TIP31, TIP31A ... C NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Version 2004-06-29 Collector current – Kollektorstrom 3A Plastic case Kunststoffgehäuse TO-220AB Weight approx. – Gewicht ca. 2.2 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 1=B 2=C Standard packaging in tubes Standard Lieferform in Stangen 3=E Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) TIP31 TIP31A TIP31B TIP31C Collector-Emitter-voltage B open VCE0 40 V 60 V 80 V 100 V Collector-Emitter-voltage B shorted VCES 40 V 60 V 80 V 100 V Emitter-Base-voltage C open VEB0 5V Ptot 2 W 1) TC =25°C Ptot 40 W Power dissipation – Verlustleistung without cooling – ohne Kühlung with cooling – mit Kühlung Collector current – Kollektorstrom IC 3 A (dc) Peak Collector current Kollektor-Spitzenstrom ICM 5A Base current – Basisstrom IB 1A Junction temp. – Sperrschichttemp. Tj 150°C Storage temp. – Lagerungstemperatur TS - 65…+ 150°C Characteristics, Tj = 25°C Kennwerte, Tj = 25°C Min. Typ. Max. VCEsat – – 1.2 V - VBEon – – 1.8 25 10 – – – 50 Collector saturation volt. – Kollektor-Sättigungsspannung IC = 3 A, IB = 375 mA Base-Emitter voltage – Basis-Emitter-Spannung VCE = 4 V, IC = 3 A DC current gain – Kollektor-Basis-Stromverhältnis VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A 1 hFE hFE ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 26 General Purpose Transistors TIP31, TIP31A ... C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Collector-Emitter cutoff current – Kollektorreststrom VCE = 30 V TIP31 TIP31A ICE0 ICE0 – – – – 300 nA 300 nA VCE = 60 V TIP31B TIP31C ICE0 ICE0 – – – – 300 nA 300 nA ICES – – 200 nA hfe 20 – – fT 3 MHz – – ton toff – – 300 ns 1 µs – – VCE = rated VCE0 h-Parameters at VCE = 10 V, IC = 0.5 A, f = 1 kHz Small signal current gain Kleinsignal-Stromverstärkung Gain-Bandwidth Product – Transitfrequenz VCE = 10 V, IC = 0.5 A, f = 1 MHz Switching times – Schaltzeiten turn-on time turn-off time ICon = 1 A, IBon = - IBoff = 100 mA Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft junction to case – Sperrschicht zu Gehäuse Admissible torque for mounting Zulässiges Anzugsdrehmoment Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren 1 RthA RthC 62 K/W 1) 3 K/W M4 9 ± 10% lb.in. 1 ± 10% Nm TIP32, TIP32A TIP32B, TIP32C ) Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Anschlußdrähte in 5 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 27