Transistors 2SC5592 Silicon NPN epitaxial planer type Unit: mm For DC-DC converter For various driver circuits 0.40+0.10 –0.05 1.9±0.1 1.1+0.3 –0.1 1.1+0.2 –0.1 10° 0 to 0.1 Symbol Rating Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 5 V Peak collector current ICP 10 A Collector current IC 2.5 A * 0.4±0.2 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter 5° 2 1 (0.95) (0.95) (0.65) • Low collector to emitter saturation voltage VCE(sat) , large current capacitance • High-speed switching • Mini type 3-pin package, allowing downsizing and thinning of the equipment. • Complementary pair with 2SA2010 2.8+0.2 –0.3 1.50+0.25 –0.05 3 ■ Features Collector power dissipation 0.16+0.10 –0.06 PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol: 2T Note) *: Measure on the ceramic substrate at 15 × 15 × 0.6 mm3. ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit 0.1 µA ICBO VCB = 10 V, IE = 0 Collector to base voltage VCBO IC = 10 µA, IE = 0 15 V Collector to emitter voltage VCEO IC = 1 mA, IB = 0 15 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 Forward current transfer ratio *1 hFE1 VCE = 2 V, IC = 100 mA 400 hFE2 VCE = 2 V, IC = 2.5 A 280 VCE(sat) IC = 1 A, IB = 10 mA 110 IC = 2.5 A, IB = 50 mA 220 VCB = 10 V, IE = 0, f = 1 MHz 30 pF VCB = 10 V, IE = −50 mA f = 200 MHz 180 MHz Collector cutoff current Collector to emitter saturation voltage *1 Collector output capacitance Transition frequency Cob fT 5 V 1 000 mV 320 mV Turn-on time *2 ton 30 ns Storage time *2 tstg 100 ns Fall time *2 tf 10 ns Note) *1: Rank classification (≤ 1 ms) *2: Refere to the measurement circuit. 1 2SC5592 Transistors ■ Measurement Circuit IB2 IB1 Input Output RB PW = 20 µs DC ≤ 1% RL 470 µF VCC = 5 V −201B1 = 201B2 = IC = 1.5 A 2