FREESCALE MW6S010MR1

Freescale Semiconductor
Technical Data
Document Number: MW6S010
Rev. 1, 5/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
• Typical Two - Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ =
125 mA, Pout = 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — - 37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MW6S010NR1
MW6S010GNR1
MW6S010MR1
MW6S010GMR1
450 - 1500 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
MW6S010NR1(MR1)
CASE 1265A - 02, STYLE 1
TO - 270 - 2 GULL
PLASTIC
MW6S010GNR1(GMR1)
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
61.4
0.35
W
W/°C
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1.2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
RθJC
2.85
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A
Machine Model (per EIA/JESD22 - A115)
A
Charge Device Model (per JESD22 - C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
1
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 125 mAdc)
VGS(Q)
—
3.1
—
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 0.3 Adc)
VDS(on)
—
0.27
0.35
Vdc
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
23
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
10
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.32
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP, f = 960 MHz,
Two - Tone Test, 100 kHz Tone Spacing
Power Gain
Gps
17.5
18
20.5
dB
Drain Efficiency
ηD
31
32
—
%
Intermodulation Distortion
IMD
—
- 37
- 33
dBc
Input Return Loss
IRL
—
- 18
- 10
dB
Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP,
420 MHz<Frequency<470 MHz, Two - Tone Test, 100 kHz Tone Spacing
Power Gain
Gps
—
20
—
dB
Drain Efficiency
ηD
—
33
—
%
Intermodulation Distortion
IMD
—
- 40
—
dBc
Input Return Loss
IRL
—
- 10
—
dB
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
2
RF Device Data
Freescale Semiconductor
C11
B1
VBIAS
+
+
C2
C3
C4
C6
C12
C7
C10
C15
+
+
+
C16
C18
C19
C13
L1
RF
INPUT
DUT
R1
Z1
Z2
C1
Z1
Z2
Z3
Z4
Z3
VSUPPLY
Z5
Z6
Z7
RF
OUTPUT
Z4
C14
C5
C8
C17
C20
C9
0.073″ x 0.223″ Microstrip
0.112″ x 0.070″ Microstrip
0.213″ x 0.500″ Microstrip
0.313″ x 1.503″ Microstrip
Z5
Z6
Z7
PCB
0.313″ x 0.902″ Microstrip
0.073″ x 1.080″ Microstrip
0.073″ x 0.314″ Microstrip
Rogers ULTRALAM 2000, 0.031″, εr = 2.55
Figure 1. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Schematic — 900 MHz
Table 6. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Designations and Values — 900 MHz
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair - Rite
C1, C6, C11, C20
47 pF Chip Capacitors
100B470JP500X
ATC
C2, C18, C19
22 µF, 35 V Tantalum Capacitors
T491D226K035AS
Kemet
C3, C16
220 µF, 63 V Electrolytic Capacitors, Radial
13668221
Phillips
C4, C15
0.1 µF Chip Capacitors
CDR33BX104AKWS
Kemet
C5, C8, C17
0.8 - 8.0 pF Variable Capacitors, Gigatrim
272915L
Johanson
C7, C12
24 pF Chip Capacitors
100B240JP500X
ATC
C9, C10, C13
6.8 pF Chip Capacitors
100B6R8JP500X
ATC
C14
7.5 pF Chip Capacitor
100B7R5JP500X
ATC
L1
12.5 nH Inductor
A04T - 5
Coilcraft
R1
1 kΩ Chip Resistor
CRCW12061001F100
Vishay - Dale
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
3
C18
C3
C7
C4
C16
C15
C10
C2
B1
C6
C11
C19
C13
C12
L1
R1
C20
C9
C1
C17
C5
C8
C14
MW6S010N
Figure 2. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Layout — 900 MHz
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
4
RF Device Data
Freescale Semiconductor
−8
48
ηD
−10
44
−12
40
IRL
−14
36
32
−16
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 125 mA, 100 kHz Tone Spacing
−18
28
−20
24
IMD
−22
20
Gps
−24
16
910
920
930
940
950
−26
970
960
IMD, INTERMODULATION DISTORTION (dBc)
IRL, INPUT RETURN LOSS (dB)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS — 900 MHz
f, FREQUENCY (MHz)
20
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Two - Tone Wideband Performance
@ Pout = 10 Watts
IDQ = 190 mA
Gps, POWER GAIN (dB)
19
125 mA
18
90 mA
17
VDD = 28 Vdc, f = 945 MHz
Two −Tone Measurements
100 kHz Tone Spacing
16
15
1
10
−40
7th Order
−50
−60
−70
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Intermodulation Distortion Products
versus Output Power
48
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 125 mA, Two −Tone Measurements
Center Frequency = 945 MHz
Ideal
−30
3rd Order
−35
−40
5th Order
−50
−55
0.1
5th Order
−30
0.1
−25
−45
3rd Order
Pout, OUTPUT POWER (WATTS) AVG.
−15
−20
VDD = 28 Vdc, IDQ = 125 mA
f = 945 MHz, Two −Tone Measurements
100 kHz Tone Spacing
−20
100
Pout, OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
0.1
−10
P3dB = 43.14 dBm (20.61 W)
46
P1dB = 42.23 dBm (16.71 W)
44
Actual
42
VDD = 28 Vdc, IDQ = 125 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 945 MHz
40
7th Order
38
1
10
100
19
21
23
25
27
29
TWO −TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
5
50
−10
VDD = 28 Vdc
IDQ = 125 mA
f = 945 MHz
40
−20
30
−30
Gps
20
−40
ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS — 900 MHz
ηD
10
−50
ACPR
0
−60
0.1
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single - Carrier CDMA ACPR, Power
Gain and Power Added Efficiency
versus Output Power
20
50
−30_C
Gps, POWER GAIN (dB)
Gps
85_C
ηD
25_C
18
40
30
85_C
17
20
16
VDD = 28 Vdc 10
IDQ = 125 mA
f = 945 MHz
0
100
15
0.1
1
10
ηD, DRAIN EFFICIENCY (%)
TC = −30_C
19
25_C
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added
Efficiency versus Output Power
24
19
5
20
0
S21
17
16
−5
12
−10
8
−15
16
16 V
VDD = 12 V
15
0
2
20 V
4
6
28 V
24 V
8
10
12
32 V
14
4
16
0
500
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
S11 (dB)
18
S21 (dB)
Gps, POWER GAIN (dB)
IDQ = 125 mA
f = 945 MHz
S11
VDD = 28 Vdc
Pout = 10 W CW
IDQ = 125 mA
−20
−25
600
700
800
900
1000
1100
1200
f, FREQUENCY (MHz)
Figure 11. Broadband Frequency Response
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS x AMPS2)
108
107
106
105
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
7
Zo = 25 Ω
f = 980 MHz
f = 980 MHz
Zsource
Zload
f = 800 MHz
f = 800 MHz
VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP
f
MHz
Zsource
Ω
Zload
Ω
800
3.1 + j1.9
10.1 + j2.3
820
2.8 + j1.7
8.3 + j2.5
840
2.7 + j2.2
8.2 + j3.3
860
3.1 + j3.4
9.8 + j4.8
880
3.3 + j3.8
10.6 + j5.6
900
2.9 + j3.7
9.5 + j5.5
920
2.8 + j4.4
10.1 + j5.9
940
3.0 + j4.7
11.0 + j6.4
960
3.2 + j4.9
11.8 + j6.6
980
3.6 + j5.2
12.1 + j7.1
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 13. Series Equivalent Source and Load Impedance — 900 MHz
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
8
RF Device Data
Freescale Semiconductor
T1
R1
VBIAS
+
C1
R2
B1
B2
R5
C2
R3
VSUPPLY
+
+
C3
C13
C4
C14
C15
T2
R4
R6
L1
DUT
RF
INPUT
Z1
Z2
Z3
Z4
Z6
Z7
Z5
C10
C5
C7
0.540″
0.365″
0.225″
0.440″
x 0.080″
x 0.080″
x 0.080″
x 0.080″
C6
Z1
Z2
Z3
Z4, Z7
C8
RF
OUTPUT
Z8
C9
Microstrip
Microstrip
Microstrip
Microstrip
Z5
Z6
Z8
PCB
C12
C11
0.475″ x 0.330″ Microstrip
0.475″ x 0.325″ Microstrip
1.250″ x 0.080″ Microstrip
Rogers ULTRALAM 2000, 0.030″, εr = 2.55
Figure 14. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Schematic — 450 MHz
Table 7. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Designations and Values — 450 MHz
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Bead
2743019447
Fair - Rite
C1
1 µF, 35 V Tantalum Capacitor
T491C105K050AS
Kemet
C2, C15
22 µF, 35 V Tantalum Capacitors
T491X226K035AS
Kemet
C3, C14
0.1 µF Chip Capacitors
C1210C104K5RACTR
Kemet
C4, C9, C10, C13
330 pF Chip Capacitors
700A331JP150X
ATC
C5
4.3 pF Chip Capacitor
100B4R3JP500X
ATC
C6, C11
0.6 - 8.0 pF Variable Capacitors
27291SL
Johanson
C7, C8, C12
4.7 pF Chip Capacitors
100B4R7JP500X
ATC
L1
39 µH Chip Inductor
ISC - 1210
Vishay - Dale
R1
10 Ω Chip Resistor (0805)
CRCW080510R0F100
Vishay - Dale
R2
1 kΩ Chip Resistor (0805)
CRCW08051001F100
Vishay - Dale
R3
1.2 kΩ Chip Resistor (0805)
CRCW08051201F100
Vishay - Dale
R4
2.2 kΩ Chip Resistor (0805)
CRCW08052201F100
Vishay - Dale
R5
5 kΩ Potentiometer
1224W
Bourns
R6
1 kΩ Chip Resistor (1206)
CRCW12061001F100
Vishay - Dale
T1
5 Volt Regulator, Micro 8
LP2951
On Semiconductor
T2
NPN Transistor
BC847ALT1
On Semiconductor
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
9
R2
R1
R5
C1
T1
B1
R3
T2
R4
C2
C4
B2
C15
C14
C3
C13
C5
C12
C9
C6
C7
R6
L1
C10
C8
C11
MW6S010N 450 MHz
Figure 15. MW6S010NR1(GNR1/MR1/GMR1) Test Circuit Component Layout — 450 MHz
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
10
RF Device Data
Freescale Semiconductor
37
34
Gps
Gps, POWER GAIN (dB)
20
19.8
31
28
ηD
VDD = 28 Vdc, Pout = 3 W (Avg.), IDQ = 150 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
19.6
19.4
19.2
25
−40
−45
19
ACPR
IRL
−50
18.8
18.6
18.4
400
−55
ALT1
−60
410
−65
500
420
430
440
450
460
470
480
490
ACPR (dBc), ALT1 (dBc)
20.2
−6
−9
−12
−15
−18
−21
IRL, INPUT RETURN LOSS (dB)
20.4
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 450 MHz
f, FREQUENCY (MHz)
55
Gps
18.3
45
ηD
40
VDD = 28 Vdc, Pout = 7.5 W (Avg.), IDQ = 150 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
18
17.8
35
−30
17.5
17.3
16.5
400
−40
IRL
17
16.8
−35
ACPR
−45
ALT1
410
−50
420
430
440
450
460
470
480
490
−55
500
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
18.5
50
−4
−6
−8
−10
−12
−14
IRL, INPUT RETURN LOSS (dB)
19
18.8
ηD, DRAIN
EFFICIENCY (%)
Figure 16. 2 - Carrier W - CDMA Broadband Performance @ Pout = 3 Watts Avg.
f, FREQUENCY (MHz)
30
25
0
−10
−5
S11
−20
ACPR
−10
20
15
ALT1
−15
ALT2
10
5
VDD = 28 Vdc
Pout = 10 W
IDQ = 150 mA
−30
−40
S11
S21
S21
VDD = 28 Vdc, IDQ = 150 mA,
f = 450 MHz, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
−50
−60
−20
−70
−25
50 100 150 200 250 300 350 400 450 500 550 600 650
−80
0.1
1
10
f, FREQUENCY (MHz)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. Broadband Frequency Response
Figure 19. Single - Carrier N - CDMA ACPR, ALT1
and ALT2 versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1 & ALT2, CHANNEL POWER (dBc)
Figure 17. 2 - Carrier W - CDMA Broadband Performance @ Pout = 7.5 Watts Avg.
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
11
Zo = 25 Ω
f = 500 MHz
Zsource
f = 500 MHz
Zload
f = 400 MHz
f = 400 MHz
VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP
f
MHz
Zsource
Ω
Zload
Ω
400
9.0 + j3.8
15.0 + j1.4
420
8.8 + j5.4
14.3 + j3.3
440
9.6 + j6.6
15.0 + j4.7
460
10.6 + j9.5
16.3 + j7.3
480
10.7 + j12.6
16.4 + j11.1
500
11.5 + j13.9
16.9 + j12.7
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 20. Series Equivalent Source and Load Impedance — 450 MHz
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
12
RF Device Data
Freescale Semiconductor
NOTES
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
E1
B
2X
D3
2X
E4
aaa
D
aaa
M
M
D A
2X
D1
b1
D A
PIN ONE ID
E
A
E5
E3
PIN 2
D2
PIN 3
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
EXPOSED
HEATSINK AREA
PIN 1
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
aaa
BOTTOM VIEW
F
c1 H
DATUM
PLANE
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
ZONE J
A
A1
INCHES
MIN
MAX
.078
.082
.039
.043
.040
.042
.416
.424
.378
.382
.290
.320
.016
.024
.436
.444
.238
.242
.066
.074
.150
.180
.058
.066
.231
.235
.025 BSC
.193
.199
.007
.011
.004
MILLIMETERS
MIN
MAX
1.98
2.08
0.99
1.09
1.02
1.07
10.57
10.77
9.60
9.70
7.37
8.13
0.41
0.61
11.07
11.28
6.04
6.15
1.68
1.88
3.81
4.57
1.47
1.68
5.87
5.97
0.64 BSC
4.90
5.06
0.18
0.28
0.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
2X
A2
NOTE 7
E2
E5
D
CASE 1265 - 08
ISSUE G
TO - 270- 2
PLASTIC
MW6S010NR1(MR1)
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
14
RF Device Data
Freescale Semiconductor
B
E1
2X
D3
2X
E4
aaa
D
aaa
M
PIN ONE ID
L1
C A
M
e
2X
E
bbb
M
A
C B
A
A2
2X
c1
E2
E5
D
SEATING
PLANE
E5
E3
PIN 2
D2
PIN 3
A1
DETAIL Y
DETAIL Y
H
L
D1
b1
C A
GAGE
PLANE
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
EXPOSED
HEATSINK AREA
PIN 1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
L
L1
b1
c1
e
aaa
INCHES
MIN
MAX
.078
.082
.001
.004
.077
.088
.416
.424
.378
.382
.290
.320
.016
.024
.316
.324
.238
.242
.066
.074
.150
.180
.058
.066
.231
.235
.018
.024
.01 BSC
.193
.199
.007
.011
2°
8°
.004
MILLIMETERS
MIN
MAX
1.98
2.08
0.02
0.10
1.96
2.24
10.57
10.77
9.60
9.70
7.37
8.13
0.41
0.61
8.03
8.23
6.04
6.15
1.68
1.88
3.81
4.57
1.47
1.68
5.87
5.97
4.90
5.06
0.25 BSC
4.90
5.06
0.18
0.28
2°
8°
0.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
BOTTOM VIEW
CASE 1265A - 02
ISSUE A
TO - 270- 2 GULL
PLASTIC
MW6S010GNR1(GMR1)
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
RF Device Data
Freescale Semiconductor
15
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MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
Document Number: MW6S010
Rev. 1, 5/2005
16
RF Device Data
Freescale Semiconductor