TOSHIBA TPC8A01_06

TPC8A01
Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ)
Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON
N CHANNEL MOS TYPE(U－MOSⅢ)
TPC8A01
DC-DC CONVERTER
Notebook PC
Portable Machines and Tools
•
•
•
•
•
•
•
•
Unit: mm
Includes Schottky Barrier Diode Type. (Q2)
Low Forward Voltage: VDSF=0.6V(Max.)
Small footprint due to small and thin package.
High Speed Switching.(Q1)
Small Gate Charge.(Q1): Qg＝17nC(Typ.)
Low drain-source ON resistance(Q2) RDS (ON) = 13 mΩ (typ.)
High forward transfer admittance(Q2): |Yfs| = 11 S (typ.)
Low leakage current. (Q1): IDSS = 10 µA(Max.) (VDS = 30 V)
(Q2): IDSS = 100 µA(Max.) (VDS = 30 V)
Enhancement-mode
: (Q1) Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA)
: (Q2) Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Q1
Q2
Unit
VDSS
30
30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
30
30
V
Gate-source voltage
VGSS
±20
±20
V
DC
(Note 1)
ID
6
8.5
Pulse
(Note 1)
IDP
24
34
Drain power Single-device operation
dissipation
(Note 3a)
(t = 10s)
Single-device value at
(Note 2a) dual operation (Note 3b)
Drain power Single-device operation
(Note 3a)
dissipation
(t = 10s)
Single-device value at
(Note 2b) dual operation (Note 3b)
PD(1)
1.5
PD(2)
1.1
PD(1)
0.75
PD(2)
0.45
Single pulse avalanche energy
EAS
Avalanche current
IAR
4 GATE
2 GATE
5, 6DRAIN/CATHOUDE
3 SURCE/ANODE
Drain-source voltage
Drain current
1 SOURCE
A
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
W
46.8
(Note 4a)
7, 8 DRAIN
93.9
(Note 4b)
6
8.5
8
7
6
2
3
5
mJ
A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
EAR
0.11
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
1
Q1
4
Q2
(Includes Schottky Barrier Diode)
Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products.
This current leakage and not proper operating temprature or voltage may cause thermalrun. Please take forward and
reverse loss into consideration when you design.
1
2006-11-16
TPC8A01
Thermal Characteristics
Characteristics
Single-device operation
(Note 3a)
Thermal resistance, channel to ambient
(t = 10s)
(Note 2a) Single-device value at
dual operation
(Note 3b)
Single-device operation
(Note 2a)
Thermal resistance, channel to ambient
(t = 10s)
(Note 2b) Single-device value at
dual operation
(Note 2b)
Symbol
Max
Rth (ch-a) (1)
83.3
Rth (ch-a) (2)
114
Rth (ch-a) (1)
167
Rth (ch-a) (2)
278
Unit
°C/W
Marking
TPC8A01
Type
Lot No.
※
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3:
a) The power dissipation and thermal resistance values are shown for a single device
(During single-device operation, power is only applied to one device.).
b) The power dissipation and thermal resistance values are shown for a single device
(During dual operation, power is evenly applied to both devices.).
Note 4:
a) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 6.0 A
b) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 8.5 A
Note 5: Repetitive rating; pulse width limited by max channel temperature.
Note 6: • on lower left of the marking indicates Pin 1.
※ Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
2
2006-11-16
TPC8A01
Q1
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
µA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
−10
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
⎯
⎯
Gate threshold voltage
Vth
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn-ON time
tr
VDS = 10 V, ID = 1 mA
1.1
⎯
2.3
VGS = 4.5 V, ID = 3.0 A
⎯
23
30
VGS = 10 V, ID = 3.0 A
⎯
18
25
VDS =10 V, ID = 3.0 A
4.5
9
⎯
⎯
940
⎯
⎯
130
⎯
⎯
390
⎯
⎯
17
⎯
⎯
25
⎯
⎯
4
⎯
Duty <
= 1%, tw = 10 µs
⎯
21
⎯
VDD ∼
− 24 V, VGS = 10 V,ID = 6.0 A
⎯
17
⎯
VDD ∼
− 24 V, VGS = 5 V,ID = 6.0 A
⎯
10
⎯
⎯
1.9
⎯
⎯
4.1
⎯
⎯
6
⎯
VDS = 10 V, VGS = 0 V, f = 1 MHz
ton
Switching time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
tf
toff
ID = 3.0 A
VOUT
VGS 10 V
0V
RL =
5.0 Ω
4.7 Ω
Drain-source breakdown voltage
VDD ∼
− 15 V
V
V
mΩ
S
pF
ns
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
Gateswitch charge
Qsw
VDD ∼
− 24 V, VGS = 10 V,ID = 6.0 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
24
A
⎯
⎯
−1.2
V
VDSF
IDR = 6.0 A, VGS = 0 V
3
2006-11-16
TPC8A01
Q2 (Includes Schottky Barrier Diode)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
⎯
⎯
±10
µA
Drain cut-OFF current
IDSS
VDS = 30 V, VGS = 0 V
⎯
⎯
10
µA
V (BR) DSS
ID = 10 mA, VGS = 0 V
30
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −20 V
15
⎯
⎯
Gate threshold voltage
Vth
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
Turn-ON time
tr
VDS = 10 V, ID = 1 mA
1.1
⎯
2.3
VGS = 4.5 V, ID = 4.3 A
⎯
16
21
VGS = 10 V, ID = 4.3 A
⎯
13
18
VDS = 10 V, ID = 4.3 A
5.5
11
⎯
⎯
2295
⎯
⎯
360
⎯
⎯
510
⎯
⎯
8
⎯
⎯
17
⎯
VDS = 10 V, VGS = 0 V, f = 1 MHz
VGS
ton
Switching time
Fall time
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge 1
Qgs1
Gate-drain (“miller”) charge
Qgd
Gateswitch charge
Qsw
0V
RL =
3.5 Ω
V
V
mΩ
S
pF
ns
⎯
15
⎯
Duty <
= 1%, tw = 10 µs
⎯
52
⎯
VDD ∼
− 24 V, VGS = 10 V,ID = 8.5 A
⎯
49
⎯
VDD ∼
− 24 V, VGS = 5 V,ID = 8.5 A
⎯
27
⎯
⎯
3.7
⎯
⎯
10.8
⎯
⎯
14.5
⎯
Min
Typ.
Max
Unit
A
tf
toff
ID = 4.3 A
VOUT
10 V
4.7 Ω
Drain-source breakdown voltage
VDD ∼
− 15 V
VDD ∼
− 24 V, VGS = 10 V,ID = 8.5 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
⎯
⎯
34
IDR = 1.0 A, VGS = 0 V
⎯
⎯
−0.5
−0.6
IDR = 8.5 A, VGS = 0 V
⎯
⎯
−1.2
IDRP
VDSF
4
V
2006-11-16
TPC8A01
Q1
ID – VDS
ID – VDS
10
10
4
8
3.2
2.9
2.8
2.7
2
12
8
0.2
0.4
0.6
Drain-source voltage
0.8
3.3
3.1
3.0
29
2.8
VGS=2.6V
VGS=2.5V
0
8
4
2.6
0
0
1
0
1
VDS (V)
2
3
4
Drain-source voltage
ID – VGS
5
VDS (V)
VDS – VGS
0.6
12
(V)
Common source
VDS
(A)
Common source
VDS = 10 V
Pulse test
25
Drain-source voltage
ID
8
Drain current
Ta = 25°C
Pulse test
3.5
3.2
6
4
Common source
4
6
(A)
3.0
ID
3.1
Drain current
ID
Drain current
10
16
(A)
8
Common source
Ta = 25°C
Pulse test
3.5
6
20
100
4
Tａ=-55℃
Ta = 25°C
0.5
Pulse test
0.4
0.3
0.2
ID=6A
0.1
3
1.5
0
0
0
1
2
3
4
Gate-source voltage
VGS
5
0
6
(V)
6
8
10
VGS
12
(V)
RDS (ON) – ID
1000
Common source
VDS = 10 V
Pulse test
Tａ=-55℃
25
Drain-source ON resistance
RDS (ON) (mΩ)
(S)
Forward transfer admittance ⎪Yfs⎪
4
Gate-source voltage
|Yfs| – ID
100
10
2
100
1
0.1
Common source
Ta = 25°C
Pulse test
100
VGS=4.5V
10
10
1
0.1
1
Drain current
10
100
0.1
ID (A)
1
Drain current
5
10
100
ID (A)
2006-11-16
TPC8A01
Q1
RDS (ON) – Ta
IDR – VDS
100
Drain reverse current IDR (A)
40
3
ID=6A
1.5
VGS=4.5V
20
ID=1.5,3,6A
10V
10
3
10
1
0
VGS=-1V
1
Common source
Ta = 25°C
Pulse test
Common source
Pulse test
0.1
0
-80
-40
0
40
80
Ambient temperature
120
Ta
0
160
- 0.2
(°C)
- 0.4
Capacitance – VDS
Capacitance
Vth (V)
100
Crss
Common source
Ta = 25°C
f = 1MHz
VGS = 0 V
1
0.1
1
10
Drain-source voltage
VDS (V)
Common source
VDS = 10 V
ID = 1 mA
Pulse test
1
0
-80
80
Ta
120
160
(°C)
Dynamic input/output characteristics
40
Common source
ID = 6 A
Ta = 25°C
Pulse test
(V)
VDS
Drain-source voltage
(W)
PD
40
40
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation (Note 3b)
Device mounted on a glass-epoxy board
(b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
1.2 (2)
0
Ambient temperature
Device mounted on a glass-epoxy board (a)
1.6 (1)
-40
100
PD – Ta
2
-1.2
2
Gate threshold voltage
Coss
C
(pF)
1000
10
-1
Vth – Ta
Ciss
Drain power dissipation
- 0.8
VDS (V)
3
10000
0.8 (3)
(4)
0.4
0
0
- 0.6
Drain-source voltage
30
30
VDS
20
20
12
6
10
10
VDD=24V
VGS
0
0
40
80
120
Ambient temperature
160
Ta
200
VGS (V)
30
5
10
Gate-source voltage
Drain-source ON resistance
RDS (ON) (mΩ)
50
0
5
10
15
20
25
30
Total gate charge Qg (nC)
(°C)
6
2006-11-16
TPC8A01
Q1
rth − tw
1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
300
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
Normalized transient thermal impedance
rth (°C/W)
500
(4)
(3)
(2)
(1)
100
50
30
10
5
3
1
0.5
0.3
Single pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(S)
Safe operating area
Single-device value at dual
operation
(Note 3b)
ID max (pulse) *
ID
(A)
1 ms *
Drain current
10 ms *
* Single pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
Drain-source voltage
VDSS max
VDS (V)
7
2006-11-16
TPC8A01
Q2(Includes Schottky Barrier Diode)
ID – VDS
10
10
10
2.6
16
3
Common source
2.8
Ta = 25°C
Pulse test
(A)
2.4
4
2.3
12
8
Common source
Ta = 25°C
Pulse test
0
0.2
0.4
2.5
2.4
2.3
2.2
2.1
VGS=2.1V
VGS=2.0V
0.6
Drain-source voltage
2.6
4
2.2
2
2.7
ID
6
8
6
Drain current
6
0
4
3
2.5
(A)
ID
3.5
8
8
Drain current
4
ID – VDS
20
0.8
0
0
1
1
VDS (V)
2
3
4
Drain-source voltage
ID – VGS
5
VDS (V)
VDS – VGS
20
0.6
(V)
Common source
VDS
100
Ta = 25°C
0.5
Pulse test
0.4
12
Drain-source voltage
Drain current
ID
(A)
16
25
8
Tａ=-55℃
4
Common source
VDS = 10 V
0
1
2
3
Gate-source voltage
ID=8.5A
0.1
4.3
0
4
5
VGS
0.2
2.1
Pulse test
0
0.3
0
6
(V)
2
4
|Yfs| – ID
8
Drain-source ON resistance
RDS (ON) (mΩ)
(S)
Common source
Ta = 25°C
Pulse test
25
100
10
1
Common source
VDS = 10 V
Pulse test
0.1
12
(V)
RDS (ON) – ID
Tａ=-55℃
0.1
10
VGS
1000
100
Forward transfer admittance ⎪Yfs⎪
6
Gate-source voltage
1
10
Drain current ID (A)
100
VGS=4.5V
10
VGS=10V
1
0.1
100
1
Drain current
8
10
100
ID (A)
2006-11-16
TPC8A01
Q2(Includes Schottky Barrier Diode)
RDS (ON) – Ta
50
IDR – VDS
100
Common source
Drain reverse current IDR (A)
30
4.3
ID=8.5A
2.1
20
VGS=4.5V
ID=2.1/4.3/8.5A
10
VGS=10V
0
5
10
3
10
1
VGS=0V
1
Common source
Ta = 25°C
Pulse test
0.1
-80
-40
0
40
80
Ambient temperature
120
Ta
160
0
- 0.2
(°C)
- 0.4
- 0.6
Capacitance – VDS
3
(V)
Coss
100
10
Common source
Ta = 25°C
f = 1MHz
VGS = 0 V
0.1
1
10
Drain-source voltage
1
0
-80
100
-40
VDS (V)
PD – Ta
2
(4)
0.4
80
120
Ambient temperature
120
160
(°C)
160
Ta
Common source
ID = 8.5 A
Ta = 25°C
Pulse test
(V)
VDS
Drain-source voltage
PD
0.8 (3)
40
80
Ta
Dynamic input/output characteristics
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
operation (Note 3b)
Device mounted on a glass-epoxy board
(b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
1.2 (2)
40
40
Device mounted on a glass-epoxy board (a)
1.6 (1)
0
Ambient temperature
30
30
VDS
20
20
12
6
VDD=24V
10
10
VGS
0
0
200
0
(°C)
40
VGS (V)
Capacitance
Common source
VDS = 10 V
ID = 1 mA
Pulse test
2
Gate threshold voltage
Crss
1
(W)
- 1.2
Vth
1000
C
(pF)
Ciss
Drain power dissipation
-1
VDS (V)
Vth – Ta
10000
0
0
- 0.8
Drain-source voltage
Gate-source voltage
Drain-source ON resistance
RDS (ON) (mΩ)
Pulse test
40
10
20
30
40
50
60
70
80
90
100
Total gate charge Qg (nC)
9
2006-11-16
TPC8A01
Q2(Includes Schottky Barrier Diode)
rth − tw
Normalized transient thermal impedance
rth (°C/W)
1000
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
300
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
500
(4)
(3)
(2)
(1)
100
50
30
10
5
3
1
0.5
0.3
Single pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(S)
Safe operating area
100
Single-device value at dual
operation
(Note 3b)
ID max (pulse) *
10
10 ms *
Drain current
ID
(A)
1 ms *
1
* Single pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
0.01
0.1
VDSS max
1
Drain-source voltage
10
100
VDS (V)
10
2006-11-16
TPC8A01
Q2 (VGS=0V)
IDSS – Tch
IDR – VDSF
10
(typ.)
100000
Tch=125℃
Drain reverse current
1
IDSS
IDR (A)
(μA)
Pulse test
Drain cut-OFF current
75℃
25℃
0.1
Pulse test
0.01
10000
20
1000
VDS = 30 V
10
5
100
10
0
0.2
0.4
0.6
Drain-source voltage
0.8
0
1
20
40
60
80
Channel temperature
VDS (V)
100
Tch
120
140
160
(°C)
Tch – VDS
160
Pulse test
Channel temperature
Tch
(℃)
140
120
100
80
60
40
20
0
0
10
20
Drain-source voltage
30
40
VDS (V)
11
2006-11-16
TPC8A01
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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2006-11-16