BC847B Transistors NPN General Purpose Transistor BC847B zExternal dimensions (Unit : mm) zFeatures 1) BVCEO < 45V (IC=1mA) 2) Complements the BC857B. 2.9±0.2 0.95 +0.2 −0.1 1.9±0.2 zPackage, marking, and Packaging specifications Packaging type SST3 Marking G1F Code T116 Basic ordering unit (pieces) 3000 (2) (1) 2.4±0.2 BC847B +0.2 1.3 −0.1 Part No. 0.45±0.1 0.95 0.95 0~0.1 0.2Min. (3) +0.1 0.4 −0.05 +0.1 0.15 −0.06 All terminals have the same dimensions ROHM : SST3 (1) Emitter (2) Base (3) Collector zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 6 V IC 0.1 A Parameter Collector current 0.2 PC Collector power dissipation ∗ W 0.35 Junction temperature Tj 150 °C Storage temperature Tstg −65 to +150 °C ∗ When mounted on a 7×5×0.6mm ceramic board. zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage BVCBO 50 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 45 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=50µA − − 15 nA VCB=30V µA VCB=30V, Ta=150°C Parameter Collector cutoff current ICBO − − 5 − − 0.25 − − 0.6 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(on) 0.58 − 0.77 V hFE 200 − 450 − DC current transfer ratio V Conditions IC/IB=10mA/0.5mA IC/IB=100mA/5mA VCE/IC=5V/10mA fT − 200 − MHz Collector output capacitance Cob − 3 − pF VCB=10V, IE=0, f=1MHz Emitter input capacitance Cib − 8 − pF VEB=0.5V, IC=0, f=1MHz Transition frequency VCE=5V, IE=−20mA, f=100MHz Rev.A 1/5 BC847B Transistors zElectrical characteristic curves The electrical characteristic curves for these products are the same as those of UMT222A, SST222A, MMST2222A and PN2222A. 10.0 IC−COLLECTOR CURRENT (mA) Ta=25°C 80 1.2 1.0 0.8 IC-COLLECTOR CURRENT (mA) 100 0.6 60 40 0.4 0.2 0.1 20 IB=0mA 0 2.0 0 1.0 VCE−COLLECTOR-EMITTER VOLTAGE (V) Fig.1 Grounded emitter output characteristics ( ) 35 30 8.0 25 6.0 20 15 4.0 10 2.0 5 IB=0µA Ta=25°C 0 0 2.0 1.0 VCE-COLLECTOR-EMITTER VOLTAGE (V) Fig.2 Grounded emitter output characteristics ( ) 1000 hFE-DC CURRENT GAIN Ta=25°C VCE=10V 1V 100 10 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 5V 100 1000 Fig.3 DC current gain vs. collector current ( ) hFE-DC CURRENT GAIN 1000 VCE=5V Ta=125°C Ta=25°C Ta=−55°C 100 10 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 1000 Fig.4 DC current gain vs. collector current ( ) Rev.A 2/5 BC847B Transistors 1000 hFE-AC CURRENT GAIN Ta=25°C VCE=5V f=1kHz 100 10 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) 10 100 0.16 Ta=25°C IC/IB=10 0.12 0.08 0.04 0 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 100 Fig.6 Collector-emitter saturation voltage vs. collector current 1000 Ta=25°C IC/IB=10 Ta=25°C IC/IB=10 1.8 1.6 1.2 0.8 0.4 0 0.1 1.0 10 IC-COLLECTOR CURRENT (mA) 1000 Ta=25°C IC/IB=10 1.6 1.2 0.8 0.4 0 0.1 100 Fig.7 Base-emitter saturation voltage vs. collector current Ta=25°C VCE=5V 1.8 VBE(ON)BASE EMITTER VOLTAGE (V) VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.18 VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V) Fig.5 AC current gain vs. collector current 1.0 10 IC-COLLECTOR CURRENT (mA) 100 Fig.8 Grounded emitter propagation characteristics 1000 40V Ta=25°C IC=101B1=101B2 100 10 1.0 VCC=40V 100 10 IC-COLLECTOR CURRENT (mA) Fig.9 Turn-on time vs. collector current 100 tS-STORAGE TIME (ns) t r -RISE TIME (ns) ton-TURN ON TIME (ns) 3V 10 1.0 10 IC-COLLECTOR CURRENT (mA) Fig.10 Rise time vs. collector current VCE=15V 100 100 10 1.0 10 IC-COLLECTOR CURRENT (mA) 100 Fig.11 Storage time vs. collector current Rev.A 3/5 BC847B CAPACITANCE (pF) t f -FALL TIME (ns) 100 10 IC-COLLECTOR CURRENT (mA) Cob 1 0.5 100 100 100 h PARAMETER NORMALIZED TO 1mA CURRENT GAIN-BANDWIDTH PRODUCT (MHz) 1 10 REVERSE BIAS VOLTAGE (V) 500 Fig.15 Gain bandwidth product vs. collector current hoe hre 10 hie hre 1 IC=1mA hie=7.8kΩ hfe=280 hie hre=4.5×10−5 hoe=7.5µS hoe 0.1 0.1 1 10 IC-COLLECTOR CURRENT (mA) 0.5 0.5 100 10n 1n 100P 10P 1P 0.1P 0 10k Fig.18 Noise vs. collector current 100k 150 Fig.17 Collector cutoff current 100k dB 12 B 8d B 5d 2 25 50 75 100 125 TA-AMBIENT TEMPERATURE (°C) Ta=25°C VCE=5V f=10Hz dB =1 4 500 VCB=30V B 6 10 100 IC-COLLECTOR CURRENT (mA) NF 8 1k f-FREQUENCY (Hz) 300MHz 200MHz 100MHz 5.0 3d Ta=25°C VCE=5V IC=100µA RS=10kΩ 100 400MHz Fig.16 h parameter vs. collector current 10 NF NOISE FIGURE (dB) hfe hfe Ta=25°C Fig.14 Gain bandwidth product Ta=25°C VCE=6V f=270Hz 12 0 10 50 50 100MHz 200MHz 300MHz 400MHz Fig.13 Input/output capacitance vs. voltage Ta=25°C VCE=5V 10 0.5 1.0 10 100 IC-COLLECTOR CURRENT (mA) Cib 10 Fig.12 Fall time vs. collector current 1000 Ta=25°C f=1MHz ICBO-COLLECTOR CUTOFF CURRENT (A) 10 1.0 100 Ta=25°C VCC=40V IC=101B1=101B2 RS-SOURCE RESISTANCE (Ω) 1000 VCE COLLECTOR-EMITTER VOLTAGE (V) Transistors 10k 1k 100 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) 10 Fig.19 Noise characteristics ( ) Rev.A 4/5 BC847B Transistors B B RS-SOURCE RESISTANCE (Ω) 8d B ) 5d Fig.21 Noise characteristics ( 10 3d 0.1 1 IC-COLLECTOR CURRENT (mA) B 100 0.01 1d 1k Ta=25°C VCE=5V 10k f=10kHz = NF dB B RS-SOURCE RESISTANCE (Ω) B 12 8d Fig.20 Noise characteristics ( ) dB 10 =1 0.1 1 IC-COLLECTOR CURRENT (mA) Ta=25°C VCE=5V f=1kHz 10k NF B 100 0.01 100k B B B 1k 100k 3d dB 8d d =1 B 10k Ta=25°C VCE=5V f=30Hz 5d 12 5d 3d NF RS-SOURCE RESISTANCE (Ω) 100k 1k 100 0.01 0.1 1 IC-COLLECTOR CURRENT (mA) Fig.22 Noise characteristics ( Rev.A 10 ) 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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