ROHM RF601T2D_11

Data Sheet
Fast recovery diode
RF601T2D
Applications
General rectification
Dimensions (Unit : mm)
 Structure
4.5±0.3
0.1
Features
1) Cathode common type.(TO-220)
2) Ultra Low V F
2.8±0.2
0.1
8.0±0.2
12.0±0.2
3) Very fast recovery
4) Low switching loss
1.2
13.5MIN
Construction
Silicon epitaxial planar
5.0±0.2
①
(1) (2) (3)
15.0±0.4
0.2
8.0
10.0±0.3
0.1
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
①
Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
Reverse voltage (repetitive peak)
200
VRM
Reverse voltage (DC)
200
VR
Average rectified forward current (*1)
6
Io
Forward current surge peak (60Hz/1cyc)
60
IFSM
Junction temperature
150
Tj
Storage temoerature
55 to 150
Tstg
(*1)Business frequency, Rating of R-load, Tc=132CMAX. 1/2 Io per diode
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Symbol
VF
C
C
Min.
Typ.
Max.
Unit
Conditions
0.87
0.01
0.93
10
V
μA
18
25
ns
IF=3A
VR=200V
IF=0.5A,IR=1A,Irr=0.25*I R
Reverse current
IR
-
Reverse recovery time
trr
-
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Unit
V
V
A
A
1/3
2011.05 - Rev.C
Data Sheet
RF601T2D
Electrical characteristics curves
10
100
10000
Ta=150C
Ta=125C
f=1MHz
1
Ta=125C
Ta=75C
0.1
Ta=25C
Ta=-25C
0.01
Ta=75C
100
Ta=25C
10
Ta=-25C
1
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1000
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:I F(A)
Ta=150C
10
0.001
0
100 200 300 400 500 600 700 800 900 100
0
1
0
0.1
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
AVE:859.4mV
850
80
70
60
50
40
30
AVE:4.60nA
20
VF DISPERSION MAP
120
110
100
90
AVE:99.4pF
80
70
Ct DISPERSION MAP
8.3ms
150
100
AVE:126.0A
50
0
1000
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
PEAK SURGE
FORWARD CURRENT:I FSM(A)
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
1cyc
Ifsm
200
Ta=25C
f=1MHz
VR=0V
n=10pcs
130
IR DISPERSION MAP
30
250
15
10
AVE:13.7ns
5
Ifsm
8.3ms
100
0
10
1
trr DISPERSION MAP
t
100
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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100
IM=100mA
10
1ms
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
10
Mounted on epoxy board
IF=3A
Rth(j-a)
time
300us
Rth(j-c)
1
DC
D=1/2
8
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
100
Ifsm
8.3ms
1cyc
1
IFSM DISPERSION MAP
1000
30
50
0
300
25
60
10
840
20
140
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
860
15
150
Ta=25C
VR=200V
n=30pcs
90
870
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
Ta=25C
IF=3A
n=30pcs
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:V F(mV)
890
880
5
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
6
Sin(=180)
4
2
0.1
0.001
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
2
4
6
8
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2011.05 - Rev.C
10
DC
10
VR
t
T
D=t/T
VR=100V
Tj=150C
D=1/2
5
Sin(=180)
0
0A
Io
0V
VR
t
DC
10
T
D=t/T
VR=100V
Tj=150C
D=1/2
5
Sin(=180)
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
150
No break at 30kV
20
15
10
5
0
0
0
No break at 30kV
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0V
30
15
Io
0A
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
15
Data Sheet
RF601T2D
0
25
50
75
100
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
3/3
125
150
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
2011.05 - Rev.C
Notice
Notes
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R1120A