UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features Description • RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factorcorrection. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D D G G S D-PAK S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR EAR dv/dt Peak Diode Recovery dv/dt -Continuous (TC = 25oC) ±30 V A 2.1 (Note 1) 14 A (Note 2) 257 mJ Avalanche Current (Note 1) 3.5 A Repetitive Avalanche Energy (Note 1) 4 mJ (Note 3) 4.5 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Units V 3.5 -Continuous (TC = 100oC) - Pulsed Ratings 500 - Derate above 25oC 40 W 0.3 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 1.4 RθJA Thermal Resistance, Junction to Ambient 110 ©2007 Fairchild Semiconductor Corporation FDD5N50F Rev. A1 1 Units o C/W www.fairchildsemi.com FDD5N50F N-Channel MOSFET, FRFET December 2007 Device Marking FDD5N50F Device FDD5N50FTM Package D-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 FDD5N50F FDD5N50FTF D-PAK 380mm 16mm 2000 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units ID = 250µA, VGS = 0V, TJ = 25oC 500 - - V ID = 250µA, Referenced to 25oC - 0.6 - V/oC VDS = 500V, VGS = 0V Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current - - 10 VDS = 400V, TC = 125oC - - 100 VGS = ±30V, VDS = 0V - - ±100 µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA 3.0 - 5.0 V Static Drain to Source On Resistance VGS = 10V, ID = 1.75A - 1.25 1.55 Ω gFS Forward Transconductance VDS = 20V, ID = 1.75A - 4.3 - S - 490 650 pF - 66 88 pF - 5 7.5 pF - 11 15 nC - 3 - nC - 5 - nC - 13 36 ns - 22 54 ns - 28 66 ns - 20 50 ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 5A VGS = 10V (Note 4, 5) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 5A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 3.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 14 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 3.5A - - 1.5 V trr Reverse Recovery Time - 65 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 5A dIF/dt = 100A/µs - 0.120 - µC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 42mH, IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 3.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDD5N50F Rev. A1 2 www.fairchildsemi.com FDD5N50F N-Channel MOSFET, FRFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 2. Transfer Characteristics 10 20 1 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] ID,Drain Current[A] Figure 1. On-Region Characteristics o 150 C o 25 C 1 *Notes: 1. 250µs Pulse Test 0.1 *Notes: 1. VDS = 20V 2. 250µs Pulse Test o 2. TC = 25 C 0.04 0.1 1 VDS,Drain-Source Voltage[V] 0.1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 VGS,Gate-Source Voltage[V] 50 IS, Reverse Drain Current [A] 2.0 1.8 VGS = 10V VGS = 20V 1.6 1.4 10 o 150 C o 25 C 1 *Notes: 1. VGS = 0V o 1.2 *Note: TJ = 25 C 0 4 8 12 ID, Drain Current [A] 16 0.2 0.0 20 2. 250µs Pulse Test 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] 1.6 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 1000 10 750 Ciss VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.2 RDS(ON) [Ω], Drain-Source On-Resistance 4 *Note: 1. VGS = 0V 2. f = 1MHz 500 Coss 250 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 FDD5N50F Rev. A1 1 10 VDS, Drain-Source Voltage [V] 0 30 3 *Note: ID = 5A 0 3 6 9 Qg, Total Gate Charge [nC] 12 www.fairchildsemi.com FDD5N50F N-Channel MOSFET, FRFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area 30 40µs 10 ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 -25 25 75 125 o TJ, Junction Temperature [ C] 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: o 1. TC = 25 C *Notes: 1. VGS = 0V 2. ID = 250µA 0.8 -75 100µs o 0.01 175 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 9. Maximum Drain Current ID, Drain Current [A] 4 3 2 1 0 25 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 10. Transient Thermal Response Curve Thermal Response [ZθJC] 3 1 0.5 0.2 0.1 0.1 t1 0.02 *Notes: 0.01 t2 o 0.01 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.003 -5 10 FDD5N50F Rev. A1 PDM 0.05 -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 2 10 www.fairchildsemi.com FDD5N50F N-Channel MOSFET, FRFET Typical Performance Characteristics (Continued) FDD5N50F N-Channel MOSFET, FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDD5N50F Rev. A1 5 www.fairchildsemi.com FDD5N50F N-Channel MOSFET, FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDD5N50F Rev. A1 6 www.fairchildsemi.com FDD5N50F N-Channel MOSFET, FRFET Mechanical Dimensions D-PAK Dimensions in Millimeters FDD5N50F Rev. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com