Transistors 2SB0710, 2SB0710A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD0602 and 2SD0602A 0.40+0.10 –0.05 1.9±0.1 Collector to emitter voltage 2SB0710 1.1+0.2 –0.1 Symbol Rating Unit VCBO −30 V V 1: Base 2: Emitter 3: Collector −60 2SB0710A −25 VCEO −50 2SB0710A Emitter to base voltage VEBO −5 V Peak collector current ICP −1 A Collector current IC −500 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.4±0.2 1.1+0.3 –0.1 10° 0 to 0.1 Collector to base voltage 5° 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C 2SB0710 2 1 (0.95) (0.95) (0.65) • Large collector current IC • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.8+0.2 –0.3 1.50+0.25 –0.05 3 ■ Features Parameter 0.16+0.10 –0.06 JEDEC: TO-236 EIAJ: SC-59 Mini Type Package Marking Symbol • 2SB0710 : C • 2SB0710A : D ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol 2SB0710 Collector to emitter voltage 2SB0710 Min ICBO VCB = −20 V, IE = 0 VCBO IC = −10 µA, IE = 0 VCEO IC = −10 mA, IB = 0 VEBO IE = −10 µA, IC = 0 −5 Collector cutoff current Collector to base voltage Conditions Typ Max Unit − 0.1 µA −30 V −60 2SB0710A −25 V −50 2SB0710A Emitter to base voltage V VCE = −10 V, IC = −150 mA 85 hFE2 VCE = −10 V, IC = −500 mA 40 Collector to emitter saturation voltage *1 VCE(sat) IC = −300 mA, IB = −30 mA − 0.35 − 0.6 V Base to emitter saturation voltage *1 VBE(sat) IC = −300 mA, IB = −30 mA −1.1 −1.5 V VCB = −10 V, IE = 50 mA, f = 200 MHz 200 Forward current transfer ratio *1 hFE1 Transition frequency fT Collector output capacitance Cob *2 VCB = −10 V, IE = 0, f = 1 MHz 340 6 MHz 15 pF Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q R S No-rank 85 to 170 120 to 240 170 to 340 85 to 340 Marking 2SB0710 CQ CR CS C symbol 2SB0710A DQ DR DS D Product of no-rank is not classified and have no indication for rank. 1 2SB0710, 2SB0710A Transistors PC Ta IC VCE IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −400 80 −3 mA −2 mA −200 40 0 40 80 120 160 0 –2 −1 Ta=75°C −25°C − 0.003 −100 0 –12 −10 −30 −100 −300 −1 000 −10 3 25°C Ta = −25°C 75°C − 0.01 −1 −3 −10 −30 200 160 120 80 40 2 3 5 10 20 30 50 Emitter current IE (mA) 100 Collector output capacitance Cob (pF) VCB = −10 V Ta = 25°C 400 300 Ta = 75°C 25°C −25°C 200 100 0 − 0.01 − 0.03 − 0.1 − 0.3 −100 −300 −1 000 16 12 8 4 0 −1 −2 −3 −5 −10 −1 −3 −10 Collector current IC (A) VCER RBE IE = 0 f = 1 MHz Ta = 25°C 20 −10 500 Cob VCB 24 −8 VCE = −10 V Collector current IC (mA) fT I E −6 hFE IC IC / IB = 10 −1 −4 600 −20−30 −50 −100 Collector to base voltage VCB (V) −120 Collector to emitter voltage VCER (V) −3 −2 0 Base current IB (mA) − 0.03 240 Transition frequency fT (MHz) –10 −30 Collector current IC (mA) 1 –8 − 0.1 − 0.01 2 –6 − 0.3 − 0.03 − 0.001 −1 –4 −100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) IC / IB = 10 25°C −200 VBE(sat) IC −3 − 0.1 −300 −1 mA VCE(sat) IC − 0.3 −400 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) −10 −500 Forward current transfer ratio hFE 0 Collector current IC (mA) −600 −600 120 VCE = −10 V Ta = 25°C −700 Collector current IC (mA) Collector power dissipation PC (mW) Ta = 25°C −800 160 0 −800 −1 000 200 0 IC I B −1 200 240 IC = −2 mA Ta = 25°C −100 −80 −60 2SB0710A −40 2SB0710 −20 0 1 3 10 30 100 300 1 000 Base to emitter resistance RBE (kΩ)