Transistor 2SC5019 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm ● 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low noise figure NF. High gain. High transition frequency fT. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 3 ■ Absolute Maximum Ratings * 2 1 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V Collector current IC 80 mA Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : W Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter (Ta=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 1 µA Emitter cutoff current IEBO VEB = 2V, IC = 0 1 µA Collector to base voltage VCBO IC = 10µA, IE = 0 15 V Collector to emitter voltage VCEO IC = 100µA, IB = 0 10 V Forward current transfer ratio hFE VCE = 8V, IC = 20mA 80 Transition frequency fT VCE = 8V, IC = 20mA, f = 800MHz 5 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Foward transfer gain | S21e |2 VCE = 8V, IC = 20mA, f = 800MHz Maximum unilateral power gain GUM Noise figure NF 250 6 0.9 7.5 GHz 1.2 pF 10 dB VCE = 8V, IC = 20mA, f = 800MHz 11.5 dB VCE = 8V, IC = 20mA, f = 800MHz 1.7 dB 1 Transistor 2SC5019 PC — Ta IC — VCE 1.0 0.8 0.6 0.4 120 20 180µA 160µA 16 140µA 120µA 12 100µA 80µA 8 60µA 40µA 4 0.2 40 60 80 100 120 140 160 –25˚C 80 60 40 0 0 2 10 3 Ta=75˚C 25˚C –25˚C 0.1 0.03 0.01 0.1 0.3 1 3 10 30 400 Ta=75˚C 300 25˚C 200 –25˚C 100 0.3 0.4 1 3 10 1 3 10 30 30 100 Collector to base voltage VCB (V) 24 2.0 6 4 2 0.3 1 3 10 30 100 Collector current IC (mA) NF — IC 12 VCE=8V f=800MHz Ta=25˚C 20 16 12 8 4 0 0.1 1.6 8 0 0.1 100 VCE=8V (Rg=50Ω) f=800MHz Ta=25˚C 10 Noise figure NF (dB) Maximum unilateral power gain GUM (dB) 0.8 1.2 VCE=8V f=800MHz Ta=25˚C GUM — IC 1.2 0.8 10 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 0.3 0.4 Base to emitter voltage VBE (V) fT — IC 500 0 0.1 100 1.6 0 0.1 0 12 Cob — VCB 2.0 12 VCE=8V Collector current IC (mA) 2.4 10 600 Forward current transfer ratio hFE 30 0.3 8 hFE — IC IC/IB=10 1 6 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 4 Transition frequency fT (GHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C Ta=75˚C 20 0 0 Collector output capacitance Cob (pF) 100 20µA 0 2 VCE=8V Ta=25˚C IB=200µA Collector current IC (mA) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 IC — VBE 24 Collector current IC (mA) Collector power dissipation PC (W) 1.4 8 6 4 2 0.3 1 3 10 30 Collector current IC (mA) 100 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 100