HITACHI 2SC1213AK

2SC1213A(K)
Silicon NPN Epitaxial
Application
• Low frequency amplifier
• Medium speed switching
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC1213A (K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
4
V
Collector current
IC
500
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
50
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
50
—
—
V
I C = 1.0 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
4
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
0.5
µA
VCB = 20 V, IE = 0
60
—
320
VCE = 3 V, IC = 10 mA
10
—
—
VCE = 3 V, IC = 500 mA*2
0.64
—
V
VCE = 3 V, IC = 10 mA
DC current transfer ratio
hFE*
1
hFE
Base to emitter voltage
VBE
Collector to emitter saturation
voltage
VCE(sat)
—
0.12
0.6
V
I C = 150 mA, IB = 15 mA*2
Base to emitter satruation
voltage
VBE(sat)
—
0.83
1.2
V
I C = 150 mA, IB = 15 mA*2
Collector output capacitance
Cob
—
7.0
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT
—
120
—
MHz
VCE = 3 V, IC = 10 mA
Turn on time
t on
—
0.25
—
µS
VCC = 10.3 V
I C = 10 IB1 = –10 IB2 = 10 mA
Turn off time
t off
—
0.85
—
µS
Storage time
t stg
—
0.4
—
µS
Notes: 1. The 2SC1213A(K) is grouped by h FE as follows.
2. Pulse test
B
C
D
60 to 120
100 to 200
160 to 320
2
VCC = 5 V
I C = IB1 = –IB2 = 20 mA
2SC1213A (K)
Switching Time Test Circuit
ton, toff Test Circuit
6k
50
P.G.
–6 V
tr, tf ≤ 15 ns
PW ≥ 5 µs
duty ratio ≤ 10%
Switching Time Test Circuit
tstg Test Circuit
CRT
D.U.T.
D.U.T.
1k
6k
0.002
0.002
– +
50
– +
50
200 100
P.G.
tr ≤ 5 ns
PW ≥ 5 µs
duty ratio ≤ 2%
10.3 V
Unit R : Ω
C : µF
Response Waveform
13 V
Input
0
Output
0
0.002
7V
+ –
50
240
0.002
– +
50
5V
Unit R : Ω
C:F
Response Waveform
0
Input
9V
90%
10%
td 90%
10%
ton
90%
10%
Output
0
10%
tstg
toff
500
Maximum Collector Dissipation Curve
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
CRT
1.0 215
500
400
300
200
100
400
300
200
Typical Output Characteristics (1)
40 30
20
10
8
6
5
4
3
2
1 mA
100
PC =
400
mW
IB = 0
0
50
100
150
Ambient Temperature Ta (°C)
0
3
4
5
1
2
Collector to Emitter Voltage VCE (V)
3
2SC1213A (K)
Typical Output Characteristics (2)
Typical Transfer Characteristics
100
30
60
0.6
0.5
0.4
40
0.3
0.2
0.1 mA
IB = 0
20
0
PC = 400
mW
10
3
25
–25
0.7
Ta = 75°C
80
VCE = 3 V
0.8
Collector Current IC (mA)
Collector Current IC (mA)
0.9
1.0
0.3
30
40
50
10
20
Collector to Emitter Voltage VCE (V)
0
0.2 0.4 0.6 0.8 1.0 1.2
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
Collector Cutoff Current vs.
Collector to Base Voltage
30
10
3
1.0
75
50
Ta = 25°C
0.3
0.1
0.03
4
100
30
40
50
0
10
20
Collector to Base Voltage VCB (V)
DC Current Transfer Ratio hFE
Collector Current ICBO (nA)
100
140
VCE = 3 V
120
100
75
50
80
25
0
25°
–
a=
C
T
60
40
20
0
2
5
50 100 200
10 20
Collector Current IC (mA)
500
Collector to Emitter Saturation
Voltage vs. Collector Current
0.32
0.28
IC = 10 IB
0.24
0.20
0.16
0.12
0.08
0.04
0
10 30 100 300 1,000
0.1 0.3 1.0 3
Collector Current IC (mA)
Base to Emitter Saturation Voltage VBE(sat) (V)
Collector to Emitter Saturation Voltage VCE(sat) (V)
2SC1213A (K)
Base to Emitter Saturation Voltage vs.
Collector Current
1.1
IC = 10 IB
Pulse
1.0
0.9
0.8
–25
0
25
50 °C
5
=7
a
T
0.7
0.6
0.5
0.4
0.1 0.2
Gain Bandwidth Product vs.
Collector Current
280
f = 1 MHz
60
Gain Bandwidth Product fT (MHz)
Collector Output Capacitance Cob (pF)
Emitter input Capacitance Cib (pF)
Input And Output Capacitance vs. Voltage
70
50
Cib(IC = 0)
40
30
20
10
0
0.1
Cob(IE = 0)
0.3
1.0
3
10
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
0.5 1.0 2
5 10 20 50 100 200 500
Collector Current IC (mA)
30
VCE = 3 V
240
200
160
120
80
40
0
2
5
50 100 200
10 20
Collector Current IC (mA)
500
5
2SC1213A (K)
Switching Time vs. Collector Current
1,000
toff
Switching Time t (ns)
500
tstg
200
100
50
ton
20
VCC = 10.3 V
IC = 10 IB1 = –10 IB2
td
10
5
6
50 100 200
10 20
Collector Current IC (mA)
500
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
: http:semiconductor.hitachi.com/
Europe
: http://www.hitachi-eu.com/hel/ecg
Asia (Singapore)
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan)
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.