FDMC3300NZA ® MOSFET tm Monolithic Common Drain N-Channel 2.5V Specified PowerTrench 20V, 8A, 26mΩ Features General Description Max rDS(on) = 26mΩ at VGS = 4.5V, ID = 8.0A This dual N-Channel MOSFET has been designed using Max rDS(on) = 34mΩ at VGS = 2.5V, ID = 7.0A Fairchild Semiconductor's advanced PowerTrench® process to >2000V ESD protection optimize the rDS(on) @ VGS = 2.5V on special MLP lead frame with all the drains on one side of the package. Low Profile - 1mm maximum - in the new package MLP 3.3x3.3 mm RoHS Compliant Application Li-lon Battery Pack 5 4 6 3 7 2 8 1 S2 2 G1 1 D2 6 G2 3 D2 D1 4 D2 5 DD22 S1 D1 D1 7 S1 G1 S2 G2 D1 8 Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous (Note 1a) -Pulsed Rating 20 Units V ±12 V 8 40 PD Power Dissipation (Steady State) TJ, TSTG Operating and Storage Junction Temperature Range (Note 1a) A 2.1 W -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 135 °C/W Package Marking and Ordering Information Device Marking 3300A Device FDMC3300NZA ©2006 Fairchild Semiconductor Corporation FDMC3300NZA Rev.C Package Power 33 1 Reel Size 7” Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET January 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250μA, VGS = 0V 20 BVDSS Drain to Source Breakdown Voltage V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V 1 μA IGSS Gate to Source Leakage Current VGS = ±12V, VDS= 0V ±10 μA 1.5 V mV/°C 12 On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C rDS(on) Drain to Source On Resistance gFS Forward Transconductance 0.6 -3.1 mV/°C VGS = 4.5V, ID = 8.0A 20 26 VGS = 2.5V, ID = 7.0A 25 34 VGS = 4.5V, ID = 8.0A, TJ = 150°C 26 35 VDS = 5V, ID = 8.0A 29 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 10V, VGS = 0V, f = 1MHZ f = 1MHz 610 815 pF 165 220 pF 115 175 pF Ω 1.7 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge at 4.5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 10V, ID = 1.0A VGS = 4.5V, RGEN = 6.0Ω VGS = 0V to 4.5V V = 10V DD ID = 8.0A 8 16 ns 8 16 ns 19 34 ns 9 18 ns 8 12 nC 1 nC 2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.0A (Note 2) 0.7 IF = 8.0A, di/dt = 100A/μs 1.2 V 21 ns 6 nC Notes: 1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB. (b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper. b. 135°C/W when mounted on a minimum pad of 2 oz copper a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDMC3300NZA Rev.C 2 www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 VGS = 4.5V VGS = 4.0V 30 VGS = 2.5V VGS = 3.5V VGS = 3.0V 20 VGS =2.0V 10 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0 0 1 2 3 4 5 2.0 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 1.8 VGS = 2.0V 1.6 VGS = 4.0V 1.4 1.2 1.0 VGS = 4.5V 0.8 0 10 20 ID, DRAIN CURRENT(A) 1.3 40 60 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 1.2 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage ID = 8.0A VGS = 4.5V 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) ID = 4.0A PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 50 40 TJ = 125oC 30 TJ = 25oC 20 150 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 40 40 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS =3.0V VGS = 3.5V VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics VGS = 2.5V PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 30 VDD = 5V 20 TJ = 125oC TJ = 10 25oC TJ = -55oC 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 Figure 5. Transfer Characteristics FDMC3300NZA Rev.C VGS = 0V 10 TJ = 125oC 1 TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ID = 8A VDD = 5V 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 1000 8 VDD = 10V 4 VDD = 15V 2 Ciss Coss 100 Crss f = 1MHz VGS = 0V 50 0.1 0 0 4 8 12 Qg, GATE CHARGE(nC) 16 Figure 7. Gate Charge Characteristics P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) rDS(on) LIMITED 100us 1ms 10ms 1 100ms 1s SINGLE PULSE TJ = MAX RATED 0.1 10s o RθJA = 135 C/W DC TA = 25OC 0.01 0.1 1 10 Figure 8. Capacitance vs Drain to Source Voltage 100 10 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 10 500 VGS=10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK 100 CURRENT AS FOLLOWS: I = I25 150 – T A -----------------------125 10 TA = 25oC SINGLE PULSE o RθJA = 135 C/W 1 0.5 -4 10 -3 10 VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area -2 -1 0 1 10 10 10 10 t, PULSE WIDTH (s) 2 3 10 10 Figure 10. Single Pulse Maximum Power Dissipation 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 1E-3 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W -3 10 -2 Figure 11. FDMC3300NZA Rev.C -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 2 10 3 10 Transient Thermal Response Curve 4 www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET www.fairchildsemi.com 5 FDMC3300NZA Rev.C The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I22 FDMC3300NZA Rev. C 6 www.fairchildsemi.com FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET TRADEMARKS