NTP75N03−06, NTB75N03−06 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK http://onsemi.com This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The Drain−to−Source Diode has a fast response with soft recovery. V(BR)DSS RDS(on) TYP ID MAX 30 A 5.3 m @ 10 V 75 A Features • • • • • • Ultra−Low RDS(on), Single Base, Advanced Technology SPICE Parameters Available Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperatures High Avalanche Energy Capability ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0 Typical Applications • • • • 4 4 2 1 3 1 Power Supplies Inductive Loads PWM Motor Controls Replaces MTP1306 and MTB1306 D2PAK CASE 418AA Style 2 TO−220AB CASE 221A Style 5 2 3 MARKING DIAGRAMS & PIN ASSIGNMENTS N−Channel 4 Drain 4 Drain D G 75 N03−06 YWW 75 N03−06 YWW S 1 Gate 3 Source 2 Drain 1 Gate 75N03−06 Y WW 2 Drain 3 Source = Device Code = Year = Work Week ORDERING INFORMATION Package Shipping† NTP75N03−06 TO−220 50 Units/Rail NTB75N03−06 D2PAK 50 Units/Rail NTB75N03−06T4 D2PAK 800/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 December, 2003 − Rev. 4 1 Publication Order Number: NTP75N03−06/D NTP75N03−06, NTB75N03−06 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 30 Vdc Drain−to−Gate Voltage (RGS = 10 M) VDGB 30 Vdc Gate−to−Source Voltage − Continuous VGS ±20 Vdc Non−repetitive (tp ≤ 10 ms) VGS ±24 Vdc ID ID 75 59 225 Adc PD 125 1.0 2.5 W W/°C W TJ and Tstg −55 to 150 °C EAS 1500 mJ RJC RJA RJA 1.0 62.5 50 °C/W TL 260 °C Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Single Pulse (tp ≤ 10 s) IDM Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting T J = 25°C (VDD = 38 Vdc, VGS = 10 Vdc, L = 1 mH, IL(pk) = 55 A, VDS = 40 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds 1. When surface mounted to an FR4 board using the minimum recommended pad size. http://onsemi.com 2 Apk NTP75N03−06, NTB75N03−06 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ. Max Unit 30 − −57 − − Vdc mV°C − − − − 1.0 10 − − ±100 nAdc 1.0 − 1.6 −6 2.0 − Vdc mV°C − 5.3 6.5 − − 0.53 0.35 0.68 0.50 gFS − 58 − Mhos Ciss − 4398 5635 pF Coss − 1160 1894 Crss − 317 430 td(on) − 16 30 tr − 130 200 td(off) − 65 110 tf − 105 175 QT − 57 75 Q1 − 11 15 Q2 − 34 50 VSD − − 1.19 1.09 1.25 − Vdc trr − 37 − ns ta − 20 − tb − 17 − QRR − 0.023 − OFF CHARACTERISTICS Drain −Source Breakdown Voltage (Note 2) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Negative) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS Adc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (Note 2) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 2) (VGS = 10 Vdc, ID = 37.5 Adc) RDS(on) Static Drain−to−Source On Resistance (Note 2) (VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 37.5 Adc, TJ = 125°C) VDS(on) Forward Transconductance (Notes 2 & 4) (VDS = 3 Vdc, ID = 20 Adc) m Vdc DYNAMIC CHARACTERISTICS (Note 4) Input Capacitance Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 3 and 4) Turn−On Delay Time Rise Time Turn−Off Delay Time (VGS = 5.0 Vdc, VDD = 20 Vdc, Vdc ID = 75 Adc, Adc RG = 4.7 )) ((Note 2)) Fall Time Gate Charge (VGS = 5.0 5 0 Vdc, Vdc ID = 75 Adc, VDS = 24 Vdc) (Note 2) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 75 Adc, VGS = 0 Vdc) (IS = 75 Adc, VGS = 0 Vdc, TJ = 125°C) (Note 2) Reverse Recovery Time (Note 4) Reverse Recovery Stored Charge (Note 4) (IS = 75 Adc, VGS = 0 Vdc dlS/dt = 100 A/s) (Note 2) 2. Pulse Test: Pulse Width 300 S, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. 4. From characterization test data. http://onsemi.com 3 C NTP75N03−06, NTB75N03−06 150 VGS = 4 V VGS = 4.5 V 90 VGS = 5 V VGS = 6 V VGS = 8 V VGS = 10 V 60 VGS = 3 V 30 TJ = 25°C VGS = 2.5 V 0 105 90 75 60 TJ = 25°C 45 30 TJ = 100°C 15 1 1.5 2.5 3 3.5 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VGS = 10 V TJ = 100°C 0.0065 0.0060 TJ = 25°C 0.0055 0.0050 0.0045 TJ = −55°C 0.0040 0.0035 0.0030 10 20 30 40 50 60 70 80 90 100 120 4 0.009 TJ = 25°C 0.008 0.007 VGS = 5 V 0.006 VGS = 10 V 0.005 0.004 0 20 ID, DRAIN CURRENT (AMPS) 40 60 80 100 120 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Drain Current and Temperature Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1000 1.6 VGS = 0 V VGS = 10 V ID = 37.5 A 1.4 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO SOURCE RESISTANCE (NORMALIZED) 2 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.0075 0.0070 120 0 0.5 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 RDS(on), DRAIN−TO SOURCE RESISTANCE () RDS(on), DRAIN−TO SOURCE RESISTANCE () 0 0.2 0.4 0.6 0.8 1 VDS ≥ 10 V 135 VGS = 3.5 V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 120 1.2 1 0.8 0.6 −50 TJ = 125°C 100 TJ = 100°C 10 1 −25 0 25 50 75 100 125 150 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 NTP75N03−06, NTB75N03−06 VGS VDS VDS = 0 V VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 10000 8000 6000 Ciss 4000 Coss 2000 Crss 0 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 22 25 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 12000 30 8 VGS QT Q2 Q1 4 10 2 ID = 75 A TJ = 25°C Q3 0 0 10 20 30 40 50 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) IS, SOURCE CURRENT (AMPS) 1000 tf 100 td(off) td(on) 1 2.2 4.7 6.2 VDD = 15 V VGS = 5 V 9.1 10 20 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0.0 VGS = 0 V TJ = 25°C 0.2 0.4 0.6 0.8 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) tr 10 0 60 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 7. Capacitance Variation TJ = 25°C ID = 75 A 20 VDS 6 1600 ID = 75 A 1400 1200 1000 800 600 400 200 0 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 1.0 NTP75N03−06, NTB75N03−06 PACKAGE DIMENSIONS TO−220 THREE−LEAD TO−220AB CASE 221A−09 ISSUE AA −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 NTP75N03−06, NTB75N03−06 PACKAGE DIMENSIONS D2PAK CASE 418AA−01 ISSUE O C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E V W −B− 4 DIM A B C D E F G J K M S V A 1 2 S 3 −T− SEATING PLANE K W J G D STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3 PL 0.13 (0.005) M T B INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.036 0.045 0.055 0.310 −−− 0.100 BSC 0.018 0.025 0.090 0.110 0.280 −−− 0.575 0.625 0.045 0.055 M SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 6.096 0.24 3.05 0.12 17.02 0.67 SCALE 3:1 Figure 12. D2PAK http://onsemi.com 7 mm inches MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.92 1.14 1.40 7.87 −−− 2.54 BSC 0.46 0.64 2.29 2.79 7.11 −−− 14.60 15.88 1.14 1.40 NTP75N03−06, NTB75N03−06 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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