Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm (23.4) (4.5) (2.0) Unit Collector-base voltage (Emitter open) VCBO 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V Collector-emitter voltage (Base open) VCEO 600 V Emitter-base voltage (Collector open) VEBO 7 V IB 8 A Collector current IC 20 A Peak collector current * ICP 30 A Collector power dissipation PC 70 W 5˚ 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5˚ 1 2 5.5±0.3 Rating 5˚ 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package (2.0) Symbol 3.3±0.3 Parameter Internal Connection 3.5 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3.0±0.3 5˚ 5˚ (4.0) 2.0±0.2 18.6±0.5 (2.0) Solder Dip ■ Absolute Maximum Ratings TC = 25°C Ta = 25°C (1.2) 26.5±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • High-speed switching: tf < 200 ns • Wide safe operation area Base current 5˚ (10.0) ■ Features φ 3.2±0.1 22.0±0.5 15.5±0.5 C B E Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-base cutoff current (Emitter open) ICBO Conditions Min Typ Max Unit VCB = 1 000 V, IE = 0 50 µA VCB = 1 700 V, IE = 0 1 mA 50 µA 12 Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 Forward current transfer ratio hFE VCE = 5 V, IC = 10 A Collector-emitter saturation voltage VCE(sat) IC = 10 A, IB = 2.5 A 3 V Base-emitter saturation voltage VBE(sat) IC = 10 A, IB = 2.5 A 1.5 V 5 Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz Storage time tstg IC = 10 A, Resistance loaded 3.0 µs IB1 = 2.5 A, IB2 = −5.0 A 0.2 µs Fall time tf 3 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: June 2004 SJD00306BED 1 2SC5905 PC Ta IC VCE 1 0.4 A 6 4 0.2 A 8 Ta = 120°C 4 25°C −40°C 2 0 50 100 150 IB = 0 A 0 2 4 −40°C 0.8 1.2 tf IB(END) 1 000 fH = 32 kHz IC = 10 A L load 800 Ta = 120°C 25°C −40°C 10 600 400 200 1 10−2 102 10 0.4 Base-emitter voltage VBE (V) Fall time tf (ns) Forward current transfer ratio hFE 25°C 1 0 hFE VCE Ta = 120°C 10−1 0 10 102 1 Collector current IC (A) 10−1 1 10 0 0.4 102 tstg IB(END) Area of safe operation 0.8 1.2 1.6 Base current IB(END) (A) Collector-emitter voltage VCE (V) Area of safe operation (Horizontal operation) 102 2.0 fH = 32 kHz IC = 10 A L load ICP = 30 A 10 IC = 20 A Collector current IC (A) 1.6 1.2 0.8 fH = 32 kHz, TC < 90°C ASO for a single pulse load caused by EHT flashover during horizontal operation. t = 100 µs PC = 70 W 30 1 ms 10 ms DC operation 1 10−1 20 10 10−2 0.4 0 0.4 8 Collector-emitter voltage VCE (V) 10 10−2 10−1 6 Collector current IC (A) 0 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 0.6 A Collector current IC (A) Without heat sink 2 Ambient temperature Ta (°C) Storage time tstg (µs) 0.8 A 1.6 A 8 0 10−3 0.8 1.2 Base current IB(END) (A) 2 IC VBE 12 1.4 A 1.2 A 1.0 A 3 Collector current IC (A) Collector power dissipation PC (W) 10 1.6 TC = 25°C Single pulse 1 10 102 103 Collector-emitter voltage VCE (V) SJD00306BED 0 < 1 mA 0 500 1 000 1 500 2 000 Collector-emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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