Transistors IC SMD Type Silicon NPN Epitaxial Planar type 2SC3707 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High transition frequency fT 0.55 Possible with the small current and low voltage +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Mini type package, allowing downsizing of the equipment and automatic +0.05 0.1-0.01 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 insertion through the tape packing and the magazine packing 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 10 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 2 V Collector current IC 10 mA Collector power dissipation PC 50 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 10 V, IE = 0 1 ìA Emitter cutoff current IEBO VEB = 1.5 V, IC = 0 1 ìA Forward current transfer ratio hFE VCE = 1 V, IC = 1 mA Transition frequency fT 150 4 GHz VCB = 1 V, IE = 0, f = 1 MHz 0.4 pF |S21e| VCE = 1 V, IC = 1 mA, f = 0.8 GHz 6.0 dB Maximum unilateral power gain GUM VCE = 1 V, IC = 1 mA, f = 0.8 GHz 15 dB Noise figure NF VCE = 1 V, IC = 1 mA, f = 0.8 GHz 3.5 dB Collector output capacitance VCE = 1 V, IC = 1 mA, f = 0.8 GHz 50 Cob 2 Forward transfer gain Marking Marking 2X www.kexin.com.cn 1