Transistors 2SC5472 Silicon NPN epitaxial planer type (0.425) Unit: mm For low-voltage low-noise high-frequency oscillation 0.3+0.1 –0.0 0.15+0.10 –0.05 Symbol Rating Unit VCBO 9 V Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 1 V Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 5° 2.1±0.1 0.2±0.1 2 1.3±0.1 2.0±0.2 10° 0 to 0.1 Parameter 1.25±0.10 1 (0.65) (0.65) ■ Absolute Maximum Ratings Ta = 25°C Collector to base voltage 0.9+0.2 –0.1 • High transition frequency fT • High gain of 8.2 dB and low noise of 1.8 dB at 3 V • Optimum for RF amplification of a portable telephone and pager • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 3 ■ Features 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S-Mini Type Package Marking Symbol: 3A ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Collector cutoff current ICBO VCB = 9 V, IE = 0 Emitter cutoff current IEBO VEB = 1 V, IC = 0 Forward current transfer ratio hFE VCE = 3 V, IC = 10 mA fT VCE = 3 V, IC = 10 mA, f = 2 GHz 12.0 VCB = 3 V, IE = 0, f = 1 MHz 0.6 Transition frequency Collector output capacitance Forward transfer gain Noise figure Cob | S21e NF |2 VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 1.5 GHz 80 6.0 Max Unit 1 µA 1 µA 200 GHz 0.9 8.0 1.8 pF dB 3.0 dB 1 2SC5472 Transistors hFE IC f T IC 14 Ta = 75°C 120 −25°C 25°C 80 40 1 3 10 30 100 Collector current IC (mA) VCE = 3 V f = 1.5 GHz Noise figure NF (dB) 4 3 2 1 0.3 1 3 Collector current IC (mA) 2 10 8 6 4 0 3 10 30 10 100 VCE = 3 V f = 2 GHz 8 6 4 2 0 1 Collector current IC (mA) NF IC 5 0 0.1 VCE = 3 V 2 0.3 10 Forward transfer gain | S21e | 2 (dB) 160 0 0.1 | S21e | 2 IC 12 200 Transition frequency fT (GHz) Forward current transfer ratio hFE 240 1 3 10 30 Collector current IC (mA) 100