DIOTEC TIP31B

TIP31, TIP31A ... C
NPN
General Purpose Transistors
Si-Epitaxial PlanarTransistors
NPN
Version 2004-06-29
Collector current – Kollektorstrom
3A
Plastic case
Kunststoffgehäuse
TO-220AB
Weight approx. – Gewicht ca.
2.2 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
1=B
2=C
Standard packaging in tubes
Standard Lieferform in Stangen
3=E
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
TIP31
TIP31A
TIP31B
TIP31C
Collector-Emitter-voltage
B open
VCE0
40 V
60 V
80 V
100 V
Collector-Emitter-voltage
B shorted VCES
40 V
60 V
80 V
100 V
Emitter-Base-voltage
C open
VEB0
5V
Ptot
2 W 1)
TC =25°C Ptot
40 W
Power dissipation – Verlustleistung
without cooling – ohne Kühlung
with cooling – mit Kühlung
Collector current – Kollektorstrom
IC
3 A (dc)
Peak Collector current
Kollektor-Spitzenstrom
ICM
5A
Base current – Basisstrom
IB
1A
Junction temp. – Sperrschichttemp.
Tj
150°C
Storage temp. – Lagerungstemperatur
TS
- 65…+ 150°C
Characteristics, Tj = 25°C
Kennwerte, Tj = 25°C
Min.
Typ.
Max.
VCEsat
–
–
1.2 V
- VBEon
–
–
1.8
25
10
–
–
–
50
Collector saturation volt. – Kollektor-Sättigungsspannung
IC = 3 A, IB = 375 mA
Base-Emitter voltage – Basis-Emitter-Spannung
VCE = 4 V, IC = 3 A
DC current gain – Kollektor-Basis-Stromverhältnis
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 3 A
1
hFE
hFE
) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
26
General Purpose Transistors
TIP31, TIP31A ... C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektorreststrom
VCE = 30 V
TIP31
TIP31A
ICE0
ICE0
–
–
–
–
300 nA
300 nA
VCE = 60 V
TIP31B
TIP31C
ICE0
ICE0
–
–
–
–
300 nA
300 nA
ICES
–
–
200 nA
hfe
20
–
–
fT
3 MHz
–
–
ton
toff
–
–
300 ns
1 µs
–
–
VCE = rated VCE0
h-Parameters at VCE = 10 V, IC = 0.5 A, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
Gain-Bandwidth Product – Transitfrequenz
VCE = 10 V, IC = 0.5 A, f = 1 MHz
Switching times – Schaltzeiten
turn-on time
turn-off time
ICon = 1 A,
IBon = - IBoff = 100 mA
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
junction to case – Sperrschicht zu Gehäuse
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
1
RthA
RthC
62 K/W 1)
3 K/W
M4
9 ± 10% lb.in.
1 ± 10% Nm
TIP32, TIP32A
TIP32B, TIP32C
) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
27