 2 RL=350Ω, CL=15pF IF=7.5mA VEH=3.0V VEL=0.5V ― 25 ― ns 3 VCM=10V RL=350Ω VO(min.)=2V IF=0mA ― 200 ― V / μs 3 VCM=10V RL=350Ω VO(max.)=0.8V IF=5mA ― −500 ― V / μs Common mode transient immunity at logic high output level Common mode transient Immunity at logic low output level CMH CML Test Condition 4 2007-10-01 6N137 Test Circuit 1. 5V tpHL and tpLH Pulse generator ZO = 50Ω tr = 5ns Input 175mV(IF = 3.75mA) tpHL tpLH Output VO VOH 1.5V IF Monitoring Node VOL 1 VCC 8 2 7 3 6 GND 4 47Ω 350mV(IF = 7.5mA) 0.1μF RL Bypass Output CL 5 VO monitoring node ･ CL is approximately 15pF which includes probe and stray wiring capacitance. Test Circuit 2. tEHL and tELH Input VE Monitoring node Pulse generator ZO = 50Ω tr = 5ns 5V 1 3.0V Input VE 7.5mA dc IF 1.5V tEHL VOH tELH Output VO 1.5V VCC 8 0.1μF 2 7 3 6 4 GND Bypass CL 5 VOL RL VO Output monitoring node ･ CL is approximately 15pF which includes prove and stray wiring capacitance. Test Circuit 3. Transient immunity and typical waveforms 1 90% 10V 10% 90% 10% tr IF A 0V tf 7 3 6 4 VFF Switch at A : IF = 0mA GND 5V 0.1μF Bypass RL VO 5 Pulse gen. ZO = 50Ω. VO 8 2 B 5V VO VCC VCM VOL Switching at B : IF = 5mA 5 2007-10-01 6N137 ΔVF / ΔTa – IF IF – V F -2.6 Forward voltage temperature coefficient ΔVF /Δta (mV / °C ) Ta = 25°C 10 Forward current IF (mA) 100 1 0.1 0.01 1.0 1.2 1.6 1.4 Forward voltage VF -1.6 1 0.3 (mA) VCC = 5.5V 5 VO = 5.5V 3 High level output current IOH (μA) RL = 350Ω 1kΩ 4kΩ 2 1 0.5 0.3 0.1 1 3 2 5 4 IF 6 0 20 8 60 Ta 80 (°C) VO L – Ta IF = 5mA Low level output voltage VOL (V) RL = 350Ω RL = 4kΩ VO 6 VCC = 5.5V 0.5 VCC = 5V Ta = 70°C 4 40 Ambient temperature (mA) VO – IF (V) IF 30 VF = 1V 6 Forward current Output voltage 10 IOH - Ta Ta = 25°C 0°C 2 0 3 10 VO (V) -1.8 Forward current VCC = 5V Output voltage -2.0 (V) 8 0 0 -2.2 -1.4 0.1 1.8 VO – IF 4 -2.4 VE = 2V IOL = 16mA 0.4 12.8mA 9.6mA 6.4mA 0.3 0.2 0 1 2 Forward current 5 4 3 IF 6 0 (mA) 20 40 Ambient temperature 6 60 Ta 80 (°C) 2007-10-01 6N137 tpHL, tpLH - IF tpHL, tpLH - Ta 120 120 tpLH 100 80 tpLH 60 tpHL tpLH 1kΩ 350Ω 350Ω 1kΩ 40 4kΩ Ta = 25°C 20 Propagation delay time (ns) tpHL, tpLH Propagation delay time tpHL, tpLH (ns) 100 0 350Ω 1kΩ 350Ω 60 7 9 11 13 15 IF 17 4kΩ 40 VCC = 5V IF = 7.5mA 0 19 (mA) 10 20 VCC = 5V IF = 7.5mA (ns) 70 RL = 4kΩ tf Rise, fall time tr, tf 280 1kΩ tf 80 60 350Ω tf 40 tr 20 350Ω 1kΩ 4kΩ 10 20 30 40 Ambient temperature 50 40 Ta 60 70 (°C) tEHL,tELH - Ta 80 50 Ta 60 Enable propagation delay time tEHL, tELH (ns) 300 30 Ambient temperature tr, tf – Ta 320 1kΩ tpHL 0 5 tpLH 80 20 VCC = 5V Forward current 0 0 RL = 4kΩ tpLH RL = 4kΩ VCC = 5V VEH = 3V IF = 7.5mA tELH RL = 4kΩ tELH 1kΩ tELH 350Ω 60 50 40 30 350Ω 20 tEHL 70 1kΩ 10 (°C) 0 0 4kΩ 10 20 30 40 Ambient temperature 7 50 Ta 60 70 (°C) 2007-10-01 6N137 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01