Power Transistors 2SB0932 (2SB932) Silicon PNP epitaxial planar type For Power switching Unit: mm Rating Unit Collector-base voltage (Emitter open) VCBO −130 V Collector-emitter voltage (Base open) VCEO −80 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −4 A Peak collector current ICP −8 A Collector power dissipation PC 35 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 14.4±0.5 3.0+0.4 –0.2 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 (8.5) (6.0) 1.3 3 (7.6) Symbol 2 0 to 0.4 4.4±0.5 1.5+0 –0.4 10.0±0.3 1.5±0.1 1 Parameter Ta = 25°C 1.0±0.1 (1.5) ■ Absolute Maximum Ratings TC = 25°C 6.0±0.2 4.4±0.5 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 3.4±0.3 2.0±0.5 ■ Features 8.5±0.2 (6.5) 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared. 1.3 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0 −10 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −50 µA hFE1 VCE = −2 V, IC = − 0.1 A 45 hFE2 * VCE = −2 V, IC = −1 A 90 Forward current transfer ratio Conditions Min Typ Max −80 Unit V 260 Base-emitter voltage VBE(sat) IC = −3 A, IB = − 0.15 A −1.5 V Collector-emitter saturation voltage VCE(sat) IC = −3 A, IB = − 0.15 A − 0.5 V Transition frequency fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz Turn-on time ton IC = −1 A, Storage time tstg Fall time tf 30 MHz 0.15 µs IB1 = − 0.1 A, IB2 = 0.1 A 0.8 µs VCC = −50 V 0.15 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE2 90 to 180 130 to 260 Note) The part number in the parenthesis shows conventional part number. Publication date: April 2003 SJD00014BED 1 2SB0932 20 10 VCE(sat) IC IB = −100 mA TC = 25°C −90 mA −80 mA −70 mA −60 mA −5 −50 mA −4 −40 mA −3 −30 mA −20 mA −2 −8 mA −1 (2) −5 mA (3) 0 0 40 80 120 160 −2 0 −4 VBE(sat) IC Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) −10 TC = −25°C 100°C 25°C − 0.1 − 0.01 − 0.01 − 0.1 −1 TC = 100°C 102 104 10 − 0.1 1 03 102 10 −10 −100 100 −1 102 10 − 0.1 ton tf 0 − 0.8 −1.6 −2.4 Collector current IC (A) SJD00014BED −10 Safe operation area tstg 0.1 −1 Collector current IC (A) 1 0.01 −10 103 1 − 0.01 −10 Pulsed tW = 1 ms Duty cycle = 1% IC / IB = 30 (−IB1 = IB2) VCC = −50 V TC = 25°C 10 −1 VCE = −10 V f = 10 MHz TC = 25°C ton, tstg, tf IC Turn-on time ton , Storage time tstg , Fall time tf (µs) Collector output capacitance C (pF) (Common base, input open circuited) ob − 0.1 Collector current IC (A) Collector current IC (A) Collector-base voltage VCB (V) 2 25°C −25°C 1 − 0.01 −10 IE = 0 f = 1 MHz TC = 25°C −1 −25°C fT I C 103 Cob VCB 1 − 0.1 25°C TC = 100°C − 0.01 − 0.01 VCE = −2 V Collector current IC (A) 104 −10 −1 hFE IC 104 IC / IB = 20 −1 −8 −10 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −100 −6 IC / IB = 20 − 0.1 Transition frequency fT (MHz) 0 −100 −100 Collector current IC (A) 30 Collector current IC (A) (1)TC = Ta (2)With a 50 mm × 50 mm × 2 mm Al heat sink (3)Without heat sink (PC = 1.3 W) (1) Collector power dissipation PC (W) IC VCE −6 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 40 Non repetitive pulse TC = 25°C ICP −10 IC t = 0.5 ms t = 10 ms t = 1 ms −1 DC − 0.1 −3.2 − 0.01 −1 −10 −100 −1 000 Collector-emitter voltage VCE (V) 2SB0932 Rth - t Thermal resistance Rth (°C/W) 103 (1)Without heat sink (2)With a 50 mm × 50 mm × 2 mm Al heat sink (1) 102 (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00014BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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