TPC8213-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8213-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable-Equipment Applications • Small footprint due to small and thin package • High-speed switching • Small gate charge: QSW = 2.9 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 40 mΩ (typ.) • High forward transfer admittance: |Yfs| =11 S (typ.) • Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage VDSS 60 V Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V Gate−source voltage VGSS ±20 V DC (Note 1) ID 5 Pulse (Note 1) IDP 20 PD (1) 1.5 PD (2) 1.1 PD (1) 0.75 PD 2) 0.45 Single-pulse avalanche energy (Note 4) EAS 90 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 2a, Note 3b, Note 5) EAR 0.087 mJ Drain current Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device operation (Note 3a) Drain power dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) A JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.085 g (typ.) W Circuit Configuration W Channel temperature Tch 150 ℃ Storage temperature range Tstg −55～150 ℃ Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-17 TPC8213-H Thermal Characteristics Characteristic Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 83.3 Rth (ch-a) (2) 114 Rth (ch-a) (1) 167 Rth (ch-a) (2) 278 Unit °C/W Marking TPC8213 H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150°C during use. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25°C (Initial), L = 5 mH, RG = 25 Ω, IAR = 5.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-11-17 TPC8213-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cutoff current IDSS VDS = 60 V, VGS = 0 V — — 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V V (BR) DSX ID = 10 mA, VGS = −20 V 45 — — Vth VDS = 10 V, ID = 1 mA 1.1 — 2.3 RDS (ON) VGS = 4.5 V, ID = 2.5 A — 45 56 RDS (ON) VGS = 10 V , ID = 2.5 A — 40 50 Forward transfer admittance |Yfs| VDS = 10 V , ID = 2.5 A 5.5 11 — Input capacitance Ciss — 625 — Reverse transfer capacitance Crss — 35 — Output capacitance Coss — 175 — — 4 — — 10 — Drain−source ON-resistance Rise time Turn−on time tr VDS = 10 V, VGS = 0 V, f = 1 MHz ton Switching time Fall time Turn−off time Total gate charge (gate-source plus gate-drain) (Note 7) ID = 2.5 A 出力 10 V VGS 0V RL = 12 Ω Gate threshold voltage 4.7 Ω Drain−source breakdown voltage tf toff Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd Gate switch charge QSW 2 — — 19 — VDD ∼ − 48 V, VGS = 10 V, ID = 5 A ⎯ 11 ⎯ VDD ∼ − 48 V, VGS = 5 V, ID = 5 A ⎯ 6 ⎯ ⎯ 1.6 ⎯ ⎯ 2.4 ⎯ ⎯ 2.9 ⎯ Duty < = 1%, tw = 10 µs VDD ∼ − 48 V, VGS = 10 V, ID = 5 A mΩ S pF ns — VDD ∼ − 30 V V nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP — — — 20 A — — −1.2 V VDSF IDR = 5 A, VGS = 0 V 3 2006-11-17 TPC8213-H ID – VDS ID – VDS 10 20 3.75 Common source Ta = 25°C 3.5 Pulse test 8 Drain current ID (A) 8 6 3.25 5 6 Drain current ID (A) 10 4.5 3 4 2.75 2 10 8 4.5 16 3.75 source Ta =25°C Common Pulse test 5 6 3.5 12 3.25 8 3 4 2.75 VGS = 2.5V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS VGS = 2.5V 0 1 (V) 2 1 0 ID – VGS Common source Drain-source voltage VDS (V) Drain current ID (A) (V) VDS – VGS VDS = 10 V Pulse test 12 8 100 Ta = −55°C 4 25 1 2 4 3 Gate-source voltage VGS Ta = 25℃ 0.4 0.3 ID = 5 A 0.2 2.5 0.1 1.3 0 5 Pulse test 0 (V) 2 4 6 Gate-source voltage ⎪Yfs⎪ – ID (S) 5 0.5 Common source 0 0 4 Drain-source voltage VDS 20 16 3 8 10 VGS (V) 12 RDS (ON) – ID 100 1000 Common source 10 Drain-source ON-resistance RDS (ON) (mΩ) Forward transfer admittance |Yfs| Ta = 25°C Ta = −55°C 25 100 1 Common source Pulse test 100 4.5 VGS = 10 V 10 VDS = 10 V 0.1 0.1 Pulse test 1 10 1 0.1 100 Drain current ID (A) 1 10 100 Drain current ID (A) 4 2006-11-17 TPC8213-H RDS (ON) – Ta 100 100 Ta = 25°C Pulse test Pulse test ID = 5A 80 Drain reverse current IDR (A) Drain-source ON-resistance RDS (ON) (mΩ) Common source IDR – VDS Common source 1.3A,2.5A 60 40 20 VGS = 4.5 V ID = 1.3A,2.5A,5A 10 10 3 5 1 VGS = 10 V 1 0 VGS = -1 V 0 −80 −40 0 40 80 Ambient temperature 120 Ta 0.1 0 160 (°C) −0.2 −0.4 −1.2 (V) Vth – Ta Common source 2 Ta = 25°C Gate threshold voltage Vth (V) (pF) −1.0 2.5 VGS = 0 V f = 1 MHz Capacitance C −0.8 Drain-source voltage VDS Capacitance – VDS 10000 −0.6 Ciss 1000 Coss 100 Crss 1.5 1 Common source ソース接地 0.5 VDS 10VV DS==10 mA ID D == 11 mA Pulse test パルス測定 10 100 Drain-source voltage VDS (V) −40 (1) 1.2 (2) 0.8 (3) 0.4 40 80 Ambient temperature 120 Ta 160 (°C) 60 Device mounted on a Glass-epoxy board (a)(Note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation(Note 3b) Device mounted on a glass-epoxy board(b)(Note 2b) (3)Single-device operation(Note 3a) (4)Single-device value at dual operation(Note 3b) t=10s (4) 0 0 80 Dynamic input / output characteristics Drain-source voltage VDS (V) Drain power dissipation PD (W) 1.6 40 Ambient temperature PD – Ta 2 0 120 Ta 50 VDS VDD = 12 V 40 10 6 48 Common source 20 Ta = 25°C 10 5 2 Pulse test 4 4 ID = 5 A VGS 8 Total gate charge Qg (°C) 8 24 30 0 0 160 12 (V) 1 0 −80 Gate-source voltage VGS 10 0.1 0 16 12 (nC) 2006-11-17 TPC8213-H rth – tw Transient thermal impedance rth (℃/W) 1000 Single - pulse (4) (3) (2) 100 (1) 10 Device mounted on a glass-epoxy board (a) (note 2a) (1)Single-device operation (Note 3a) (2)Single-device value at dual operation (Note 3b) 1 Device mounted on a glass-epoxy board (b) (Note 2b) (3)Single-device operation (Note 3a) (4)Single-device value at dual operation (Note 3b) 0.1 0.001 0.01 0.1 1 Pulse width 10 100 1000 tw (s) Safe operating area Drain current ID (A) 100 Single-device value at dual operation (note 3b) ID max (Pulse) * t=1ms * 10 10ms * 1 * Single - pulse Ta=25℃ Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10 Drain-source voltage VDS 100 (V) 6 2006-11-17 TPC8213-H 7 2006-11-17