DIODES DT455N

DT455N
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
High Cell Density DMOS Technology
Low On-State Resistance
High Power and Current Capability
Fast Switching Speed
High Transient Tolerance
SOT-223
A
B
D
C D
D
G
E
S
P
G
R
H
J
K
L
M
S
N
Mechanical Data
·
·
SOT-223 Plastic Case
Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
Maximum Ratings
Dim
Min
Max
A
6.30
6.71
B
2.90
3.10
C
6.71
7.29
D
3.30
3.71
2.35
E
2.22
G
0.92
1.00
H
1.10
1.30
J
1.55
1.80
K
0.025
0.102
L
0.66
0.79
M
4.55
4.70
N
—
10°
P
10°
16°
R
0.254
0.356
S
10°
16°
All Dimensions in mm
25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
20
V
Note 1a Continuous
Pulsed
ID
±11.5
±40
A
Note 1a
Note 1b
Note 1c
Pd
3.0
1.3
1.1
W
Tj, TSTG
-65 to +150
°C
Symbol
Value
Unit
RQJA
42
°C/W
RQJC
12
°C/W
Drain Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Notes:
Note 1
1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design.
2
1a. With 1 in oz 2 oz. copper mounting pad RQJA = 42°C/W.
2
1b. With 0.0066 in oz 2 oz. copper mounting pad RQJA = 95°C/W.
2
1c. With 0.0123 in oz 2 oz. copper mounting pad RQJA = 110°C/W.
DS11609 Rev. C-4
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DT455N
Electrical Characteristics 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
BVDSS
30
—
—
V
VGS = 0V, ID = 250µA
IDSS
—
—
1.0
10
µA
VDS = 24V, VGS = 0V
Gate-Body Leakage, Forward
IGSSF
—
—
100
nA
VGS = 20V, VDS = 0V
Gate-Body Leakage, Reverse
IGSSR
—
—
-100
nA
VGS = -20V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Tj = 125°C
VGS(th)
1.0
0.7
1.5
0.9
3.0
2.2
V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance
Tj = 125°C
RDS (ON)
—
0.013
0.019
0.018
0.015
0.03
0.02
W
VGS = 10V, ID = 11.5A
VGS = 10V, ID = 11.5A
VGS = 4.5V, ID = 10A
ID(ON)
30
15
—
—
A
VGS = 10V, VDS = 5.0V
VGS = 4.5V, VDS = 5.0V
gFS
—
26
—
m
VDS = 10V, ID = 11.5A
Input Capacitance
CISS
—
1220
—
pF
Output Capacitance
COSS
—
715
—
pF
Reverse Transfer Capacitance
CRSS
—
280
—
pF
SWITCHING CHARACTERISTICS (Note 2)
tD(ON)
Turn-On Delay Time
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Tj =55°C
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
VDS = 15V, VGS = 0V
f = 1.0MHz
—
11
20
ns
Turn-On Rise Time
tr
—
16
30
ns
Turn-Off Delay Time
tD(OFF)
—
48
80
ns
Turn-Off Fall Time
tf
—
40
70
ns
Total Gate Charge
Qg
—
46
61
nC
Gate-Source Charge
Qgs
—
4.0
—
nC
—
nC
2.5
A
1.2
V
VGS = 0V, IS = 2.5A (Note 2)
140
ns
VGS = 0V, IF = 2.5A
dlp/dt = 100 A/µs
Qgd
—
11
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
IS
—
—
Forward Current
VSD
Drain-Source Diode Forward Voltage
—
0.845
Gate-Drain Charge
Reverse Recovery Time
Notes:
trr
—
—
VDD = 15V, ID = 1.0A
VGEN = 10V, RGEN = 6.0W
VDS = 10V. ID = 11.5A.
VGS = 10V
2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
DS11609 Rev. C-4
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DT455N
VGS = 10V
4.5
ID, DRAIN-SOURCE CURRENT (A)
6.0
4.0
5.0
32
3.5
24
16
3.0
8
0
0
0.5
1.0
1.5
2.0
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
3.0
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
40
VGS = 3.5V
2.0
4.0
4.5
1.5
5.0
6.0
10
1.0
0.5
0
8
16
24
32
40
ID, DRAIN CURRENT (A)
Fig. 2, On-Resistance vs Gate Voltage and Drain Current
Fig. 1, On-Region Characteristics
1.5
40
I D = 11.5A
VGB = 10V
TJ = -55 C
VDS = 10V
1.25
ID, DRAIN CURRENT (A)
R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2.5
1.0
0.75
0.5
125 C
25 C
30
20
10
0
-50
-25
0
25
50
75
100
125
150
0.8
1.6
2.4
3.2
4
T j , JUNCTION TEMPERATURE (°C)
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 3, On-Resistance vs Temperature
Fig. 4, Transfer Characteristics
DS11609 Rev. C-4
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DT455N
30
ID, DRAIN CURRENT (A)
10
IT
)
ON
LIM
10
0
(
DS
R
s
1m
s
10
ms
10
0m
1s
10
s
1
s
dc
0.1
VGS = 10V
SINGLE PULSE
RQJA = 42 C
TA = 25 C
0.01
0.1
1
10
50
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 5, Maximum Safe Operating Area
1.0
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
0.1
0.1
RQJA (t) = r(t) b RQJA
RQJA = See Note 1c
0.05
0.02
P(pk)
0.01
0.01
Single Pulse
t1
t2
TJ - TA = PPK b RQJA(t)
Duty Cycle, D = t1/t2
0.001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
3000
t1, SQUARE WAVE PULSE DURATION (seconds)
Fig. 6, Typical Normalized Transient Thermal Impedance Curves
DS11609 Rev. C-4
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DT455N