DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSH10 NPN 1 GHz general purpose switching transistor Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1998 Aug 27 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor FEATURES PINNING • Low cost PIN • High power gain. DESCRIPTION MPSH10 DESCRIPTION 1 collector 2 emitter 3 base page 1 2 3 MSB033 Silicon NPN general purpose transistor in a SOT54 (TO-92) package. PNP complement is the MPSH81. Marking code: PSH10. Fig.1 SOT54. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 30 V VCEO collector-emitter voltage open base − 25 V VEBO emitter-base voltage open collector − 3 V Ts = 25 °C; note 1 − 1 W − 150 °C 60 − Ptot total power dissipation Tj junction temperature hFE DC current gain VCE = 10 V; IC = 4 mA Cre collector-emitter feedback capacitance VCB = 10 V; IE = 0; f = 1 MHz − 0.7 pF Crb collector-base feedback capacitance VCB = 10 V; IE = 0; f = 1 MHz 0.35 0.65 pF fT transition frequency VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C 650 − MHz rbCc collector-base time constant VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C − 9 ps Note 1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT open emitter − 30 collector-emitter voltage open base − 25 V emitter-base voltage open collector − 3 V − 40 mA VCBO collector-base voltage VCEO VEBO IC collector current (DC) Ptot total power dissipation − 1 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Ts = 25 °C; note 1 Note 1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body. 1998 Aug 27 2 V Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor MPSH10 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-s thermal resistance from junction to soldering point Rth j-a thermal resistance from junction to ambient VALUE note 1 UNIT 125 K/W 250 K/W Note 1. Ts is the temperature at the soldering point of the collector lead, 4 mm from the body. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 100 µA; IE = 0 30 − V V(BR)CEO collector-emitter breakdown voltage open base; IC = 1 mA; IB = 0 25 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 10 µA; IC = 0 3 − V VCEsat collector-emitter saturation voltage IC = 4 mA; IB = 0.4 mA − 0.5 V VBEon base-emitter ON voltage VCE = 10 V; IC = 4 mA − 0.95 V ICBO collector-base cut-off current VCB = 25 V; IE = 0 − 100 nA IEBO emitter-base cut-off current VCB = 25 V; IC = 0 − 100 nA hFE DC current gain VCE = 10 V; IC = 4 mA 60 − Cre collector-emitter feedback capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz − 0.7 pF Crb collector-base feedback capacitance VCB = 10 V; IC = ic = 0; f = 1 MHz 0.35 0.65 pF fT transition frequency VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C 650 − MHz rbCc collector-base time constant VCB = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 °C − 9 ps 1998 Aug 27 3 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor MRA154 100 Y11 MPSH10 MRA156 −10 b11 handbook, halfpage handbook, halfpage (mS) (mS) −20 80 g11 1000 MHz −30 60 −b11 40 −40 20 −50 700 400 0 102 f (MHz) −60 103 20 0 40 200 100 60 80 100 g11 (mS) VCB = 10 V; IC = 4 mA. Fig.2 VCB = 10 V; IC = 4 mA. Common base input admittance (Y11) as a function of frequency. Fig.3 Common base input admittance (Y11). MRA155 70 Y21 (mS) MRA157 60 b21 handbook, halfpage handbook, halfpage 200 400 (mS) b21 600 100 50 50 700 30 40 −g21 10 30 −10 20 −30 102 f (MHz) 1000 MHz 10 −70 103 −50 VCB = 10 V; IC = 4 mA. VCB = 10 V; IC = 4 mA. Fig.4 Fig.5 Common base forward transfer admittance (Y21) as a function of frequency. 1998 Aug 27 4 −30 −10 10 30 g21 (mS) Common base forward transfer admittance (Y21). Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor MRA150 5 MRA152 0 handbook, halfpage handbook, halfpage b12 (mS) Y12 (mS) 4 −1 3 −2 2 MPSH10 100 200 400 700 −3 −b12 1000 MHz −4 1 0 102 g12 f (MHz) −5 −2 103 −1.2 VCB = 10 V; IC = 4 mA. VCB = 10 V; IC = 4 mA. Fig.6 Fig.7 Common base reverse transfer admittance (Y12) as a function of frequency. MRA151 10 1.2 2 g12 (mS) MRA153 10 1000 MHz b22 (mS) Y22 (mS) 0.4 Common base reverse transfer admittance (Y12). handbook, halfpage handbook, halfpage −0.4 8 8 700 MHz 6 6 b22 4 4 2 2 400 MHz 200 MHz g22 0 102 f (MHz) 100 MHz 0 103 0 2 4 6 8 10 g22 (mS) VCB = 10 V; IC = 4 mA. VCB = 10 V; IC = 4 mA. Fig.8 Common base reverse admittance (Y22) as a function of frequency. 1998 Aug 27 Fig.9 Common base reverse admittance (Y22). 5 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor MPSH10 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1998 Aug 27 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor MPSH10 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Aug 27 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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