Transistors 2SC5580 Silicon NPN epitaxial planer type (0.425) Unit: mm For high-frequency oscillation / switching 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • High transition frequency fT • S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 3 ■ Features 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 10° Parameter Symbol Rating Unit VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector to base voltage 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1: Base 2: Emitter 3: Collector EIAJ: SC-70 S-Mini Type Package Marking Symbol: 3R ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Emitter cutoff current IEBO VEB = 2 V, IC = 0 Collector to base voltage VCBO IC = 100 µA, IE = 0 15 VCE = 4 V, IC = 2 mA 100 VCE = 4 V, IC = 100 µA/2 mA 0.6 Forward current transfer ratio hFE ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance hFE hFE(RATIO) VCE(sat) fT Cob Typ VCB = 10 V, IE = 0, f = 1 MHz 0.6 Unit 2 µA V 350 IC = 20 mA, IB = 4 mA VCE = 5 V, IC = 15 mA, f = 200 MHz Max 1.5 dB 0.5 V 1.1 1.2 GHz 1.6 pF 1