FAIRCHILD FDMC3300NZA_07

FDMC3300NZA
® MOSFET
tm
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
20V, 8A, 26mΩ
Features
General Description
„ Max rDS(on) = 26mΩ at VGS = 4.5V, ID = 8.0A
This dual N-Channel MOSFET has been designed using
„ Max rDS(on) = 34mΩ at VGS = 2.5V, ID = 7.0A
Fairchild Semiconductor's advanced PowerTrench® process to
„ >2000V ESD protection
optimize the rDS(on) @ VGS = 2.5V on special MLP lead frame
with all the drains on one side of the package.
„ Low Profile - 1mm maximum - in the new package MLP
3.3x3.3 mm
„ RoHS Compliant
Application
„ Li-lon Battery Pack
5
4
6
3
7
2
8
1
S2
2
G1
1
D2 6
G2
3
D2
D1
4
D2 5
DD22
S1
D1
D1 7
S1
G1
S2
G2
D1 8
Power 33
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
(Note 1a)
-Pulsed
Rating
20
Units
V
±12
V
8
40
PD
Power Dissipation (Steady State)
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1a)
A
2.1
W
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
60
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
135
°C/W
Package Marking and Ordering Information
Device Marking
3300A
Device
FDMC3300NZA
©2006 Fairchild Semiconductor Corporation
FDMC3300NZA Rev.C
Package
Power 33
1
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
January 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
ID = 250μA, VGS = 0V
20
BVDSS
Drain to Source Breakdown Voltage
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16V, VGS = 0V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±12V, VDS= 0V
±10
μA
1.5
V
mV/°C
12
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
rDS(on)
Drain to Source On Resistance
gFS
Forward Transconductance
0.6
-3.1
mV/°C
VGS = 4.5V, ID = 8.0A
20
26
VGS = 2.5V, ID = 7.0A
25
34
VGS = 4.5V, ID = 8.0A, TJ = 150°C
26
35
VDS = 5V, ID = 8.0A
29
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 10V, VGS = 0V, f = 1MHZ
f = 1MHz
610
815
pF
165
220
pF
115
175
pF
Ω
1.7
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge at 4.5V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 10V, ID = 1.0A
VGS = 4.5V, RGEN = 6.0Ω
VGS = 0V to 4.5V V = 10V
DD
ID = 8.0A
8
16
ns
8
16
ns
19
34
ns
9
18
ns
8
12
nC
1
nC
2
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 2.0A
(Note 2)
0.7
IF = 8.0A, di/dt = 100A/μs
1.2
V
21
ns
6
nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the
user's board design.
(a)RθJA = 60°C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5’x1.5’x0.062’ thick PCB.
(b)RθJA = 135°C/W when mounted on a minimum pad of 2 oz copper.
b. 135°C/W when mounted on a
minimum pad of 2 oz copper
a. 60°C/W when mounted on
a 1 in2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
FDMC3300NZA Rev.C
2
www.fairchildsemi.com
FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
40
VGS = 4.5V
VGS = 4.0V
30
VGS = 2.5V
VGS = 3.5V
VGS = 3.0V
20
VGS =2.0V
10
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0
0
1
2
3
4
5
2.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
1.8
VGS = 2.0V
1.6
VGS = 4.0V
1.4
1.2
1.0
VGS = 4.5V
0.8
0
10
20
ID, DRAIN CURRENT(A)
1.3
40
60
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
1.2
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
30
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
ID = 8.0A
VGS = 4.5V
1.1
1.0
0.9
0.8
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
ID = 4.0A
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
50
40
TJ = 125oC
30
TJ = 25oC
20
150
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
40
40
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS =3.0V
VGS = 3.5V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
VGS = 2.5V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
30
VDD = 5V
20
TJ = 125oC
TJ =
10
25oC
TJ = -55oC
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
Figure 5. Transfer Characteristics
FDMC3300NZA Rev.C
VGS = 0V
10
TJ = 125oC
1
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
ID = 8A
VDD = 5V
6
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
1000
8
VDD = 10V
4
VDD = 15V
2
Ciss
Coss
100
Crss
f = 1MHz
VGS = 0V
50
0.1
0
0
4
8
12
Qg, GATE CHARGE(nC)
16
Figure 7. Gate Charge Characteristics
P(PK), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
rDS(on) LIMITED
100us
1ms
10ms
1
100ms
1s
SINGLE PULSE
TJ = MAX RATED
0.1
10s
o
RθJA = 135 C/W
DC
TA = 25OC
0.01
0.1
1
10
Figure 8. Capacitance vs Drain
to Source Voltage
100
10
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
60
10
500
VGS=10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
100
CURRENT AS FOLLOWS:
I = I25
150 – T
A
-----------------------125
10
TA = 25oC
SINGLE PULSE
o
RθJA = 135 C/W
1
0.5
-4
10
-3
10
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
-2
-1
0
1
10
10
10
10
t, PULSE WIDTH (s)
2
3
10
10
Figure 10. Single Pulse Maximum
Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
1E-3
-4
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 135 C/W
-3
10
-2
Figure 11.
FDMC3300NZA Rev.C
-1
0
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
2
10
3
10
Transient Thermal Response Curve
4
www.fairchildsemi.com
FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
www.fairchildsemi.com
5
FDMC3300NZA Rev.C
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT®
FAST®
FASTr™
FPS™
FRFET™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC®
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDMC3300NZA Rev. C
6
www.fairchildsemi.com
FDMC3300NZA Monolithic Common Drain N-Channel 2.5V Specified PowerTrench® MOSFET
TRADEMARKS